Loading...

GAAS RF/Microwave Attenuators 32

RF/Microwave Attenuators
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Nominal Attenuation Characteristic Impedance Construction Maximum Input Power (CW) Maximum Insertion Loss JESD-609 Code Mounting Feature No. of Terminals Maximum Operating Frequency Minimum Operating Frequency Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Equivalence Code Power Supplies (V) RF or Microwave Device Type Screening Level Sub-Category Maximum Supply Current Technology Terminal Finish Maximum Voltage Standing Wave Ratio
AMMP-6630-BLKG by Broadcom

AMMP-6630-BLKG

Broadcom

VARIABLE ATTENUATOR; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Nominal Attenuation: 23.5 dB;

23.5 dB

50 ohm

COMPONENT

26.99 dBm

SURFACE MOUNT

8

30000 MHz

5000 MHz

PLASTIC/EPOXY

LCC8,.2SQ,28

1

VARIABLE ATTENUATOR

RF/Microwave Attenuators

GAAS

AMMP-6630-TR2G by Broadcom

AMMP-6630-TR2G

Broadcom

VARIABLE ATTENUATOR; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 0 MHz;

28 dB

50 ohm

COMPONENT

30 dBm

SURFACE MOUNT

8

40000 MHz

0 MHz

PLASTIC/EPOXY

LCC8,.2SQ,28

1

VARIABLE ATTENUATOR

RF/Microwave Attenuators

GAAS

AA104-73LF by Skyworks Solutions

AA104-73LF

Skyworks Solutions

AA104-73LF by Skyworks Solutions is a GAAS technology RF attenuator with 32 dB attenuation, 1.3 dB insertion loss, and 50 ohm impedance. It operates from 0.3 MHz to 2500 MHz, handles up to 30 dBm CW power, and has a VSWR of 2. Ideal for RF/microwave applications requiring precise signal control in components with surface mounting features.

32 dB

50 ohm

COMPONENT

30 dBm

1.3 dB

e3

SURFACE MOUNT

6

2500 MHz

.3 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSOP6,.11,37

3/5

VARIABLE ATTENUATOR

RF/Microwave Attenuators

GAAS

Matte Tin (Sn)

2

AA103-72LF by Skyworks Solutions

AA103-72LF

Skyworks Solutions

AA103-72LF by Skyworks Solutions is a RF/Microwave Attenuator with 10 dB Nominal Attenuation, 1.4 Max VSWR, and 0.7 dB Max Insertion Loss. It operates b/w 10 MHz to 2500 MHz, suitable for variable attenuation in RF systems. With a max input power of 30 dBm, it is ideal for applications requiring precise signal control.

10 dB

50 ohm

COMPONENT

30 dBm

.7 dB

e3

SURFACE MOUNT

5

2500 MHz

10 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSOP5/6,.11,37

3/5

VARIABLE ATTENUATOR

RF/Microwave Attenuators

GAAS

Tin (Sn)

1.4

AMMC-6630-W10 by Broadcom

AMMC-6630-W10

Broadcom

VARIABLE ATTENUATOR; Technology: GAAS; Maximum Operating Frequency: 45000 MHz; Nominal Attenuation: 20 dB; Package Equivalence Code: DIE OR CHIP; Power Supplies (V): 1;

20 dB

50 ohm

MODULE

16.99 dBm

45000 MHz

5000 MHz

DIE OR CHIP

1

VARIABLE ATTENUATOR

RF/Microwave Attenuators

GAAS

AMMC-6630-W50 by Broadcom

AMMC-6630-W50

Broadcom

VARIABLE ATTENUATOR; Technology: GAAS; Nominal Attenuation: 20 dB; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 45000 MHz; Power Supplies (V): 1;

20 dB

50 ohm

MODULE

16.99 dBm

45000 MHz

5000 MHz

DIE OR CHIP

1

VARIABLE ATTENUATOR

RF/Microwave Attenuators

GAAS

HMC306AMS10E by Analog Devices

HMC306AMS10E

Analog Devices

Analog Devices' HMC306AMS10E is a GAAS technology RF attenuator with 15.5 dB attenuation, 2.7 dB insertion loss, and 26.99 dBm CW input power handling. Ideal for applications requiring variable attenuation in the frequency range of 700 MHz to 3800 MHz, such as RF and microwave systems.

