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FCX495TA

Diodes Incorporated

FCX495TA by Diodes Incorporated

FCX495TA by Diodes Inc. is a NPN BJT transistor with 3 terminals, capable of handling up to 1A collector current and 150V collector-emitter voltage. With a min hFE of 100, it's ideal for switching applications at temperatures up to 150°C in surface mount designs.

Median Price

$0.214

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 2,000 parts In-Stock

1+ parts

$0.213

100+ parts

$0.196

1k+ parts

$0.184

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-

2,000

$0.213

$0.196

$0.184

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Mouser Electronics

USA . 995 parts In-Stock

1+ parts

$0.740

100+ parts

$0.291

1k+ parts

$0.224

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995

$0.740

$0.291

$0.224

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Verical

USA . 28,000 parts In-Stock

1+ parts

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$0.163

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$0.136

28,000

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$0.163

$0.136

Farnell

UK . 2,490 parts In-Stock

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$0.231

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$0.199

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2,490

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$0.231

$0.199

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Element14

Singapore . 2,490 parts In-Stock

1+ parts

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100+ parts

$0.216

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$0.202

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2,490

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$0.216

$0.202

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Arrow

USA . 46 parts In-Stock

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$0.193

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46

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$0.193

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Distributors (In-Stock)

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.189

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50

$0.189

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Semtec, LLC

USA . 67,704 parts In-Stock

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Vyrian

USA . 58,633 parts In-Stock

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Chip Stock

USA . 45,350 parts In-Stock

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45,350

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IBS Electronics

USA . 18,000 parts In-Stock

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$0.170

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$0.165

18,000

-

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$0.170

$0.165

EPE Components Inc.

USA . 2,849 parts In-Stock

1+ parts

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2,849

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Bristol Electronics

USA . 2,849 parts In-Stock

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2,849

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NAC Semi

USA . 2,000 parts In-Stock

1+ parts

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1k+ parts

$0.250

10k+ parts

$0.231

2,000

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$0.250

$0.231

Prism Electronics

USA . 223 parts In-Stock

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223

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Electronics Depot

USA . 195 parts In-Stock

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Classic Components Corporation

USA . 90 parts In-Stock

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90

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Elcom Components

USA . 21 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 60,296 parts In-Stock

1+ parts

$0.111

100+ parts

$0.108

1k+ parts

$0.108

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60,296

$0.111

$0.108

$0.108

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Argo Parts USA

USA . 677 parts In-Stock

1+ parts

$0.189

100+ parts

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$0.183

677

$0.189

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-

$0.183

Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$0.213

100+ parts

$0.196

1k+ parts

$0.184

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2,000

$0.213

$0.196

$0.184

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Aztec Data Supply Inc.

USA . 1,762 parts In-Stock

1+ parts

$0.385

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1,762

$0.385

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Corohmni

South Africa . 331 parts In-Stock

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$1.236

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331

$1.236

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Modulus Dynamics

Lithuania . 21,949 parts In-Stock

1+ parts

$1.668

100+ parts

$1.668

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$1.668

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21,949

$1.668

$1.668

$1.668

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Benley Electronics

USA . 4 parts In-Stock

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$2.000

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4

$2.000

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Metaverse IC Inc.

Canada . 180,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 9,617 parts In-Stock

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Perfect Parts

USA . 6,042 parts In-Stock

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Eastek

USA . 6,000 parts In-Stock

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$0.206

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6,000

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$0.206

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Lixinc

USA . 5,428 parts In-Stock

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Continental Prestige Electronics

USA . 3,070 parts In-Stock

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$0.250

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$0.140

10k+ parts

$0.132

3,070

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$0.250

$0.140

$0.132

Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Kepictronics

USA . 1,500 parts In-Stock

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1,500

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Assy Fe

Spain . 1,000 parts In-Stock

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Formix International (Excess)

India . 201 parts In-Stock

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201

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GreenTree Electronics

Israel . 179 parts In-Stock

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179

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Overview

Unlock the power of innovation with the FCX495TA by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated presents this high-quality Small Signal Bipolar Junction Transistor (BJT) for all your switching needs. With a single NPN configuration and a maximum operating temperature of 150°C, this transistor offers unparalleled performance and reliability. Whether you're building consumer electronics, industrial equipment, or automotive applications, the FCX495TA's small outline package and matte tin finish provide the perfect solution for your project. Experience the value and benefits that Diodes Incorporated brings to the table with the FCX495TA.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package provides durability and protection for the transistor, making it suitable for a variety of environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering versatility in circuit design.

Configuration: SINGLE

Single configuration simplifies circuit design and makes installation easier.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing fast and efficient operation.

Surface Mount: YES

Surface mount capability allows for easy integration into compact electronic devices and pcb designs.

Minimum DC Current Gain (hFE): 100

High minimum DC current gain ensures consistent and reliable performance in amplification circuits.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable operation in a wide range of environments.

Maximum Collector-Emitter Voltage: 150 V

High maximum collector-emitter voltage rating increases the versatility of the transistor for different applications.

Maximum Collector Current (IC): 1 A

Maximum collector current rating of 1A allows for handling of higher current loads in the circuit.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency enables the transistor to switch at higher speeds, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) FCX495TA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

150 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FCX495TA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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