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FCX491QTA

Diodes Incorporated

FCX491QTA by Diodes Incorporated

FCX491QTA by Diodes Inc. is a NPN BJT transistor with hFE of 30, Vce of 60V, and Ic of 1A. It is designed for small outline packages in automotive applications meeting AEC-Q101 standards.

Median Price

$0.830

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,990 parts In-Stock

1+ parts

$0.830

100+ parts

$0.329

1k+ parts

$0.221

10k+ parts

$0.164

1,990

$0.830

$0.329

$0.221

$0.164

DigiKey

USA . 1,198 parts In-Stock

1+ parts

$0.840

100+ parts

$0.336

1k+ parts

$0.232

10k+ parts

$0.173

1,198

$0.840

$0.336

$0.232

$0.173

Verical

USA . 199,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.156

10k+ parts

-

199,000

-

-

$0.156

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

QUARKTWIN TECHNOLOGY LTD

USA . 26,576 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

26,576

-

-

-

-

Northwest PG Solutions

USA . 1,843 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,843

-

-

-

-

Native Components

USA . 197 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

197

-

-

-

-

Overview

Enhance your electronic projects with the high-quality FCX491QTA Small Signal Bipolar Junction Transistor by Diodes Incorporated. This NPN transistor is designed for maximum performance and reliability, making it ideal for a wide range of applications. With a compact package style and excellent DC current gain, this transistor offers exceptional value and benefits to customers looking for superior quality components. Trust in Diodes Incorporated for all your transistor needs and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body makes the transistor lightweight and durable, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier and switching circuits, making this transistor versatile for different electronic designs.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to integrate into a system.

Surface Mount: YES

Being surface mountable saves space on the PCB and eliminates the need for additional components for through-hole mounting, increasing design flexibility.

No. of Terminals: 3

Having 3 terminals allows for easy connection to other components in the circuit, enhancing usability.

Maximum Collector-Emitter Voltage: 60 V

The high collector-emitter voltage rating ensures the transistor can handle higher voltages, making it suitable for a wide range of applications.

Maximum Collector Current (IC): 1 A

With a high collector current rating of 1 A, this transistor can handle high current levels, making it suitable for power applications.

Nominal Transition Frequency (fT): 150 MHz

The high nominal transition frequency indicates fast switching speeds, making this transistor ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) FCX491QTA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FCX491QTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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