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FCX491ATA

Diodes Incorporated

FCX491ATA by Diodes Incorporated

FCX491ATA by Diodes Inc. is a NPN BJT transistor with 1W power dissipation, hFE of 35, and max collector-emitter voltage of 40V. Ideal for switching applications in small outline packages, it operates up to 150°C with a transition frequency of 150MHz.

Median Price

$0.193

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 26,000 parts In-Stock

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$0.131

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$0.131

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Arrow

USA . 21,647 parts In-Stock

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$0.201

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$0.149

21,647

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$0.149

Farnell

UK . 1,039 parts In-Stock

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$0.193

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$0.128

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$0.121

1,039

-

$0.193

$0.128

$0.121

Distributors (In-Stock)

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Forefront Electronics and Design

USA . 15 parts In-Stock

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$1.470

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$1.470

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Bristol Electronics

USA . 25,170 parts In-Stock

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Vyrian

USA . 25,013 parts In-Stock

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IBS Electronics

USA . 21,000 parts In-Stock

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$0.156

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$0.152

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$0.152

Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 7,040 parts In-Stock

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ComSIT Distribution GmbH

Germany . 5,420 parts In-Stock

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Prism Electronics

USA . 5,040 parts In-Stock

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NAC Semi

USA . 4,000 parts In-Stock

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$0.207

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$0.191

4,000

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$0.191

Netsource Technology, Inc.

USA . 2,990 parts In-Stock

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Florida Circuit

USA . 2,506 parts In-Stock

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Atlantic Semiconductor

USA . 2,171 parts In-Stock

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Sea View Technologies

USA . 955 parts In-Stock

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Diverse Electronics

Canada . 800 parts In-Stock

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Sunrise Surplus Inc.

USA . 666 parts In-Stock

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666

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Nova Conductors

Japan . 600 parts In-Stock

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600

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Inventory MP

USA . 465 parts In-Stock

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465

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Flex Direct, LLC

USA . 404 parts In-Stock

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404

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Semtec, LLC

USA . 150 parts In-Stock

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Electronics Depot

USA . 125 parts In-Stock

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Corohmni

South Africa . 470 parts In-Stock

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$0.379

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470

$0.379

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Aztec Data Supply Inc.

USA . 3,587 parts In-Stock

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$0.609

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$0.609

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Benley Electronics

USA . 4 parts In-Stock

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$1.750

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Metaverse IC Inc.

Canada . 210,000 parts In-Stock

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Perfect Parts

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Futuretech Components

Singapore . 30,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Argo Parts USA

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Glotronic Ltd.

UK . 3,790 parts In-Stock

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Kepictronics

USA . 3,300 parts In-Stock

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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Continental Prestige Electronics

USA . 2,492 parts In-Stock

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$0.271

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$0.150

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$0.137

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$0.137

Lixinc

USA . 2,328 parts In-Stock

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Authorized Procurement Solutions

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iodParts Technologies Inc.

India . 1,000 parts In-Stock

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$0.266

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Eastek

USA . 1,000 parts In-Stock

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$0.208

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Computer Components Inc. - USA

USA . 1,000 parts In-Stock

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Aranea Global

USA . 100 parts In-Stock

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100

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Overview

Unleash the power of innovation with the FCX491ATA by Diodes Incorporated, a leading manufacturer in the industry. This Small Signal Bipolar Junction Transistor (BJT) offers unparalleled quality and reliability for a wide range of applications including switching. With a maximum collector-emitter voltage of 40V and a minimum DC current gain of 35, this NPN transistor is designed to deliver exceptional performance. Whether you're a DIY enthusiast or a seasoned professional, the FCX491ATA provides the value, benefits, and advantages you need to take your projects to the next level. Experience the difference with Diodes Incorporated.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the transistor, enhancing its durability and reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this product versatile and suitable for various circuit designs.

Configuration: SINGLE

Single configuration simplifies circuit design and layout, making it easier to integrate into a system.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and low power consumption.

Surface Mount: YES

Surface mount capability allows for easy and compact installation on PCBs, saving space and improving assembly efficiency.

Maximum Power Dissipation (Abs): 1 W

With a high maximum power dissipation, this transistor can handle moderate power levels without overheating.

Maximum Operating Temperature: 150 °C

Operating temperature of 150°C ensures reliable performance in a wide range of environmental conditions.

Maximum Collector-Emitter Voltage: 40 V

High maximum collector-emitter voltage rating allows for operation in circuits with higher voltage levels.

Maximum Collector Current (IC): 1 A

High collector current rating enables the transistor to handle relatively high current loads.

Nominal Transition Frequency (fT): 150 MHz

High transition frequency allows for high-speed switching and amplification applications, making it suitable for demanding circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) FCX491ATA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FCX491ATA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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