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DMG301NU-7

Diodes Incorporated

DMG301NU-7 by Diodes Incorporated

DMG301NU-7 by Diodes Inc. is a N-channel FET with 25V DS breakdown voltage, 0.26A max drain current, and 4 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a temp range of -55 to 150°C. Suitable for surface mount designs in automotive electronics due to AEC-Q101 compliance.

Median Price

$0.095

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 10,492 parts In-Stock

1+ parts

$0.480

100+ parts

$0.178

1k+ parts

$0.154

10k+ parts

$0.099

10,492

$0.480

$0.178

$0.154

$0.099

Mouser Electronics

USA . 15,276 parts In-Stock

1+ parts

$0.590

100+ parts

$0.232

1k+ parts

$0.156

10k+ parts

$0.110

15,276

$0.590

$0.232

$0.156

$0.110

Verical

USA . 9,999,000 parts In-Stock

1+ parts

-

100+ parts

-

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$0.095

9,999,000

-

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$0.095

Future Electronics

Canada . 756,000 parts In-Stock

1+ parts

-

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$0.036

756,000

-

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$0.036

Avnet

USA . 27,000 parts In-Stock

1+ parts

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27,000

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Arrow

USA . 9,000 parts In-Stock

1+ parts

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10k+ parts

$0.071

9,000

-

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-

$0.071

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TME

Poland . 2,974 parts In-Stock

1+ parts

$0.399

100+ parts

$0.186

1k+ parts

$0.123

10k+ parts

$0.101

2,974

$0.399

$0.186

$0.123

$0.101

Sensible Micro Corp

USA . 2,455,014 parts In-Stock

1+ parts

-

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2,455,014

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NAC Semi

USA . 492,000 parts In-Stock

1+ parts

-

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$0.077

492,000

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$0.077

Component Sense

UK . 5,975 parts In-Stock

1+ parts

-

100+ parts

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5,975

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ComSIT Distribution GmbH

Germany . 15 parts In-Stock

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15

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Distributors (Availability)

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Ampacity Inc.

Singapore . 70,133 parts In-Stock

1+ parts

$0.071

100+ parts

-

1k+ parts

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10k+ parts

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70,133

$0.071

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Component Stockers USA

USA . 454,944 parts In-Stock

1+ parts

$0.440

100+ parts

$0.110

1k+ parts

$0.090

10k+ parts

$0.060

454,944

$0.440

$0.110

$0.090

$0.060

Native Components

USA . 296 parts In-Stock

1+ parts

$1.954

100+ parts

-

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296

$1.954

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Northwest PG Solutions

USA . 2,099 parts In-Stock

1+ parts

$2.149

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2,099

$2.149

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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90,000

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Perfect Parts

USA . 85,904 parts In-Stock

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85,904

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Kepictronics

USA . 33,589 parts In-Stock

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33,589

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Lixinc

USA . 16,195 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 13,274 parts In-Stock

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13,274

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Authorized Procurement Solutions

USA . 6,000 parts In-Stock

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6,000

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Eastek

USA . 3,000 parts In-Stock

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Assy Fe

Spain . 3,000 parts In-Stock

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GreenTree Electronics

Israel . 747 parts In-Stock

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747

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Overview

Experience superior performance and reliability with the DMG301NU-7 by Diodes Incorporated. As a leading manufacturer of small signal field effect transistors, Diodes Incorporated ensures top-notch quality and innovative design in every product. Ideal for switching applications, this N-channel transistor offers enhanced efficiency and durability. With its compact size and high power dissipation capability, the DMG301NU-7 provides exceptional value and benefits to customers looking for a reliable solution for their electronic needs. Trust Diodes Incorporated for cutting-edge technology that delivers unparalleled performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides durability and protection for the FET, ensuring reliable performance.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have better performance and efficiency compared to P-channel FETs, making this product a good choice for various applications.

Transistor Application: SWITCHING

Designed for switching applications, this FET is efficient in controlling the flow of current, making it suitable for use in electronic devices that require fast switching.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs are easy to control and have high input impedance, offering improved performance compared to depletion mode FETs.

Maximum Power Dissipation (Abs): 0.4 W

With a maximum power dissipation of 0.4 W, this FET can handle power efficiently and effectively, ensuring reliable operation.

Maximum Operating Temperature: 150 °C

The FET can operate at high temperatures up to 150°C, making it suitable for use in environments where elevated temperatures are common.

Minimum Operating Temperature: -55 °C

The FET can also operate at low temperatures down to -55°C, providing versatility for use in a wide range of temperature conditions.

Maximum Drain Current (ID): 0.26 A

With a maximum drain current of 0.26 A, this FET can handle moderate current loads, making it suitable for various electronic applications.

Maximum Drain-Source On Resistance: 4 ohm

The low drain-source on resistance of 4 ohms ensures minimal voltage drop and power loss, enhancing the efficiency of the FET.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMG301NU-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Minimum DS Breakdown Voltage:

25 V

Maximum Drain Current (ID):

.26 A

Maximum Drain-Source On Resistance:

4 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMG301NU-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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