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1SMB5914B-13

Diodes Incorporated

1SMB5914B-13 by Diodes Incorporated

1SMB5914B-13 by Diodes Inc. is a Zener diode with a nominal reference voltage of 3.6V, max power dissipation of 3W, and max operating temperature of 150°C. It is used in applications requiring precise voltage regulation such as power supplies and voltage references due to its unidirectional polarity and silicon diode element material.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 7,500 parts In-Stock

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7,500

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Vyrian

USA . 5,345 parts In-Stock

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5,345

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VNN

France . 4,074 parts In-Stock

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4,074

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 3,973 parts In-Stock

1+ parts

$0.185

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3,973

$0.185

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Corohmni

South Africa . 323 parts In-Stock

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$0.197

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323

$0.197

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Ampacity Inc.

Singapore . 1,279 parts In-Stock

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$3.010

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1,279

$3.010

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AZTECH Wire

Italy . 784 parts In-Stock

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$7.193

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784

$7.193

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Continental Prestige Electronics

USA . 3,194 parts In-Stock

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Bastille Electronics

Australia . 1,133 parts In-Stock

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Argo Parts USA

USA . 817 parts In-Stock

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Overview

Enhance your electronic designs with the 1SMB5914B-13 Zener Diode by Diodes Incorporated. Known for their high-quality components, Diodes Incorporated has crafted this diode to deliver reliable performance and precise voltage regulation. Ideal for a wide range of applications, this Zener diode offers customers exceptional value by providing stable and accurate voltage control in a compact, surface-mount package. Trust Diodes Incorporated to bring innovation and quality to your projects with the 1SMB5914B-13 Zener Diode.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package makes the diode lightweight and durable, suitable for a variety of applications.

Working Test Current: 104.2 mA

With a high working test current capacity, this zener diode can handle high current applications efficiently.

Surface Mount: YES

Being surface mountable makes installation of this diode easier and allows for more compact designs in electronic circuits.

Maximum Voltage Tolerance: 5 %

The low maximum voltage tolerance of 5% ensures accurate and stable voltage regulation in different operating conditions.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows this diode to be used in a wide range of temperature environments without any issues.

Maximum Power Dissipation: 3 W

With a maximum power dissipation of 3W, this zener diode can handle high power applications effectively while maintaining stability.

Diode Type: ZENER DIODE

Being a zener diode, this product is specifically designed for voltage regulation and protection applications, ensuring reliable performance.

Nominal Reference Voltage: 3.6 V

The 3.6V nominal reference voltage offers precise and stable voltage regulation, making this diode suitable for various electronic circuits.

Technology: ZENER

Utilizing zener technology ensures accurate voltage regulation and protection against voltage spikes, making this diode a reliable choice for electronic systems.

Technical Specifications

Zener Diodes 1SMB5914B-13 attributes and parameters. Explore more Zener Diodes devices from Diodes Incorporated

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

9 ohm

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

3 W

Nominal Reference Voltage:

3.6 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

104.2 mA

Trade Compliance

1SMB5914B-13 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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