15.5 dB

50 ohm

COMPONENT

26.99 dBm

2.7 dB

e3

3800 MHz

700 MHz

85 Cel

-40 Cel

VARIABLE ATTENUATOR

GAAS

MATTE TIN

HMC306AMS10 by Analog Devices

HMC306AMS10

Analog Devices

HMC306AMS10 by Analog Devices is a GAAS technology RF attenuator with 15.5 dB attenuation and 2.7 dB insertion loss, suitable for frequencies ranging from 700 MHz to 3800 MHz. It can handle up to 26.99 dBm CW input power and operates in temperatures from -40 °C to 85°C, making it ideal for RF/microwave applications requiring precise signal control.

15.5 dB

50 ohm

COMPONENT

26.99 dBm

2.7 dB

e0

3800 MHz

700 MHz

85 Cel

-40 Cel

VARIABLE ATTENUATOR

GAAS

Tin/Lead (Sn/Pb)

HMC539ALP3E by Analog Devices

HMC539ALP3E

Analog Devices

Analog Devices' HMC539ALP3E is a RF/Microwave Attenuator with 7.75 dB attenuation and 1.7 dB insertion loss, suitable for applications requiring variable attenuation in the frequency range of 0-4000 MHz. This component has a max input power of 29 dBm, operates at temperatures from -40 to 85°C, and features a GaAs technology construction with matte tin terminal finish.

7.75 dB

50 ohm

COMPONENT

29 dBm

1.7 dB

e3

SURFACE MOUNT

16

4000 MHz

0 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

3/5

VARIABLE ATTENUATOR

GAAS

MATTE TIN

HMC424A by Analog Devices

HMC424A

Analog Devices

HMC424A by Analog Devices is a RF/Microwave Attenuator with 31.5 dB Nominal Attenuation, 1.67 Max VSWR, and 25 dBm Max Input Power (CW). It operates b/w -40 to 85 °C and has a frequency range of 100 MHz to 13 GHz. Ideal for variable attenuation in RF/microwave applications.

31.5 dB

50 ohm

COMPONENT

25 dBm

4.6 dB

SURFACE MOUNT

9

13000 MHz

100 MHz

85 Cel

-40 Cel

DIE OR CHIP

-5

VARIABLE ATTENUATOR

5 mA

GAAS

1.67

HMC346ALC3B by Analog Devices

HMC346ALC3B

Analog Devices

Analog Devices' HMC346ALC3B is a RF attenuator with 24 dB attenuation, 18 dBm input power, and 4 dB insertion loss. Ideal for variable attenuation in RF/microwave applications from 0 to 18000 MHz. Built with GaAs technology, it operates b/w -40°C to +85°C and has a ceramic package body.

24 dB

50 ohm

COMPONENT

18 dBm

4 dB

e4

SURFACE MOUNT

12

18000 MHz

0 MHz

85 Cel

-40 Cel

CERAMIC

LCC12,.12SQ,20

VARIABLE ATTENUATOR

GAAS

GOLD OVER NICKEL

HMC346ALP3E by Analog Devices

HMC346ALP3E

Analog Devices

Analog Devices' HMC346ALP3E is a RF attenuator with 30 dB attenuation, 18 dBm input power, and 1.92 VSWR. Ideal for variable attenuation in RF/microwave applications up to 14 GHz, it features GaAs technology and operates b/w -40°C to 85°C.

30 dB

50 ohm

COMPONENT

18 dBm

3.2 dB

SURFACE MOUNT

16

14000 MHz

0 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

VARIABLE ATTENUATOR

GAAS

1.92

HMC346AMS8GE by Analog Devices

HMC346AMS8GE

Analog Devices

Analog Devices' HMC346AMS8GE is a GAAS technology RF attenuator with 28 dB attenuation, 3.1 dB insertion loss, and 18 dBm CW input power. Ideal for RF/microwave applications, it operates from -40 to 85°C, has a characteristic impedance of 50 ohms, and comes in an 8-terminal surface mount package.

28 dB

50 ohm

COMPONENT

18 dBm

3.1 dB

e3

SURFACE MOUNT

8

85 MHz

-40 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP8,.19

VARIABLE ATTENUATOR

GAAS

MATTE TIN

HMC539ALP3 by Analog Devices

HMC539ALP3

Analog Devices

HMC539ALP3 by Analog Devices is a RF/Microwave Attenuator with 7.75 dB Nominal Attenuation and 1.7 dB Max Insertion Loss. It operates from -40 to 85 °C, has a max input power of 29 dBm, and supports frequencies up to 4000 MHz. Ideal for variable attenuation in RF/microwave circuits, it features GAAS technology and surface mounting for easy integration.

