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ZX5T849GTA

Diodes Incorporated

ZX5T849GTA by Diodes Incorporated

ZX5T849GTA by Diodes Inc. is a NPN BJT transistor with 30V VCE, 7A IC, and 140MHz fT. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mount assembly.

Median Price

$0.727

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 994 parts In-Stock

1+ parts

$1.900

100+ parts

$0.856

1k+ parts

$0.500

10k+ parts

-

994

$1.900

$0.856

$0.500

-

Element14

Singapore . 318 parts In-Stock

1+ parts

$2.410

100+ parts

$1.020

1k+ parts

$0.744

10k+ parts

-

318

$2.410

$1.020

$0.744

-

Arrow

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.447

10k+ parts

$0.395

1,000

-

-

$0.447

$0.395

Verical

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.448

10k+ parts

-

1,000

-

-

$0.448

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Farnell

UK . 298 parts In-Stock

1+ parts

-

100+ parts

$0.727

1k+ parts

$0.425

10k+ parts

$0.417

298

-

$0.727

$0.425

$0.417

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 600 parts In-Stock

1+ parts

$0.415

100+ parts

-

1k+ parts

-

10k+ parts

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600

$0.415

-

-

-

Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 5,591 parts In-Stock

1+ parts

-

100+ parts

-

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5,591

-

-

-

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Vyrian

USA . 2,695 parts In-Stock

1+ parts

-

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2,695

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-

-

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Bristol Electronics

USA . 822 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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822

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Euro-Tech

UK . 635 parts In-Stock

1+ parts

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100+ parts

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635

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 2,059 parts In-Stock

1+ parts

$0.340

100+ parts

-

1k+ parts

-

10k+ parts

-

2,059

$0.340

-

-

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$0.407

100+ parts

-

1k+ parts

$0.390

10k+ parts

-

2,000

$0.407

-

$0.390

-

Continental Prestige Electronics

USA . 6,203 parts In-Stock

1+ parts

$0.415

100+ parts

-

1k+ parts

-

10k+ parts

$0.407

6,203

$0.415

-

-

$0.407

Argo Parts USA

USA . 5,329 parts In-Stock

1+ parts

$0.415

100+ parts

-

1k+ parts

-

10k+ parts

$0.403

5,329

$0.415

-

-

$0.403

Lixinc

USA . 19,854 parts In-Stock

1+ parts

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19,854

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QUARKTWIN TECHNOLOGY LTD

USA . 16,302 parts In-Stock

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16,302

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Perfect Parts

USA . 7,109 parts In-Stock

1+ parts

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7,109

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Authorized Procurement Solutions

USA . 1,500 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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1,500

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Overview

Unleash the power of innovation with the ZX5T849GTA by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers top-notch quality and reliability. This Power Bipolar Junction Transistor (BJT) is perfect for switching applications, offering unparalleled performance and efficiency. With its NPN polarity, small outline package style, and high collector current, this transistor is a game-changer in the world of electronics. Trust Diodes Incorporated to provide you with the best-in-class components for all your power needs. Elevate your projects with the ZX5T849GTA today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides a good balance of durability and light weight, making the product easy to handle and resistant to damage.

Polarity or Channel Type: NPN

NPN transistors are commonly used in electronic circuits and offer high efficiency and fast switching speeds.

Configuration: SINGLE

Single configuration transistors are easy to work with and suitable for many applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in controlling electrical circuits.

Surface Mount: YES

Surface mount technology allows for easy and secure mounting on circuit boards, saving space and simplifying assembly.

Package Shape: RECTANGULAR

Rectangular shape fits well with standard PCB designs, making integration into circuits straightforward.

Terminal Form: GULL WING

Gull wing terminals are suitable for surface mounting and provide good stability and reliability.

No. of Terminals: 4

Having 4 terminals allows for versatile connections and adds flexibility in circuit design.

Package Style (Meter): SMALL OUTLINE

Small outline package style is space-saving and compatible with modern electronic devices.

Minimum DC Current Gain (hFE): 20

Higher minimum DC current gain ensures consistent amplification of signal in various applications.

Maximum Collector-Emitter Voltage: 30 V

High maximum collector-emitter voltage rating provides protection against voltage spikes and ensures device reliability.

Transistor Element Material: SILICON

Silicon is a widely used material in semiconductor industry, offering good performance and reliability in transistors.

Maximum Collector Current (IC): 7 A

High maximum collector current allows for handling of larger currents, making it suitable for power applications.

Terminal Finish: MATTE TIN

Matte tin finish provides good conductivity and corrosion resistance, ensuring long-term performance.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit connections and allows for versatile use in various setups.

Case Connection: COLLECTOR

Case connection to collector allows for efficient heat dissipation and helps in maintaining optimal operating temperature.

Maximum Time At Peak Reflow Temperature (s): 30

Short maximum time at peak reflow temperature minimizes the risk of component damage during soldering.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures proper soldering and reliable mechanical connection in assembly process.

Nominal Transition Frequency (fT): 140 MHz

High nominal transition frequency indicates fast response and high-frequency operation capabilities, suitable for various applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ZX5T849GTA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

7 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

20

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZX5T849GTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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