Loading...

RDBF310-13

Diodes Incorporated

RDBF310-13 by Diodes Incorporated

RDBF310-13 by Diodes Inc. is a bridge rectifier diode with 4 elements, featuring a max output current of 3A and reverse test voltage of 1000V. With a package style of small outline, matte tin terminal finish, and peak reflow temperature of 260°C, it is ideal for applications requiring efficient AC to DC conversion in compact electronic devices.

Median Price

$0.412

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 109 parts In-Stock

1+ parts

$0.650

100+ parts

$0.336

1k+ parts

-

10k+ parts

-

109

$0.650

$0.336

-

-

DigiKey

USA . 7,519 parts In-Stock

1+ parts

$1.050

100+ parts

$0.427

1k+ parts

$0.299

10k+ parts

$0.194

7,519

$1.050

$0.427

$0.299

$0.194

Arrow

USA . 139 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.174

10k+ parts

-

139

-

-

$0.174

-

Verical

USA . 139 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.174

10k+ parts

-

139

-

-

$0.174

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 558 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

558

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 2,865 parts In-Stock

1+ parts

$0.603

100+ parts

$0.358

1k+ parts

$0.227

10k+ parts

$0.185

2,865

$0.603

$0.358

$0.227

$0.185

RC Electronics

USA . 700 parts In-Stock

1+ parts

-

100+ parts

$0.390

1k+ parts

$0.370

10k+ parts

$0.360

700

-

$0.390

$0.370

$0.360

Overview

Enhance your electronic designs with the RDBF310-13 by Diodes Incorporated, a top-quality bridge rectifier diode that offers superior performance and reliability. With its plastic/epoxy package body material and small outline package style, this product is perfect for a variety of applications. Experience the benefits of fast reverse recovery time, low reverse current, and high breakdown voltage, providing unmatched value and efficiency for your projects. Trust in Diodes Incorporated to deliver innovative solutions for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good insulation, durability, and resistance to heat, making this product suitable for a wide range of applications.

Maximum Reverse Recovery Time: 0.5 us

The low reverse recovery time ensures fast switching and efficient operation of the bridge rectifier diode.

Maximum Reverse Current: 5 uA

Low reverse current helps in minimizing power loss and improving efficiency of the diode.

Terminal Finish: MATTE TIN

MATTE TIN finish on terminals provides good conductivity and solderability, ensuring reliable connections.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the diode to operate in demanding environments without compromising performance.

Technical Specifications

Bridge Rectifier Diodes RDBF310-13 attributes and parameters. Explore more Bridge Rectifier Diodes devices from Diodes Incorporated

Specs

Minimum Breakdown Voltage:

1000 V

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1.3 V

JESD-30 Code:

R-PDSO-F4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

1000 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.5 us

Reverse Test Voltage:

1000 V

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

RDBF310-13 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20