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AC847CWQ-7

Diodes Incorporated

AC847CWQ-7 by Diodes Incorporated

AC847CWQ-7 by Diodes Inc. is a NPN BJT transistor with hFE of 420, VCE of 45V, and fT of 300MHz. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mounting.

Median Price

$0.195

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 5,463 parts In-Stock

1+ parts

$0.180

100+ parts

$0.069

1k+ parts

$0.038

10k+ parts

$0.025

5,463

$0.180

$0.069

$0.038

$0.025

DigiKey

USA . 4,463 parts In-Stock

1+ parts

$0.210

100+ parts

$0.082

1k+ parts

$0.045

10k+ parts

-

4,463

$0.210

$0.082

$0.045

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 996 parts In-Stock

1+ parts

$0.118

100+ parts

-

1k+ parts

-

10k+ parts

$0.113

996

$0.118

-

-

$0.113

Northwest PG Solutions

USA . 1,864 parts In-Stock

1+ parts

$0.130

100+ parts

-

1k+ parts

-

10k+ parts

$0.114

1,864

$0.130

-

-

$0.114

Overview

Looking for a reliable solution for your switching applications? Look no further than the AC847CWQ-7 by Diodes Incorporated. With a focus on quality and innovation, Diodes Incorporated delivers top-notch Small Signal Bipolar Junction Transistors (BJT) like this one. This NPN transistor offers a maximum collector-emitter voltage of 45V and a minimum DC current gain of 420, making it ideal for various switching tasks. The AC847CWQ-7 is surface mountable, ensuring easy installation and space-saving benefits. Trust Diodes Incorporated to provide you with superior products that guarantee performance and efficiency in every application.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides robust protection and durability, making this transistor suitable for various environmental conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, providing high performance and reliability.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and low power consumption, making it ideal for efficient circuit designs.

Maximum Collector-Emitter Voltage: 45 V

With a high maximum collector-emitter voltage rating, this transistor can handle higher voltage levels, ensuring stable operation in various circuit configurations.

Maximum Collector Current (IC): 0.1 A

The high collector current rating of 0.1 A allows this transistor to handle moderate to high current levels, making it suitable for a wide range of applications.

Nominal Transition Frequency (fT): 300 MHz

The high transition frequency of 300 MHz indicates the speed at which this transistor can switch between on and off states, making it ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) AC847CWQ-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

420

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

AC847CWQ-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

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