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DPLS4140E-13

Diodes Incorporated

DPLS4140E-13 by Diodes Incorporated

DPLS4140E-13 by Diodes Inc. is a PNP BJT transistor with 4 terminals, max power dissipation of 1W, and max collector-emitter voltage of 140V. Ideal for switching applications due to its high transition frequency of 150MHz and max collector current of 4A. Package style is small outline, making it suitable for surface mount designs.

Median Price

$0.460

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 32,500 parts In-Stock

1+ parts

$0.149

100+ parts

-

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32,500

$0.149

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Mouser Electronics

USA . 3,593 parts In-Stock

1+ parts

$0.770

100+ parts

$0.319

1k+ parts

$0.221

10k+ parts

$0.172

3,593

$0.770

$0.319

$0.221

$0.172

DigiKey

USA . 6,302 parts In-Stock

1+ parts

$0.810

100+ parts

$0.326

1k+ parts

$0.224

10k+ parts

$0.172

6,302

$0.810

$0.326

$0.224

$0.172

Verical

USA . 62,500 parts In-Stock

1+ parts

-

100+ parts

-

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$0.150

62,500

-

-

-

$0.150

Avnet

USA . 2,500 parts In-Stock

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-

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2,500

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Electronics Inc.

Canada . 20 parts In-Stock

1+ parts

$0.500

100+ parts

$0.380

1k+ parts

$0.330

10k+ parts

-

20

$0.500

$0.380

$0.330

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NAC Semi

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

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2,500

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-

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Connector Distribution Corp

USA . 750 parts In-Stock

1+ parts

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750

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Right Parts Inc.

USA . 750 parts In-Stock

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750

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 157,111 parts In-Stock

1+ parts

$0.500

100+ parts

$0.300

1k+ parts

$0.190

10k+ parts

$0.140

157,111

$0.500

$0.300

$0.190

$0.140

Microchip USA

USA . 246 parts In-Stock

1+ parts

$1.160

100+ parts

$1.150

1k+ parts

$1.150

10k+ parts

$1.150

246

$1.160

$1.150

$1.150

$1.150

Native Components

USA . 652 parts In-Stock

1+ parts

$6.560

100+ parts

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652

$6.560

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Perfect Parts

USA . 10,901 parts In-Stock

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10,901

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Lixinc

USA . 7,058 parts In-Stock

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7,058

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Kepictronics

USA . 4,500 parts In-Stock

1+ parts

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4,500

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Eastek

USA . 2,500 parts In-Stock

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2,500

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Northwest PG Solutions

USA . 6 parts In-Stock

1+ parts

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100+ parts

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$6.429

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6

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$6.429

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Overview

Discover the power of the DPLS4140E-13 from Diodes Incorporated, a leading manufacturer known for top-quality small signal bipolar junction transistors. This PNP transistor is perfect for switching applications, offering high reliability and performance in a compact package. With a maximum collector-emitter voltage of 140V and a maximum collector current of 4A, this transistor is designed to handle a wide range of tasks with ease. Whether you're working on industrial equipment or consumer electronics, the DPLS4140E-13 provides the value, benefits, and advantages you need to succeed. Upgrade your designs today with this cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, ensuring reliability and durability.

Polarity or Channel Type: PNP

Useful for applications requiring PNP transistors, enabling compatibility with specific circuit designs.

Configuration: SINGLE

Simplified design with a single transistor, making it easier to integrate into circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, offering fast response times and efficient performance.

Surface Mount: YES

Facilitates easy and efficient PCB assembly, saving space and allowing for automated assembly processes.

Terminal Form: GULL WING

Gull wing terminals provide strong mechanical support and reliable connections during soldering.

Maximum Power Dissipation (Abs): 1 W

Suitable for low-power applications, ensuring efficient power handling and minimal heat dissipation.

Maximum Operating Temperature: 150 °C

Can operate at relatively high temperatures, making it suitable for a wide range of environments and conditions.

Maximum Collector-Emitter Voltage: 140 V

Handles high voltage levels, ensuring reliable performance in demanding applications.

Maximum Collector Current (IC): 4 A

Capable of handling high currents, making it suitable for various power switching applications.

Nominal Transition Frequency (fT): 150 MHz

Provides high-frequency operation, allowing for fast switching speeds and high-performance signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DPLS4140E-13 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

140 V

Configuration:

Minimum DC Current Gain (hFE):

45

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DPLS4140E-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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