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ZVP4424A

Diodes Incorporated

ZVP4424A by Diodes Incorporated

ZVP4424A by Diodes Inc. is a P-CHANNEL FET with 240V DS Breakdown Voltage, ideal for SWITCHING applications. It features 9 ohm Drain-Source On Resistance, 0.2A Drain Current, and operates in ENHANCEMENT MODE at up to 150°C. The package is CYLINDRICAL with WIRE terminals and METAL-OXIDE SEMICONDUCTOR technology.

Median Price

$0.826

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 337 parts In-Stock

1+ parts

$0.404

100+ parts

$0.404

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$0.404

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$0.404

337

$0.404

$0.404

$0.404

$0.404

Farnell

UK . 844 parts In-Stock

1+ parts

$1.180

100+ parts

$0.605

1k+ parts

$0.427

10k+ parts

$0.404

844

$1.180

$0.605

$0.427

$0.404

Element14

Singapore . 3,670 parts In-Stock

1+ parts

$1.800

100+ parts

$1.270

1k+ parts

$0.851

10k+ parts

$0.834

3,670

$1.800

$1.270

$0.851

$0.834

Mouser Electronics

USA . 4,128 parts In-Stock

1+ parts

$2.030

100+ parts

$0.870

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-

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4,128

$2.030

$0.870

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Arrow

USA . 4,000 parts In-Stock

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$0.473

4,000

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$0.473

Verical

USA . 4,000 parts In-Stock

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$0.473

4,000

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$0.473

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.549

100+ parts

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50

$0.549

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Vyrian

USA . 4,445 parts In-Stock

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4,445

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NAC Semi

USA . 4,000 parts In-Stock

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4,000

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ComSIT Distribution GmbH

Germany . 3,386 parts In-Stock

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3,386

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Chip Stock

USA . 935 parts In-Stock

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935

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ABC Electronics Ltd.

UK . 131 parts In-Stock

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131

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Pegasus Components GmbH

Germany . 50 parts In-Stock

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50

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Sinequanon

UK . 20 parts In-Stock

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20

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NexGen Digital

USA . 1 parts In-Stock

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 4,798 parts In-Stock

1+ parts

$0.371

100+ parts

$0.362

1k+ parts

$0.360

10k+ parts

-

4,798

$0.371

$0.362

$0.360

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Aranea Global

USA . 100 parts In-Stock

1+ parts

$0.538

100+ parts

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1k+ parts

$0.517

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100

$0.538

-

$0.517

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Continental Prestige Electronics

USA . 1,843 parts In-Stock

1+ parts

$0.549

100+ parts

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$0.538

1,843

$0.549

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-

$0.538

Argo Parts USA

USA . 1,049 parts In-Stock

1+ parts

$0.549

100+ parts

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1k+ parts

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10k+ parts

$0.533

1,049

$0.549

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-

$0.533

Corohmni

South Africa . 782 parts In-Stock

1+ parts

$0.576

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782

$0.576

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Aztec Data Supply Inc.

USA . 3,412 parts In-Stock

1+ parts

$0.791

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3,412

$0.791

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Kepictronics

USA . 50,000 parts In-Stock

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Perfect Parts

USA . 22,525 parts In-Stock

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Authorized Procurement Solutions

USA . 20,000 parts In-Stock

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Lixinc

USA . 17,989 parts In-Stock

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17,989

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Robosynatics

Brazil . 15,668 parts In-Stock

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$0.564

1k+ parts

$0.553

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$0.553

15,668

-

$0.564

$0.553

$0.553

Lucentia Tech

USA . 15,668 parts In-Stock

1+ parts

-

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$0.564

1k+ parts

$0.553

10k+ parts

$0.553

15,668

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$0.564

$0.553

$0.553

Cyclops Electronics Ltd (Excess)

UK . 1,135 parts In-Stock

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1,135

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Computer Components Inc. - USA

USA . 106 parts In-Stock

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106

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ChipstoGo Electronic ltd

UK . 54 parts In-Stock

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54

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Giza Technologies, Inc.

USA . 25 parts In-Stock

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25

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Overview

Enhance your electronic projects with the ZVP4424A by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers top-quality Small Signal Field Effect Transistors that are perfect for switching applications. The ZVP4424A offers a minimum DS breakdown voltage of 240V and a maximum drain-source on resistance of 9 ohms, ensuring reliable performance. With its P-Channel configuration and Matte Tin terminal finish, this transistor is designed for enhancement mode operation. Upgrade your circuits with the value and benefits of the ZVP4424A!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various environments.

Polarity or Channel Type: P-CHANNEL

Offers efficient power management capabilities, ideal for low power applications.

Configuration: SINGLE

Simplifies circuit design and layout, making integration easier in electronic devices.

Transistor Application: SWITCHING

Enables fast switching operations, suitable for applications requiring high efficiency and speed.

Minimum DS Breakdown Voltage: 240 V

Ensures reliable performance and protection against voltage spikes in the circuit.

Package Shape: ROUND

Facilitates easy mounting and soldering, suitable for compact designs.

Terminal Form: WIRE

Allows for easy connection to external components, enhancing ease of use.

Operating Mode: ENHANCEMENT MODE

Provides flexibility in controlling the transistor's behavior, suitable for a wide range of applications.

No. of Terminals: 3

Simplifies circuit connections, reducing complexity and potential errors in the design process.

Package Style (Meter): CYLINDRICAL

Offers a compact and space-saving form factor, ideal for applications with limited space constraints.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Provides reliable and efficient performance, suitable for a wide range of electronic applications.

Maximum Operating Temperature: 150 °C

Allows for operation in high-temperature environments, ensuring stable performance under harsh conditions.

Transistor Element Material: SILICON

Provides excellent conductivity and reliability, ensuring long-term performance of the transistor.

Terminal Finish: MATTE TIN

Facilitates soldering and ensures strong connections with other components in the circuit.

Maximum Drain Current (ID): 0.2 A

Allows for handling of higher current loads, suitable for applications with increased power requirements.

Maximum Drain-Source On Resistance: 9 ohm

Provides low resistance for efficient power transfer and reduced heat generation.

Terminal Position: BOTTOM

Facilitates easy PCB layout and assembly, ensuring proper placement of the transistor in the circuit.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures reliable soldering and connection integrity during assembly processes.

Peak Reflow Temperature °C: 260

Allows for high-temperature soldering for robust and reliable connections.

Maximum Feedback Capacitance (Crss): 15 pF

Offers low feedback capacitance for improved signal integrity and stability in high-frequency applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZVP4424A attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Configuration:

Minimum DS Breakdown Voltage:

240 V

Maximum Drain Current (ID):

.2 A

Maximum Drain-Source On Resistance:

9 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

15 pF

JESD-30 Code:

O-PBCY-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZVP4424A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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