7.75 dB

50 ohm

COMPONENT

29 dBm

1.7 dB

e0

SURFACE MOUNT

16

4000 MHz

0 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

3/5

VARIABLE ATTENUATOR

GAAS

TIN LEAD

HMC812ALC4 by Analog Devices

HMC812ALC4

Analog Devices

Analog Devices' HMC812ALC4 is a RF/Microwave Attenuator with 35 dB Nominal Attenuation, 30 dBm Max Input Power (CW), and 50 ohm Characteristic Impedance. This GAAS technology-based variable attenuator operates b/w 5-30 GHz, ideal for applications requiring precise signal attenuation in high-frequency circuits.

35 dB

50 ohm

COMPONENT

30 dBm

e4

SURFACE MOUNT

24

30000 MHz

5000 MHz

85 Cel

-40 Cel

CERAMIC

LCC24,.16SQ,20

VARIABLE ATTENUATOR

GAAS

GOLD OVER NICKEL

HMC424AG16 by Analog Devices

HMC424AG16

Analog Devices

Analog Devices' HMC424AG16 is a GAAS technology RF attenuator with 31.5 dB attenuation and 3.6 dB insertion loss at 3000 MHz. It operates from -40 to 85 °C, handles up to 24.5 dBm CW power, and has a characteristic impedance of 50 ohm. Ideal for RF/microwave applications requiring precise signal control in compact designs.

31.5 dB

50 ohm

COMPONENT

24.5 dBm

3.6 dB

SURFACE MOUNT

16

3000 MHz

85 Cel

-40 Cel

CERAMIC

QFP16,.45SQ,30

-5

VARIABLE ATTENUATOR

GAAS

HMC424ALH5TR by Analog Devices

HMC424ALH5TR

Analog Devices

HMC424ALH5TR by Analog Devices is a RF/Microwave Attenuator with 31.5 dB Nominal Attenuation and 25 dBm Max Input Power. It operates from -40 to 85 °C, has a max insertion loss of 5.2 dB, and covers frequencies from 0 to 13000 MHz. Ideal for variable attenuation in RF/microwave applications.

31.5 dB

50 ohm

COMPONENT

25 dBm

5.2 dB

SURFACE MOUNT

12

13000 MHz

0 MHz

85 Cel

-40 Cel

CERAMIC

LCC12,.2SQ

-5

VARIABLE ATTENUATOR

GAAS

HMC425ALP3E by Analog Devices

HMC425ALP3E

Analog Devices

HMC425ALP3E by Analog Devices is a RF/Microwave Attenuator with 31.5 dB Nominal Attenuation, 30 dBm Max Input Power (CW), and 4.3 dB Max Insertion Loss. It operates b/w -40 to 85°C, has a characteristic impedance of 50 ohm, and supports frequencies from 2200 MHz to 8000 MHz. Ideal for variable attenuation in RF/microwave applications with surface mounting feature.

31.5 dB

50 ohm

COMPONENT

30 dBm

4.3 dB

e3

SURFACE MOUNT

16

8000 MHz

2200 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

5

VARIABLE ATTENUATOR

GAAS

MATTE TIN

HMC939ALP4E by Analog Devices

HMC939ALP4E

Analog Devices

HMC939ALP4E by Analog Devices is a RF/Microwave Attenuator with 31 dB Nominal Attenuation, 27 dBm Max Input Power (CW), and 8 dB Max Insertion Loss. It operates from -40 to 85°C, has a characteristic impedance of 50 ohm, and is ideal for variable attenuation in applications up to 33 GHz.

31 dB

50 ohm

COMPONENT

27 dBm

8 dB

e3

SURFACE MOUNT

24

33000 MHz

100 MHz

85 Cel

-40 Cel

LCC24,.16SQ,20

+-5

VARIABLE ATTENUATOR

6.5 mA

GAAS

MATTE TIN

HMC939A by Analog Devices

HMC939A

Analog Devices

HMC939A by Analog Devices is a RF/Microwave Attenuator with 31 dB Nominal Attenuation, 7.8 dB Max Insertion Loss, and operates from 100 MHz to 40 GHz. It features GAAS technology, +-5V power supplies, and can handle up to 27 dBm CW input power. Ideal for variable attenuation in RF/microwave systems with a characteristic impedance of 50 ohms.

CMOS COMPATIBLE

31 dB

50 ohm

COMPONENT

27 dBm

7.8 dB

SURFACE MOUNT

40000 MHz

100 MHz

85 Cel

-40 Cel

DIE OR CHIP

+-5

VARIABLE ATTENUATOR

7 mA

GAAS

HMC985ALP4KE by Analog Devices

HMC985ALP4KE

Analog Devices

Analog Devices' HMC985ALP4KE is a GAAS technology RF attenuator with 42 dB attenuation, 4 dB insertion loss, and 30 dBm CW input power. It operates from -40 to 85°C, covering frequencies from 10 to 40 GHz. Ideal for RF/microwave applications requiring precise signal control in a surface-mount package.

