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MBRM3100-13

Diodes Incorporated

MBRM3100-13 by Diodes Incorporated

MBRM3100-13 by Diodes Inc. is a single Schottky rectifier diode with a max forward voltage of 0.64V and max output current of 3A. It is used for efficiency applications, has a small outline package style, and operates in temperatures ranging from -55 to 125°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,303 parts In-Stock

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8,303

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Elcom Components

USA . 4,158 parts In-Stock

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4,158

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Nova Conductors

Japan . 550 parts In-Stock

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550

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Prism Electronics

USA . 2 parts In-Stock

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2

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 5,432 parts In-Stock

1+ parts

$0.070

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5,432

$0.070

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Corohmni

South Africa . 518 parts In-Stock

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$0.112

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518

$0.112

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Ampacity Inc.

Singapore . 1,340 parts In-Stock

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$1.010

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1,340

$1.010

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Semicontronic

India . 254 parts In-Stock

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$1.010

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$0.985

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$0.980

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254

$1.010

$0.985

$0.980

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Andel Nordic

Denmark . 1,781 parts In-Stock

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$10.074

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$9.671

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$9.671

1,781

$10.074

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$9.671

$9.671

AZTECH Wire

Italy . 408 parts In-Stock

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$15.207

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408

$15.207

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Component Stockers USA

USA . 316 parts In-Stock

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$99.990

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316

$99.990

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Argo Parts USA

USA . 1,133 parts In-Stock

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Bastille Electronics

Australia . 1,000 parts In-Stock

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Continental Prestige Electronics

USA . 341 parts In-Stock

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341

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Perfect Parts

USA . 30 parts In-Stock

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Overview

Discover the MBRM3100-13 by Diodes Incorporated, a high-quality rectifier diode that offers exceptional performance and reliability. As a leading manufacturer in the industry, Diodes Incorporated is committed to delivering top-notch products for various applications. The MBRM3100-13 stands out with its efficiency and Schottky technology, providing customers with maximum output current of 3A and a low forward voltage of 0.64V. With its small outline package style and gull wing terminal form, this diode offers ease of installation and space-saving benefits. Trust Diodes Incorporated to provide you with cutting-edge solutions that deliver value and exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, making it resistant to environmental factors and allowing for reliable performance.

Config: SINGLE

The single configuration of this diode simplifies its application and makes it suitable for various electronic circuits.

Surface Mount: YES

With surface mount capability, this diode can be easily and securely mounted on printed circuit boards, saving space and facilitating automated assembly processes.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for efficient use of board space and easy incorporation into designs.

No. of Terminals: 2

The two-terminal design simplifies the circuit connection and enhances installation convenience.

Package Style (Meter): SMALL OUTLINE

The small outline package style ensures compactness and versatility in circuit design.

Application: EFFICIENCY

This diode is specifically designed for efficient applications, making it an ideal choice for power management, voltage regulation, and energy-saving circuits.

Maximum Operating Temperature: 125 °C

The diode's ability to operate at a maximum temperature of 125°C ensures reliability and stable performance even in high-temperature environments.

Minimum Operating Temperature: -55 °C

With a minimum operating temperature of -55°C, this diode can withstand extremely cold conditions, allowing it to handle a wide range of operating environments.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides good solderability and electrical conductivity, ensuring secure connections and efficient current flow.

Terminal Position: SINGLE

The single terminal position simplifies circuit integration and facilitates consistent electrical routing.

Case Connection: CATHODE

The cathode case connection allows for easy and effective heat dissipation, contributing to the diode's overall reliability and longevity.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product provides low forward voltage drop and high current capability, making it suitable for various rectification and power conversion applications.

Maximum Forward Voltage (VF): 0.64 V

With a maximum forward voltage of 0.64 volts, this diode achieves efficient energy conversion and minimizes power losses.

Maximum Output Current: 3 A

The diode's maximum output current of 3 amperes enables it to handle high-current applications effectively.

Technology: SCHOTTKY

The Schottky technology employed in this diode allows for fast switching speeds and low reverse-recovery time, making it suitable for high-frequency applications and reducing power dissipation.

Terminal Form: GULL WING

The gull wing terminal form facilitates easy integration into surface mount technology (SMT) processes, ensuring precise and reliable connections.

Maximum Repetitive Peak Reverse Voltage: 100 V

With a maximum repetitive peak reverse voltage of 100 volts, this diode can handle high voltage requirements with efficiency and reliability.

Maximum Non-Repetitive Peak Forward Current: 50 A

The diode's maximum non-repetitive peak forward current of 50 amperes allows it to handle large current surges and transient conditions effectively.

Diode Element Material: SILICON

The silicon diode element material provides high temperature stability and excellent electrical properties, ensuring reliable and long-lasting performance.

Technical Specifications

Diodes & Rectifiers MBRM3100-13 attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Additional Features:

LOW POWER LOSS, FREE WHEELING DIODE

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.64 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MBRM3100-13 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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