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DMG3407SSN-7

Diodes Incorporated

DMG3407SSN-7 by Diodes Incorporated

DMG3407SSN-7 by Diodes Inc. is a P-channel FET with 30V DS breakdown voltage, 4A max drain current, and 0.05 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Features Gull Wing terminals, small outline package style, and operates up to 150°C.

Median Price

$0.328

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 4,007 parts In-Stock

1+ parts

$0.550

100+ parts

$0.215

1k+ parts

$0.144

10k+ parts

$0.095

4,007

$0.550

$0.215

$0.144

$0.095

DigiKey

USA . 2,044 parts In-Stock

1+ parts

$0.550

100+ parts

$0.215

1k+ parts

$0.144

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-

2,044

$0.550

$0.215

$0.144

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Arrow

USA . 9,000 parts In-Stock

1+ parts

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$0.026

9,000

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$0.026

Verical

USA . 2,921 parts In-Stock

1+ parts

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$0.107

2,921

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$0.107

Distributors (In-Stock)

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North Shore Components

USA . 9,000 parts In-Stock

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9,000

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Nova Conductors

Japan . 750 parts In-Stock

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750

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LWI Electronics Inc

India . 29 parts In-Stock

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29

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Distributors (Availability)

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Ampacity Inc.

Singapore . 9,124 parts In-Stock

1+ parts

$0.022

100+ parts

-

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9,124

$0.022

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Semicontronic

India . 9,377 parts In-Stock

1+ parts

$0.048

100+ parts

$0.047

1k+ parts

$0.047

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9,377

$0.048

$0.047

$0.047

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Corohmni

South Africa . 107 parts In-Stock

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$0.125

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107

$0.125

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Kepictronics

USA . 34,637 parts In-Stock

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34,637

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Glotronic Ltd.

UK . 16,737 parts In-Stock

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16,737

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Argo Parts USA

USA . 5,203 parts In-Stock

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5,203

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Eastek

USA . 3,000 parts In-Stock

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$0.090

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3,000

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$0.090

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Continental Prestige Electronics

USA . 1,559 parts In-Stock

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1,559

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iodParts Technologies Inc.

India . 179 parts In-Stock

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179

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GreenTree Electronics

Israel . 179 parts In-Stock

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179

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Aranea Global

USA . 50 parts In-Stock

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50

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Lixinc

USA . 2 parts In-Stock

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2

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Overview

Enhance your electronic projects with the DMG3407SSN-7 by Diodes Incorporated. This small signal field effect transistor offers reliable performance and high-quality construction, making it a top choice for a wide range of applications in switching circuits. With its P-channel configuration and built-in diode, this transistor provides efficient power management and optimal functionality. Trust Diodes Incorporated to deliver value and innovation with every product, ensuring that you get the best results for your projects. Upgrade your electronics today with the DMG3407SSN-7 and experience the difference in performance and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protects the internal components of the transistor, making it suitable for various applications.

Polarity or Channel Type: P-CHANNEL

P-channel transistors are known for their low on-resistance and high current carrying capabilities, making them ideal for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for efficient switching and helps in protecting the transistor from voltage spikes, enhancing its performance and reliability.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast and efficient operation.

Surface Mount: YES

Ease of installation and space-saving design for modern electronic devices with surface mount capability.

Minimum DS Breakdown Voltage: 30 V

Suitable for applications requiring a minimum breakdown voltage of 30 V, providing a margin of safety.

Package Shape: RECTANGULAR

Rectangular shape allows for compact design and easy integration into circuit boards.

Terminal Form: GULL WING

Gull wing terminals provide secure solder joint connections and are suitable for automated assembly processes.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation offers better control over the transistor's conductivity, improving overall performance.

Maximum Drain Current (Abs) (ID): 4 A

High maximum drain current rating allows for handling high currents, making it suitable for a wide range of applications.

No. of Terminals: 3

Three terminals provide necessary connections for the transistor to function effectively in a circuit.

Maximum Power Dissipation (Abs): 1.8 W

Capable of dissipating up to 1.8 W of power, ensuring reliable operation under varying load conditions.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and is suitable for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance and reliability in various applications.

Maximum Operating Temperature: 150 °C

Can operate at temperatures up to 150°C, suitable for industrial and automotive applications.

Transistor Element Material: SILICON

Silicon material provides high performance and reliability for the transistor in different operating conditions.

Terminal Finish: MATTE TIN

Matte tin finish ensures good solderability and corrosion resistance for the terminals.

Maximum Drain-Source On Resistance: 0.05 ohm

Low drain-source on resistance of 0.05 ohm reduces power losses and enhances efficiency in switching applications.

Terminal Position: DUAL

Dual terminal position allows for easy connection to the circuit, enhancing versatility in different design configurations.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for up to 30 seconds, ensuring reliability during soldering processes.

Peak Reflow Temperature °C: 260

Rated for peak reflow temperatures of 260°C, suitable for lead-free soldering processes.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMG3407SSN-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

4 A

Maximum Drain Current (ID):

3.3 A

Maximum Drain-Source On Resistance:

.05 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMG3407SSN-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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