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RDBF31-13

Diodes Incorporated

RDBF31-13 by Diodes Incorporated

RDBF31-13 by Diodes Inc. is a bridge rectifier diode with 4 elements, featuring a max output current of 3A and forward voltage of 1.3V. With a reverse test voltage of 100V, it operates b/w -55°C to 150°C, making it suitable for various applications requiring efficient rectification in compact electronic circuits.

Median Price

$0.437

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,764 parts In-Stock

1+ parts

$0.620

100+ parts

$0.373

1k+ parts

$0.266

10k+ parts

-

2,764

$0.620

$0.373

$0.266

-

Mouser Electronics

USA . 301 parts In-Stock

1+ parts

$1.070

100+ parts

$0.435

1k+ parts

-

10k+ parts

-

301

$1.070

$0.435

-

-

Verical

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.212

3,000

-

-

-

$0.212

Element14

Singapore . 421 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.437

10k+ parts

$0.429

421

-

-

$0.437

$0.429

Farnell

UK . 420 parts In-Stock

1+ parts

-

100+ parts

$0.374

1k+ parts

-

10k+ parts

-

420

-

$0.374

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 2,850 parts In-Stock

1+ parts

-

100+ parts

$0.383

1k+ parts

$0.243

10k+ parts

$0.208

2,850

-

$0.383

$0.243

$0.208

Overview

Enhance your electronic projects with the RDBF31-13 bridge rectifier diode by Diodes Incorporated, a leading manufacturer known for top-quality components. Designed for efficiency and reliability, this versatile component is ideal for a wide range of applications. Whether you're working on power supplies, battery chargers, or motor drives, the RDBF31-13 offers superior performance, low reverse current, and fast recovery time. Trust Diodes Incorporated to deliver value and innovation in every product. Elevate your projects with the RDBF31-13 and experience the difference quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Maximum Reverse Recovery Time: 0.15 us

Fast reverse recovery time allows for efficient switching and reduces power loss in the circuit.

Maximum Reverse Current: 5 uA

Low reverse current minimizes power dissipation and improves overall efficiency of the circuit.

Reverse Test Voltage: 100 V

Suitable for applications requiring voltage rectification up to 100V.

Maximum Operating Temperature: 150 °C

Can operate efficiently in high temperature environments, ensuring reliability in various conditions.

Maximum Output Current: 3 A

Capable of handling high output currents, making it suitable for power supply applications.

Diode Element Material: SILICON

Silicon diodes offer good efficiency and reliability, making them a common choice for rectifier applications.

Technical Specifications

Bridge Rectifier Diodes RDBF31-13 attributes and parameters. Explore more Bridge Rectifier Diodes devices from Diodes Incorporated

Specs

Minimum Breakdown Voltage:

100 V

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1.3 V

JESD-30 Code:

R-PDSO-F4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.15 us

Reverse Test Voltage:

100 V

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

RDBF31-13 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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