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DPLS160-7

Diodes Incorporated

DPLS160-7 by Diodes Incorporated

DPLS160-7 by Diodes Incorporated is a PNP BJT with 60V VCEO, 1A IC, and 220MHz fT. Ideal for small signal applications in electronics due to its high DC current gain of hFE ≥100 and compact SMALL OUTLINE package style for surface mount assembly. With a max power dissipation of 0.3W and operating temp up to 150°C, it's suitable for various electronic designs requiring reliable performance in constrained spaces.

Median Price

$0.154

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 2,935 parts In-Stock

1+ parts

$0.450

100+ parts

$0.132

1k+ parts

$0.117

10k+ parts

-

2,935

$0.450

$0.132

$0.117

-

Mouser Electronics

USA . 2,243 parts In-Stock

1+ parts

$0.450

100+ parts

$0.132

1k+ parts

$0.117

10k+ parts

$0.075

2,243

$0.450

$0.132

$0.117

$0.075

DigiKey

USA . 3,009 parts In-Stock

1+ parts

$0.460

100+ parts

$0.179

1k+ parts

$0.119

10k+ parts

$0.087

3,009

$0.460

$0.179

$0.119

$0.087

Verical

USA . 186,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.068

186,000

-

-

-

$0.068

Future Electronics

Canada . 30,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.045

30,000

-

-

-

$0.045

Element14

Singapore . 2,960 parts In-Stock

1+ parts

-

100+ parts

$0.154

1k+ parts

$0.103

10k+ parts

$0.092

2,960

-

$0.154

$0.103

$0.092

Farnell

UK . 2,935 parts In-Stock

1+ parts

-

100+ parts

$0.108

1k+ parts

$0.088

10k+ parts

-

2,935

-

$0.108

$0.088

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Forefront Electronics and Design

USA . 10 parts In-Stock

1+ parts

$0.980

100+ parts

-

1k+ parts

-

10k+ parts

-

10

$0.980

-

-

-

NAC Semi

USA . 24,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.079

24,000

-

-

-

$0.079

IBS Electronics

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.086

3,000

-

-

-

$0.086

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 2,990 parts In-Stock

1+ parts

$0.427

100+ parts

$0.176

1k+ parts

$0.094

10k+ parts

$0.070

2,990

$0.427

$0.176

$0.094

$0.070

Perfect Parts

USA . 21,780 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

21,780

-

-

-

-

Lixinc

USA . 5,412 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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5,412

-

-

-

-

Kepictronics

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Eastek

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Northwest PG Solutions

USA . 533 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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533

-

-

-

-

Native Components

USA . 529 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

529

-

-

-

-

Authorized Procurement Solutions

USA . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

500

-

-

-

-

Overview

Upgrade your electronic devices with the DPLS160-7 by Diodes Incorporated, a top-of-the-line PNP small signal bipolar junction transistor. Manufactured with high-quality materials and cutting-edge technology, this product offers superior performance and reliability for a wide range of applications. With a maximum power dissipation of 0.3W and a maximum collector-emitter voltage of 60V, the DPLS160-7 is designed to deliver exceptional results while ensuring longevity and efficiency. Trust Diodes Incorporated to provide you with the best in transistor technology and take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits, making this transistor suitable for a wide range of applications.

Maximum Power Dissipation (Abs): 0.3 W

With a high maximum power dissipation, this transistor can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 100

A minimum DC current gain of 100 ensures reliable amplification in various circuits.

Maximum Operating Temperature: 150 °C

This transistor can operate safely at high temperatures, making it suitable for applications that require reliable performance in extreme conditions.

Maximum Collector-Emitter Voltage: 60 V

With a high collector-emitter voltage rating, this transistor can safely handle higher voltages in circuits.

Maximum Collector Current (IC): 1 A

This transistor can handle relatively high collector currents, allowing for use in a variety of applications.

Nominal Transition Frequency (fT): 220 MHz

The high nominal transition frequency indicates fast switching speeds, making this transistor suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DPLS160-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DPLS160-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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