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ZVP4424ASTOA

Diodes Incorporated

ZVP4424ASTOA by Diodes Incorporated

ZVP4424ASTOA by Diodes Inc. is a P-CHANNEL FET with 240V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring a max ID of 0.2A and RDS(on) of 15Ω, this ENHANCEMENT MODE transistor comes in an IN-LINE package with Matte Tin finish, suitable for various electronic circuits.

Median Price

$1.150

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Electronics Inc.

Canada . 1,000 parts In-Stock

1+ parts

$1.150

100+ parts

$0.870

1k+ parts

$0.750

10k+ parts

-

1,000

$1.150

$0.870

$0.750

-

ACDS - Activité Composants Distribution Service

France . 6,700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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6,700

-

-

-

-

Legend Electronics Inc.

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2,000

-

-

-

-

Vyrian

USA . 1,463 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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1,463

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-

-

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Nova Conductors

Japan . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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500

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-

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 2,201 parts In-Stock

1+ parts

$0.310

100+ parts

-

1k+ parts

-

10k+ parts

-

2,201

$0.310

-

-

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Corohmni

South Africa . 342 parts In-Stock

1+ parts

$0.823

100+ parts

-

1k+ parts

-

10k+ parts

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342

$0.823

-

-

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AZTECH Wire

Italy . 521 parts In-Stock

1+ parts

$9.060

100+ parts

-

1k+ parts

-

10k+ parts

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521

$9.060

-

-

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Semicontronic

India . 1,470 parts In-Stock

1+ parts

$62.050

100+ parts

$60.499

1k+ parts

$60.188

10k+ parts

-

1,470

$62.050

$60.499

$60.188

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Perfect Parts

USA . 15,008 parts In-Stock

1+ parts

-

100+ parts

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15,008

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Cyclops Electronics Ltd (Excess)

UK . 6,700 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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6,700

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-

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Continental Prestige Electronics

USA . 6,509 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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6,509

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-

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Glotronic Ltd.

UK . 5,360 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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5,360

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-

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Bastille Electronics

Australia . 200 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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200

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Argo Parts USA

USA . 130 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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130

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Overview

Experience the next level of performance with the ZVP4424ASTOA by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers top-quality products that exceed expectations. The ZVP4424ASTOA falls under the category of Small Signal Field Effect Transistors (FET) and is perfect for switching applications. With a minimum DS Breakdown Voltage of 240V and a Maximum Drain Current of 0.2A, this product offers unmatched reliability and efficiency. Trust Diodes Incorporated to provide you with the high-quality components you need for your projects. Choose the ZVP4424ASTOA and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: P-CHANNEL

Suitable for applications where P-channel transistors are required, offering compatibility with specific circuit designs.

Configuration: SINGLE

Simplified circuit design and easy integration into electronic systems.

Transistor Application: SWITCHING

Ideal for switching applications due to its fast switching speed and low power consumption.

Minimum DS Breakdown Voltage: 240 V

Capable of handling high voltage applications, providing reliability and safety in operation.

Package Shape: RECTANGULAR

Compact design for space-saving installation and neat circuit layouts.

Terminal Form: WIRE

Easy to connect with other components and devices, facilitating installation and maintenance.

Operating Mode: ENHANCEMENT MODE

Allows for precise control over the transistor's conductivity, enhancing performance in various applications.

No. of Terminals: 3

Simple design with minimal connections, reducing the risk of wiring errors and improving reliability.

Package Style (Meter): IN-LINE

Easy to mount and secure in place, suitable for applications where space is limited.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers high efficiency and low power consumption, making it suitable for energy-efficient designs.

Transistor Element Material: SILICON

Provides high performance and reliability, ensuring stable operation in various operating conditions.

Terminal Finish: Matte Tin (Sn)

Corrosion-resistant finish for long-lasting connections and improved conductivity.

Maximum Drain Current (ID): 0.2 A

Capable of handling current requirements in low-power applications, ensuring safe operation.

Maximum Drain-Source On Resistance: 15 ohm

Low resistance for efficient conduction, reducing heat generation and power loss.

Terminal Position: SINGLE

Simplified wiring and connections, making it easy to integrate into electronic circuits.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZVP4424ASTOA attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Configuration:

Minimum DS Breakdown Voltage:

240 V

Maximum Drain Current (ID):

.2 A

Maximum Drain-Source On Resistance:

15 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

WIRE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZVP4424ASTOA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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