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ZX5T1951GTA

Diodes Incorporated

ZX5T1951GTA by Diodes Incorporated

ZX5T1951GTA by Diodes Inc. is a PNP BJT transistor with 60V VCEO, 6A IC, and 3W power dissipation. Ideal for switching applications, it has a hFE of 5, operates up to 150°C, and features a small outline package with Gull Wing terminals for surface mounting.

Median Price

$0.344

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 2,490 parts In-Stock

1+ parts

$0.550

100+ parts

$0.314

1k+ parts

$0.221

10k+ parts

-

2,490

$0.550

$0.314

$0.221

-

Mouser Electronics

USA . 102 parts In-Stock

1+ parts

$0.700

100+ parts

$0.362

1k+ parts

$0.245

10k+ parts

$0.178

102

$0.700

$0.362

$0.245

$0.178

DigiKey

USA . 1,267 parts In-Stock

1+ parts

$0.900

100+ parts

$0.362

1k+ parts

$0.250

10k+ parts

$0.188

1,267

$0.900

$0.362

$0.250

$0.188

Arrow

USA . 1,556,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.137

1,556,000

-

-

-

$0.137

Verical

USA . 1,556,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.137

1,556,000

-

-

-

$0.137

Future Electronics

Canada . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.145

10k+ parts

$0.140

4,000

-

-

$0.145

$0.140

Farnell

UK . 2,490 parts In-Stock

1+ parts

-

100+ parts

$0.297

1k+ parts

$0.201

10k+ parts

$0.146

2,490

-

$0.297

$0.201

$0.146

Element14

Singapore . 1,500 parts In-Stock

1+ parts

-

100+ parts

$0.391

1k+ parts

$0.213

10k+ parts

$0.211

1,500

-

$0.391

$0.213

$0.211

Avnet

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Maritex

Poland . 40,000 parts In-Stock

1+ parts

$0.377

100+ parts

$0.198

1k+ parts

$0.172

10k+ parts

-

40,000

$0.377

$0.198

$0.172

-

Ozdisan Elektronik

Türkiye . 4,041 parts In-Stock

1+ parts

$56.010

100+ parts

-

1k+ parts

-

10k+ parts

-

4,041

$56.010

-

-

-

NAC Semi

USA . 28,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.284

10k+ parts

-

28,000

-

-

$0.284

-

Rutronik

Germany . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.248

10k+ parts

$0.219

3,000

-

-

$0.248

$0.219

ComSIT Distribution GmbH

Germany . 479 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

479

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Lixinc

USA . 8,340 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,340

-

-

-

-

Authorized Procurement Solutions

USA . 7,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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7,000

-

-

-

-

Perfect Parts

USA . 4,715 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,715

-

-

-

-

Eastek

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.221

10k+ parts

-

3,000

-

-

$0.221

-

S.R.D Solutions

India . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,500

-

-

-

-

GreenTree Electronics

Israel . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

-

-

-

-

Kepictronics

USA . 150 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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150

-

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-

-

Overview

Enhance your power systems with the ZX5T1951GTA by Diodes Incorporated, a high-quality Power Bipolar Junction Transistor designed for switching applications. With a maximum collector-emitter voltage of 60V and a maximum collector current of 6A, this PNP transistor offers superior performance and reliability. Its compact rectangular package with gull wing terminals makes it easy to integrate into your designs. Trust Diodes Incorporated, a reputable manufacturer known for delivering top-notch semiconductor solutions. Upgrade your electronics with the ZX5T1951GTA and experience enhanced efficiency and functionality in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the transistor lightweight and cost-effective.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration into existing circuit designs that require PNP transistors.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity.

Transistor Application: SWITCHING

The switching application makes this transistor suitable for controlling high-power devices with efficiency.

Surface Mount: YES

The surface mount capability allows for easy and secure mounting onto circuit boards.

Package Shape: RECTANGULAR

The rectangular package shape provides easy handling and placement during assembly.

Terminal Form: GULL WING

The gull wing terminal form simplifies the soldering process and ensures reliable electrical connections.

Maximum Power Dissipation (Abs): 3 W

The high maximum power dissipation rating of 3 W allows the transistor to handle high power loads without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board and allows for compact device designs.

Minimum DC Current Gain (hFE): 5

The minimum DC current gain of 5 ensures efficient amplification of the input signal.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures the transistor's reliable performance in various environments.

Maximum Collector-Emitter Voltage: 60 V

The high maximum collector-emitter voltage rating of 60 V allows for safe operation in high voltage applications.

Transistor Element Material: SILICON

The silicon transistor element material offers high reliability and performance compared to other materials.

Maximum Collector Current (IC): 6 A

The high maximum collector current rating of 6 A allows the transistor to handle large current loads.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and corrosion resistance.

Terminal Position: DUAL

The dual terminal position allows for flexibility in circuit board layout and connections.

Case Connection: COLLECTOR

The case connection at the collector terminal simplifies heat dissipation and improves overall thermal performance.

Maximum Time At Peak Reflow Temperature (s): 30

The short maximum time at peak reflow temperature of 30 seconds ensures the soldering process is efficient and reliable.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C allows for secure solder joints and proper component mounting.

Nominal Transition Frequency (fT): 120 MHz

The high nominal transition frequency of 120 MHz indicates the transistor's fast switching speed, making it suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ZX5T1951GTA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

5

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

3 W

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZX5T1951GTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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