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74LVT245BBT20-13

Diodes Incorporated

74LVT245BBT20-13 by Diodes Incorporated

BUS TRANSCEIVER; Temperature Grade: AUTOMOTIVE; Terminal Form: GULL WING; No. of Terminals: 20; Package Code: TSSOP; Package Shape: RECTANGULAR;

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 18,302 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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18,302

-

-

-

-

Velocity Electronics

USA . 150 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

150

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 132 parts In-Stock

1+ parts

$0.600

100+ parts

$0.370

1k+ parts

-

10k+ parts

-

132

$0.600

$0.370

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-

Microchip USA

USA . 1,698 parts In-Stock

1+ parts

$1.375

100+ parts

-

1k+ parts

-

10k+ parts

-

1,698

$1.375

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-

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Andel Nordic

Denmark . 3,389 parts In-Stock

1+ parts

$4.316

100+ parts

-

1k+ parts

$4.143

10k+ parts

$4.143

3,389

$4.316

-

$4.143

$4.143

AZTECH Wire

Italy . 773 parts In-Stock

1+ parts

$10.230

100+ parts

-

1k+ parts

-

10k+ parts

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773

$10.230

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-

-

Native Components

USA . 577 parts In-Stock

1+ parts

$21.670

100+ parts

-

1k+ parts

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10k+ parts

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577

$21.670

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Northwest PG Solutions

USA . 161 parts In-Stock

1+ parts

$23.837

100+ parts

$21.453

1k+ parts

-

10k+ parts

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161

$23.837

$21.453

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QUARKTWIN TECHNOLOGY LTD

USA . 25,284 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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25,284

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Technical Specifications

Bus Driver & Transceivers 74LVT245BBT20-13 attributes and parameters. Explore more Bus Driver & Transceivers devices from Diodes Incorporated

Specs

Additional Features:

WITH DIRECTION CONTROL

Family:

LVT

JESD-30 Code:

R-PDSO-G20

JESD-609 Code:

e3

Length:

6.5 mm

Logic IC Type:

No. of Bits:

8

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

20

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Propagation Delay (tpd):

5.5 ns

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

4.4 mm

Trade Compliance

74LVT245BBT20-13 Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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