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DMG4800LFG-7

Diodes Incorporated

DMG4800LFG-7 by Diodes Incorporated

DMG4800LFG-7 by Diodes Inc. is a N-channel FET with 30V DS breakdown voltage, 7.44A max drain current, and 0.017 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max temp of 150°C. The package is small outline SMD type with drain case connection.

Median Price

$0.740

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 9,000 parts In-Stock

1+ parts

$0.740

100+ parts

$0.295

1k+ parts

$0.202

10k+ parts

$0.146

9,000

$0.740

$0.295

$0.202

$0.146

Mouser Electronics

USA . 51 parts In-Stock

1+ parts

$0.760

100+ parts

$0.289

1k+ parts

$0.200

10k+ parts

$0.152

51

$0.760

$0.289

$0.200

$0.152

Verical

USA . 18,000 parts In-Stock

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$0.131

18,000

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$0.131

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NAC Semi

USA . 3,000 parts In-Stock

1+ parts

-

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$0.191

3,000

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$0.191

Cyclops Electronics Ltd

UK . 1,112 parts In-Stock

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1,112

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Nova Conductors

Japan . 600 parts In-Stock

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600

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Distributors (Availability)

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Corohmni

South Africa . 195 parts In-Stock

1+ parts

$1.162

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195

$1.162

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Lixinc

USA . 9,341 parts In-Stock

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9,341

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Kepictronics

USA . 3,000 parts In-Stock

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3,000

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Eastek

USA . 3,000 parts In-Stock

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$0.170

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3,000

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$0.170

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Aranea Global

USA . 2,000 parts In-Stock

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2,000

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Argo Parts USA

USA . 1,842 parts In-Stock

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1,842

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Futuretech Components

Singapore . 983 parts In-Stock

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983

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Continental Prestige Electronics

USA . 887 parts In-Stock

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Overview

Enhance your electronic designs with the DMG4800LFG-7 by Diodes Incorporated. This high-quality Small Signal Field Effect Transistor offers reliable switching performance in a compact package. Ideal for a variety of applications, this N-CHANNEL FET provides efficiency and precision without compromising on durability. With a maximum drain current of 7.44 A and a minimum DS breakdown voltage of 30 V, this transistor is a valuable addition to any project. Upgrade your designs with the DMG4800LFG-7 and experience enhanced performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection and insulation for the internal components of the transistor.

Polarity or Channel Type: N-CHANNEL

Suitable for applications requiring an N-channel FET, offering compatibility with other components.

Configuration: SINGLE WITH BUILT-IN DIODE

Convenient for circuits requiring a diode, reducing the need for additional components.

Transistor Application: SWITCHING

Ideal for applications where fast switching is necessary, providing efficient performance.

Surface Mount: YES

Easy to mount on PCBs, saving space and simplifying the assembly process.

Minimum DS Breakdown Voltage: 30 V

Provides a high breakdown voltage, ensuring reliable operation in various conditions.

Maximum Drain Current (ID): 7.44 A

Capable of handling high current loads, suitable for power applications.

Maximum Power Dissipation (Abs): 0.94 W

Efficiently dissipates heat generated during operation, contributing to the reliability of the transistor.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizes MOSFET technology for performance advantages such as high speed and low power consumption.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without loss of functionality, ensuring reliability in harsh environments.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMG4800LFG-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

7.44 A

Maximum Drain Current (ID):

7.44 A

Maximum Drain-Source On Resistance:

.017 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-N5

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMG4800LFG-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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