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BSM100GAL120DN2

Eupec & Kg

BSM100GAL120DN2 by Eupec & Kg

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 800 W; Maximum Collector Current (IC): 100 A; Maximum Gate-Emitter Voltage: 20 V;

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

< 1k

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Digiode

USA . 418 parts In-Stock

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Vyrian

USA . 319 parts In-Stock

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319

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ACDS - Activité Composants Distribution Service

France . 80 parts In-Stock

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80

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Tech-Mark Corp

USA . 1 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 827 parts In-Stock

1+ parts

$0.046

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$0.044

827

$0.046

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$0.044

Modulus Dynamics

Lithuania . 16,804 parts In-Stock

1+ parts

$1.583

100+ parts

$1.520

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$1.456

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16,804

$1.583

$1.520

$1.456

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Component Stockers USA

USA . 4,610 parts In-Stock

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$40.610

100+ parts

$38.570

1k+ parts

$37.350

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4,610

$40.610

$38.570

$37.350

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Andel Nordic

Denmark . 751 parts In-Stock

1+ parts

$57.550

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$40.283

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$40.283

751

$57.550

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$40.283

$40.283

Northwest PG Solutions

USA . 1,016 parts In-Stock

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1,016

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Corphita

USA . 647 parts In-Stock

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647

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) BSM100GAL120DN2 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Eupec & Kg

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X7

No. of Elements:

1

No. of Terminals:

7

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

470 ns

Nominal Turn On Time (ton):

210 ns

Maximum VCEsat:

3.2 V

Trade Compliance

BSM100GAL120DN2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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