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AC847BWQ-7

Diodes Incorporated

AC847BWQ-7 by Diodes Incorporated

Diodes Incorporated AC847BWQ-7 is a NPN BJT transistor with hFE of 200, VCE of 45V, and fT of 300MHz. Ideal for switching applications, it features a small outline package with gull wing terminals for surface mount assembly.

Median Price

$0.132

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,673 parts In-Stock

1+ parts

$0.200

100+ parts

$0.074

1k+ parts

$0.047

10k+ parts

$0.033

2,673

$0.200

$0.074

$0.047

$0.033

Newark

USA . 1,490 parts In-Stock

1+ parts

$0.200

100+ parts

$0.074

1k+ parts

$0.047

10k+ parts

-

1,490

$0.200

$0.074

$0.047

-

Mouser Electronics

USA . 1,407 parts In-Stock

1+ parts

$0.200

100+ parts

$0.046

1k+ parts

$0.041

10k+ parts

$0.026

1,407

$0.200

$0.046

$0.041

$0.026

Verical

USA . 573,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.020

573,000

-

-

-

$0.020

Avnet

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

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-

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3,000

-

-

-

-

Farnell

UK . 1,515 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.034

10k+ parts

$0.028

1,515

-

-

$0.034

$0.028

Element14

Singapore . 1,515 parts In-Stock

1+ parts

-

100+ parts

$0.064

1k+ parts

$0.035

10k+ parts

$0.029

1,515

-

$0.064

$0.035

$0.029

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 480 parts In-Stock

1+ parts

$0.099

100+ parts

-

1k+ parts

-

10k+ parts

$0.095

480

$0.099

-

-

$0.095

Northwest PG Solutions

USA . 775 parts In-Stock

1+ parts

$0.109

100+ parts

-

1k+ parts

-

10k+ parts

$0.096

775

$0.109

-

-

$0.096

Continental Prestige Electronics

USA . 1,515 parts In-Stock

1+ parts

$0.229

100+ parts

$0.092

1k+ parts

$0.039

10k+ parts

$0.036

1,515

$0.229

$0.092

$0.039

$0.036

Eastek

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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3,000

-

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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2,000

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Overview

Unleash the power of innovation with the AC847BWQ-7 by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated is known for delivering top-quality Small Signal Bipolar Junction Transistors (BJT) that offer exceptional performance and reliability. Ideal for switching applications, this NPN transistor is designed with precision and expertise to meet the demands of modern technology. With its high DC current gain, low collector-emitter voltage, and fast transition frequency, the AC847BWQ-7 provides unmatched value and benefits to customers looking to optimize their electronic designs. Trust Diodes Incorporated to bring you cutting-edge solutions that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering high efficiency and performance.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easier to use in different electronic devices.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can efficiently turn on and off electrical signals, making it ideal for control circuits.

Surface Mount: YES

The surface mount capability allows for easy and efficient PCB assembly, saving space and enabling high-density designs.

Terminal Form: GULL WING

The gull wing terminal form provides mechanical stability and secure soldering connections, ensuring reliable performance.

No. of Terminals: 3

With three terminals, this transistor offers versatile connectivity options for different circuit configurations.

Minimum DC Current Gain (hFE): 200

The high minimum DC current gain ensures consistent and reliable amplification of signals, enhancing the transistor's performance.

Maximum Collector-Emitter Voltage: 45 V

The high maximum collector-emitter voltage makes this transistor suitable for applications requiring higher voltage handling capabilities.

Transistor Element Material: SILICON

Silicon transistors offer high performance, low noise, and thermal stability, making them a preferred choice for various electronic applications.

Maximum Collector Current (IC): 0.1 A

The maximum collector current rating of 0.1 A allows for efficient power handling and reliability in a range of circuit applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish ensures good solderability and electrical conductivity, enhancing the reliability and lifespan of the transistor.

Terminal Position: DUAL

Dual terminal positioning provides flexibility in circuit layout and connection options, allowing for customizable designs and integration.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C ensures robust soldering and reliability during assembly processes.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures the transistor meets automotive industry requirements for quality, reliability, and performance.

Nominal Transition Frequency (fT): 300 MHz

The high nominal transition frequency of 300 MHz indicates the transistor's ability to operate at high frequencies, making it suitable for fast switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) AC847BWQ-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

AC847BWQ-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

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