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RDBF256-13

Diodes Incorporated

RDBF256-13 by Diodes Incorporated

RDBF256-13 by Diodes Inc. is a bridge rectifier diode with 4 elements, featuring a max output current of 2.5A and a reverse test voltage of 600V. With a package style of small outline and surface mount capability, it is ideal for applications requiring efficient AC to DC conversion in compact electronic devices.

Median Price

$0.630

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,950 parts In-Stock

1+ parts

$0.630

100+ parts

$0.373

1k+ parts

$0.237

10k+ parts

-

2,950

$0.630

$0.373

$0.237

-

Mouser Electronics

USA . 1,873 parts In-Stock

1+ parts

$0.980

100+ parts

$0.415

1k+ parts

$0.272

10k+ parts

-

1,873

$0.980

$0.415

$0.272

-

Verical

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.183

10k+ parts

-

3,000

-

-

$0.183

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,000

-

-

-

-

Eastek

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Overview

Upgrade your electronic projects with the high-quality RDBF256-13 Bridge Rectifier Diode by Diodes Incorporated. With a durable plastic/epoxy package body, this bridge rectifier diode offers reliable performance in a compact rectangular package style. Ideal for a variety of applications, this diode boasts a maximum reverse test voltage of 600V and a maximum output current of 2.5A, ensuring efficient power conversion. Trust in Diodes Incorporated's reputation for excellence and choose the RDBF256-13 for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, suitable for various applications.

Surface Mount: YES

Being surface mountable, this product is easy to install and saves space on PCB.

Maximum Reverse Recovery Time: 0.25 us

The low reverse recovery time ensures fast switching performance and efficiency.

Maximum Reverse Current: 5 uA

Low reverse current ensures minimal energy loss and high efficiency in operation.

Minimum Operating Temperature: -55 °C

Wide operating temperature range allows this product to be used in harsh environments.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this product can withstand high temperatures without performance degradation.

Maximum Output Current: 2.5 A

High maximum output current makes this product suitable for applications requiring higher power handling capabilities.

Technical Specifications

Bridge Rectifier Diodes RDBF256-13 attributes and parameters. Explore more Bridge Rectifier Diodes devices from Diodes Incorporated

Specs

Minimum Breakdown Voltage:

600 V

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1.3 V

JESD-30 Code:

R-PDSO-F4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

2.5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.25 us

Reverse Test Voltage:

600 V

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

RDBF256-13 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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