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HMC603QS16E

Analog Devices

HMC603QS16E by Analog Devices

HMC603QS16E by Analog Devices is a RF/Microwave Attenuator with 15.5 dB Nominal Attenuation, 3 dB Max Insertion Loss, and 30 dBm Max Input Power (CW). It operates from -40 to 85 °C and has a frequency range of 700-3800 MHz. Ideal for variable attenuation in RF/microwave applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,189 parts In-Stock

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2,189

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Digiode

USA . 542 parts In-Stock

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542

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Distributors (Availability)

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Parana Technologies

USA . 99 parts In-Stock

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$2.558

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$2.379

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99

$2.558

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$2.379

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IDEA Electronic Components Group

UK . 714 parts In-Stock

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$2.751

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$2.613

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714

$2.751

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DigiPath Technology Company

USA . 51 parts In-Stock

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$4.292

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$4.120

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51

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$4.120

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One Stop Electronics

USA . 199 parts In-Stock

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$9.000

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199

$9.000

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AZTECH Wire

Italy . 688 parts In-Stock

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$14.579

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$14.579

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Semicontronic

India . 1,171 parts In-Stock

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$27.000

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$26.325

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$26.190

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Ampacity Inc.

Singapore . 1,142 parts In-Stock

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$37.000

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Component Stockers USA

USA . 790 parts In-Stock

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$99.990

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790

$99.990

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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Corphita

USA . 595 parts In-Stock

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595

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Overview

Unlock the full potential of your RF and microwave applications with the HMC603QS16E by Analog Devices. Known for their cutting-edge technology and top-notch quality, Analog Devices has crafted this variable attenuator to deliver unparalleled performance and reliability. Whether you're working on telecommunications, aerospace, or defense projects, this component is designed to meet your needs with its wide frequency range, high power handling capabilities, and precise attenuation control. Elevate your designs and achieve optimal results with the HMC603QS16E.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and protection for the attenuator, making it suitable for various applications and environments.

Maximum Input Power (CW): 30 dBm

With a high maximum input power handling capability, this attenuator can efficiently handle high power levels without degradation.

Nominal Attenuation: 15.5 dB

The attenuation level of 15.5 dB allows for precise control and adjustment of the signal strength as needed.

Power Supplies (V): 3/5

The option for power supplies of 3/5V provides flexibility in powering the device, making it compatible with various systems.

No. of Terminals: 16

With 16 terminals, this attenuator offers multiple connection points for enhanced connectivity and functionality.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85°C ensures the attenuator can operate efficiently even in elevated temperature conditions.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C allows the attenuator to function reliably in cold environments.

Terminal Finish: Matte Tin (Sn)

The matte tin finish provides good conductivity and corrosion resistance, ensuring optimal performance and longevity.

Maximum Insertion Loss: 3 dB

With a maximum insertion loss of 3 dB, this attenuator minimizes signal loss during transmission, maintaining signal integrity.

Technology: GAAS

The use of Gallium Arsenide (GaAs) technology offers high performance and reliability in RF/microwave applications.

RF or Microwave Device Type: VARIABLE ATTENUATOR

Being a variable attenuator, this product allows for flexible adjustment of signal strength, making it ideal for applications that require dynamic control.

Characteristic Impedance: 50 ohm

Having a characteristic impedance of 50 ohm ensures compatibility with standard RF systems and devices.

Minimum Operating Frequency: 700 MHz

The ability to operate at a minimum frequency of 700 MHz makes this attenuator suitable for a wide range of RF/microwave applications.

Mounting Feature: SURFACE MOUNT

The surface mount design allows for easy installation and integration into electronic circuits or systems.

Maximum Operating Frequency: 3800 MHz

Capable of operating at frequencies up to 3800 MHz, this attenuator is suitable for high-frequency RF/microwave applications.

Technical Specifications

RF/Microwave Attenuators HMC603QS16E attributes and parameters. Explore more RF/Microwave Attenuators devices from Analog Devices

Specs

Nominal Attenuation:

15.5 dB

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Maximum Input Power (CW):

30 dBm

Maximum Insertion Loss:

3 dB

JESD-609 Code:

e3

Mounting Feature:

No. of Terminals:

16

Maximum Operating Frequency:

3800 MHz

Minimum Operating Frequency:

700 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

SSOP16,.25

Power Supplies (V):

3/5

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Attenuators

Technology:

Terminal Finish:

Matte Tin (Sn)

Trade Compliance

HMC603QS16E RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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