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ZX5T851GQTC

Diodes Incorporated

ZX5T851GQTC by Diodes Incorporated

ZX5T851GQTC by Diodes Inc. is a NPN BJT transistor for switching applications. Features include VCEsat of 0.26V, hFE of 20, and IC of 6A. Ideal for small outline packages in automotive and industrial electronics due to AEC-Q101 compliance and high transition frequency of 130MHz.

Median Price

$0.650

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 7,779 parts In-Stock

1+ parts

$0.650

100+ parts

$0.283

1k+ parts

$0.172

10k+ parts

$0.137

7,779

$0.650

$0.283

$0.172

$0.137

DigiKey

USA . 1,924 parts In-Stock

1+ parts

$0.710

100+ parts

$0.284

1k+ parts

$0.194

10k+ parts

$0.147

1,924

$0.710

$0.284

$0.194

$0.147

Verical

USA . 232,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.125

232,000

-

-

-

$0.125

Overview

Looking to power up your electronics? Look no further than the ZX5T851GQTC by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated brings you top-notch quality and reliability. This power Bipolar Junction Transistor (BJT) is perfect for switching applications, offering a maximum collector-emitter voltage of 60V and a maximum collector current of 6A. With a small outline package style and Gull Wing terminals, this NPN transistor provides high performance in a compact design. Say goodbye to power woes and hello to seamless operation with the ZX5T851GQTC from Diodes Incorporated.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring a long lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering reliability and performance.

Configuration: SINGLE

SINGLE configuration simplifies circuit design and assembly, making it easier to integrate into systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient signal control and power management.

Surface Mount: YES

Surface mount compatibility allows for easy installation on PCBs, saving space and simplifying manufacturing processes.

Maximum VCEsat: 0.26 V

Low VCEsat minimizes power loss and improves efficiency in switching operations.

Package Shape: RECTANGULAR

Rectangular shape facilitates easy placement and mounting on PCBs, optimizing circuit layout.

Terminal Form: GULL WING

Gull wing terminals provide secure connections and easy soldering, enhancing the reliability of the transistor.

No. of Terminals: 4

4 terminals offer flexibility in circuit connections and compatibility with different types of circuits.

Maximum Power Dissipation (Abs): 3 W

High power dissipation capability allows the transistor to handle significant power loads without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and enables compact designs in electronic systems.

Minimum DC Current Gain (hFE): 20

Higher DC current gain ensures reliable amplification and signal processing in various applications.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows the transistor to perform reliably in various environmental conditions.

Maximum Collector-Base Capacitance: 31 pF

Low capacitance minimizes signal distortion and improves high-frequency performance in switching applications.

Maximum Collector-Emitter Voltage: 60 V

High collector-emitter voltage rating enables the transistor to handle high voltage signals safely and efficiently.

Transistor Element Material: SILICON

Silicon material offers high performance, stability, and reliability for the transistor's semiconductor element.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows the transistor to function in cold environments without performance degradation.

Maximum Collector Current (IC): 6 A

High collector current rating allows for handling heavy load currents in various switching applications.

Terminal Finish: MATTE TIN

Matte tin finish provides excellent solderability and corrosion resistance, ensuring reliable terminal connections.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit connections and compatibility with different PCB layouts.

Case Connection: COLLECTOR

Collector case connection simplifies the circuit design and improves thermal management for the transistor.

Peak Reflow Temperature °C: 260

High peak reflow temperature enables efficient soldering during manufacturing processes without damaging the transistor.

Reference Standard: AEC-Q101; IATF 16949; MIL-STD-202

Compliance with industry standards ensures quality, reliability, and performance of the transistor in various applications.

Nominal Transition Frequency (fT): 130 MHz

High nominal transition frequency enables fast switching and signal processing, making it suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ZX5T851GQTC attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

6 A

Maximum Collector-Base Capacitance:

31 pF

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

20

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

3 W

Reference Standard:

AEC-Q101; IATF 16949; MIL-STD-202

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.26 V

Trade Compliance

ZX5T851GQTC Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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