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ZVP4525ZTA

Diodes Incorporated

ZVP4525ZTA by Diodes Incorporated

ZVP4525ZTA by Diodes Inc. is a P-CHANNEL FET with 250V DS breakdown voltage, 0.205A max drain current, and 14 ohm max on resistance. Ideal for switching applications in small outline packages, operating from -55 to 150°C with matte tin finish and built-in diode.

Median Price

$0.576

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 4,399 parts In-Stock

1+ parts

$1.710

100+ parts

$0.721

1k+ parts

$0.477

10k+ parts

$0.463

4,399

$1.710

$0.721

$0.477

$0.463

DigiKey

USA . 117 parts In-Stock

1+ parts

$1.710

100+ parts

$0.720

1k+ parts

$0.566

10k+ parts

-

117

$1.710

$0.720

$0.566

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Element14

Singapore . 1,241 parts In-Stock

1+ parts

$1.840

100+ parts

$0.810

1k+ parts

$0.623

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1,241

$1.840

$0.810

$0.623

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Farnell

UK . 1,241 parts In-Stock

1+ parts

-

100+ parts

$0.481

1k+ parts

$0.318

10k+ parts

$0.297

1,241

-

$0.481

$0.318

$0.297

Verical

USA . 1,000 parts In-Stock

1+ parts

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$0.329

10k+ parts

$0.313

1,000

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$0.329

$0.313

Arrow

USA . 1,000 parts In-Stock

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$0.329

10k+ parts

$0.313

1,000

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$0.329

$0.313

Newark

USA . 84 parts In-Stock

1+ parts

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$0.576

1k+ parts

$0.396

10k+ parts

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84

-

$0.576

$0.396

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 1,000 parts In-Stock

1+ parts

$0.796

100+ parts

$0.295

1k+ parts

$0.207

10k+ parts

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1,000

$0.796

$0.295

$0.207

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Chip Stock

USA . 51,000 parts In-Stock

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51,000

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NAC Semi

USA . 10,000 parts In-Stock

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100+ parts

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$0.445

10k+ parts

$0.411

10,000

-

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$0.445

$0.411

Semtec, LLC

USA . 4,041 parts In-Stock

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4,041

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Euro-Tech

UK . 2,570 parts In-Stock

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2,570

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ACDS - Activité Composants Distribution Service

France . 1,000 parts In-Stock

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1,000

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Dan-Mar Components

USA . 1,000 parts In-Stock

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1,000

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ComSIT Distribution GmbH

Germany . 566 parts In-Stock

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566

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 245 parts In-Stock

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245

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Prism Electronics

USA . 59 parts In-Stock

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59

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Nova Conductors

Japan . 26 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 4,748 parts In-Stock

1+ parts

$0.257

100+ parts

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4,748

$0.257

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Semicontronic

India . 4,726 parts In-Stock

1+ parts

$0.257

100+ parts

$0.251

1k+ parts

$0.249

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4,726

$0.257

$0.251

$0.249

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Corohmni

South Africa . 72 parts In-Stock

1+ parts

$0.425

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72

$0.425

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Component Stockers USA

USA . 19,990 parts In-Stock

1+ parts

$0.850

100+ parts

$0.510

1k+ parts

$0.180

10k+ parts

$0.290

19,990

$0.850

$0.510

$0.180

$0.290

Kepictronics

USA . 33,000 parts In-Stock

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Perfect Parts

USA . 13,662 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Continental Prestige Electronics

USA . 2,591 parts In-Stock

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Argo Parts USA

USA . 2,423 parts In-Stock

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Glotronic Ltd.

UK . 1,800 parts In-Stock

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GreenTree Electronics

Israel . 1,000 parts In-Stock

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Aranea Global

USA . 500 parts In-Stock

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500

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Lixinc

USA . 154 parts In-Stock

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154

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Overview

Unlock the power of cutting-edge technology with the ZVP4525ZTA by Diodes Incorporated. Designed for efficiency and reliability, this P-CHANNEL Small Signal Field Effect Transistor is perfect for switching applications. With a minimum DS Breakdown Voltage of 250V and maximum Drain Current of 0.205A, this transistor offers superior performance in a compact package. Trust in Diodes Incorporated's reputation for quality and innovation, and experience the value and benefits that the ZVP4525ZTA brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: P-CHANNEL

Suitable for applications where P-channel transistors are needed.

Configuration: SINGLE WITH BUILT-IN DIODE

Offers more functionality with the built-in diode, saving space in circuit design.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance.

Surface Mount: YES

Easy to install on a circuit board, saving time and effort in assembly.

Minimum DS Breakdown Voltage: 250 V

High breakdown voltage makes it suitable for high voltage applications.

Package Shape: RECTANGULAR

Compact shape for efficient use of space on the circuit board.

Terminal Form: FLAT

Easy to solder onto the circuit board, ensuring a secure connection.

Operating Mode: ENHANCEMENT MODE

Allows for precise control over the transistor's operation for various applications.

Maximum Drain Current (Abs): 0.205 A

Handles moderate current levels, suitable for many low-power applications.

No. of Terminals: 3

Simple to integrate into circuits with only three terminals to connect.

Maximum Power Dissipation (Abs): 1.2 W

Can handle moderate power levels without overheating, ensuring reliable performance.

Package Style (Meter): SMALL OUTLINE

Compact size saves space on the circuit board, ideal for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizes MOSFET technology for efficient switching and amplification capabilities.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation, suitable for various environments.

Transistor Element Material: SILICON

Silicon material offers excellent performance and reliability in transistors.

Minimum Operating Temperature: -55 °C

Can operate in cold temperatures without losing functionality, suitable for a wide range of environments.

Terminal Finish: MATTE TIN

Provides a reliable connection and corrosion resistance for the terminals.

Maximum Drain-Source On Resistance: 14 ohm

Low on-resistance ensures efficient power transfer and minimal voltage drop across the transistor.

Terminal Position: SINGLE

Simplified connection with a single terminal position, reducing complexity in circuit design.

Case Connection: DRAIN

Drain connection simplifies integration into circuits, ensuring proper functionality.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for a specified duration during assembly.

Peak Reflow Temperature °C: 260

Can endure high reflow temperatures during soldering processes without damage.

Technical Specifications

Small Signal Field Effect Transistors (FET) ZVP4525ZTA attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

250 V

Maximum Drain Current (Abs) (ID):

.205 A

Maximum Drain Current (ID):

.205 A

Maximum Drain-Source On Resistance:

14 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ZVP4525ZTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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