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DMG302PU-7

Diodes Incorporated

DMG302PU-7 by Diodes Incorporated

DMG302PU-7 by Diodes Inc. is a P-CHANNEL FET for SWITCHING applications. Features include 25V DS Breakdown Voltage, 0.17A Drain Current, and 10 ohm On Resistance. With ENHANCEMENT MODE operation, it's ideal for small outline packages in automotive electronics (AEC-Q101).

Median Price

$0.124

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 8,309 parts In-Stock

1+ parts

$0.710

100+ parts

$0.284

1k+ parts

$0.193

10k+ parts

-

8,309

$0.710

$0.284

$0.193

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DigiKey

USA . 47,661 parts In-Stock

1+ parts

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$0.143

47,661

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$0.143

Verical

USA . 12,000 parts In-Stock

1+ parts

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$0.106

12,000

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$0.106

Avnet

USA . 3,000 parts In-Stock

1+ parts

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$0.079

3,000

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$0.079

Distributors (In-Stock)

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NAC Semi

USA . 18,000 parts In-Stock

1+ parts

-

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$0.250

18,000

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$0.250

Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

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Ampacity Inc.

Singapore . 79,782 parts In-Stock

1+ parts

$0.176

100+ parts

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79,782

$0.176

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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90,000

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Kepictronics

USA . 39,632 parts In-Stock

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39,632

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QUARKTWIN TECHNOLOGY LTD

USA . 6,391 parts In-Stock

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Eastek

USA . 3,000 parts In-Stock

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$0.130

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3,000

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$0.130

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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3,000

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Netroflash

USA . 50 parts In-Stock

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50

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Overview

Looking to enhance your electronic devices with top-notch performance and reliability? Look no further than the DMG302PU-7 by Diodes Incorporated. As a leading manufacturer in small signal field-effect transistors, Diodes Incorporated provides unmatched quality and innovation. This P-channel transistor with a built-in diode is perfect for switching applications, offering customers a seamless experience. With a wide operating temperature range and high breakdown voltage, this transistor ensures optimal performance in the most demanding conditions. Upgrade your electronics with the DMG302PU-7 today and experience the difference in quality and efficiency!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package provides durability and protection for the FET, making it suitable for various operating conditions.

Polarity or Channel Type: P-CHANNEL

P-channel FETs are known for their ease of use in circuits and offer good switching performance.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and provides reverse current protection.

Transistor Application: SWITCHING

Designed for switching applications, this FET offers fast response times and efficient performance.

Surface Mount: YES

Surface mount technology saves space on PCBs and allows for automated assembly processes.

Minimum DS Breakdown Voltage: 25 V

With a minimum breakdown voltage of 25V, this FET can handle a range of voltage levels.

Package Shape: RECTANGULAR

Rectangular package shape makes it easy to mount and integrates well into PCB layouts.

Terminal Form: GULL WING

Gull wing terminals provide mechanical strength and easy soldering during assembly.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for precise control of the transistor, enhancing overall performance.

No. of Terminals: 3

Three terminals provide the necessary connections for the FET, simplifying circuit design.

Maximum Power Dissipation (Abs): 0.45 W

With a maximum power dissipation of 0.45W, this FET can handle moderate power levels efficiently.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on PCBs and is ideal for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high reliability and performance for the FET.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this FET can withstand elevated temperature environments.

Transistor Element Material: SILICON

Silicon material provides excellent electrical properties and reliability for the transistor element.

Minimum Operating Temperature: -55 °C

Operational down to -55°C, this FET is suitable for a wide range of temperature conditions.

Terminal Finish: MATTE TIN

Matte tin finish on terminals ensures good solderability and reliable electrical connections.

Maximum Drain Current (ID): 0.17 A

With a maximum drain current of 0.17A, this FET can handle moderate current levels in circuits.

Maximum Drain-Source On Resistance: 10 ohm

Low on-resistance of 10 ohms ensures minimal power loss and efficient switching performance.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit connections and layout.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum reflow time of 30 seconds, this FET can withstand typical reflow soldering processes.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260°C ensures reliable solder joints and proper assembly.

Maximum Feedback Capacitance (Crss): 1.7 pF

Low feedback capacitance of 1.7pF minimizes signal distortion and interference in switching applications.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high reliability and quality for automotive applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMG302PU-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Minimum DS Breakdown Voltage:

25 V

Maximum Drain Current (ID):

.17 A

Maximum Drain-Source On Resistance:

10 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

1.7 pF

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMG302PU-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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