42 dB

50 ohm

COMPONENT

30 dBm

4 dB

SURFACE MOUNT

24

40000 MHz

10000 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC24,.16SQ,20

-4

VARIABLE ATTENUATOR

GAAS

HMC424ALH5 by Analog Devices

HMC424ALH5

Analog Devices

Analog Devices' HMC424ALH5 is a ceramic RF attenuator with 31.5 dB attenuation and 25 dBm CW input power. Ideal for variable attenuation in RF/microwave applications up to 13 GHz, it operates from -40°C to 85°C with a max insertion loss of 5.2 dB.

31.5 dB

50 ohm

COMPONENT

25 dBm

5.2 dB

SURFACE MOUNT

12

13000 MHz

0 MHz

85 Cel

-40 Cel

CERAMIC

LCC12,.2SQ

-5

VARIABLE ATTENUATOR

GAAS

HMC941A by Analog Devices

HMC941A

Analog Devices

HMC941A by Analog Devices is a RF/Microwave Attenuator with 15.5 dB Nominal Attenuation, 27 dBm Max Input Power (CW), and 5.1 dB Max Insertion Loss. It operates b/w -55 to 85 °C and supports frequencies from 100 MHz to 30 GHz. Ideal for variable attenuation in RF/microwave applications with a characteristic impedance of 50 ohms.

15.5 dB

50 ohm

COMPONENT

27 dBm

5.1 dB

9

30000 MHz

100 MHz

85 Cel

-55 Cel

DIE OR CHIP

+-5

VARIABLE ATTENUATOR

7 mA

GAAS

HMC985A by Analog Devices

HMC985A

Analog Devices

Analog Devices' HMC985A is a GAAS-based RF attenuator with 40 dB nominal attenuation, 30 dBm CW input power, and 4 dB max insertion loss. Ideal for applications requiring variable attenuation in the frequency range of 20-50 GHz.

40 dB

50 ohm

COMPONENT

30 dBm

4 dB

SURFACE MOUNT

50000 MHz

20000 MHz

85 Cel

-40 Cel

DIE OR CHIP

VARIABLE ATTENUATOR

GAAS

HMC1019ALP4E by Analog Devices

HMC1019ALP4E

Analog Devices

HMC1019ALP4E by Analog Devices is a RF/Microwave Attenuator with 15.5 dB Nominal Attenuation, 27 dBm Max Input Power (CW), and 6.5 dB Max Insertion Loss. It operates from -40 to 85 °C, has a characteristic impedance of 50 ohm, and is ideal for variable attenuation in RF/microwave applications up to 30 GHz.

CMOS COMPATIBLE

15.5 dB

50 ohm

COMPONENT

27 dBm

6.5 dB

e3

SURFACE MOUNT

24

30000 MHz

100 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC24,.16SQ,20

+-5

VARIABLE ATTENUATOR

6.5 mA

GAAS

MATTE TIN

HMC939ALP4ETR by Analog Devices

HMC939ALP4ETR

Analog Devices

HMC939ALP4ETR by Analog Devices is a RF/Microwave Attenuator with 31 dB Nominal Attenuation, 27 dBm Max Input Power (CW), and 8 dB Max Insertion Loss. It operates b/w -40 to 85°C, has a GAAS Technology, and supports frequencies from 100 MHz to 33 GHz. Ideal for variable attenuation in RF/microwave applications.

31 dB

50 ohm

COMPONENT

27 dBm

8 dB

SURFACE MOUNT

24

33000 MHz

100 MHz

85 Cel

-40 Cel

LCC24,.16SQ,20

+-5

VARIABLE ATTENUATOR

6.5 mA

GAAS

HMC624ACPSZ-EP-PT by Analog Devices

HMC624ACPSZ-EP-PT

Analog Devices

Analog Devices' HMC624ACPSZ-EP-PT is a RF/Microwave Attenuator with 31.5 dB Nominal Attenuation, 25 dBm Max Input Power, and 3.8 dB Max Insertion Loss. It operates from 100 MHz to 6000 MHz, making it ideal for variable attenuation in RF/microwave systems requiring precise power control.

31.5 dB

COMPONENT

25 dBm

3.8 dB

SURFACE MOUNT

24

6000 MHz

100 MHz

105 Cel

-55 Cel

PLASTIC/EPOXY

LCC24,.16SQ,20

3/5

VARIABLE ATTENUATOR

GAAS

HMC624ACPSZ-EP-RL7 by Analog Devices

HMC624ACPSZ-EP-RL7

Analog Devices

Analog Devices' HMC624ACPSZ-EP-RL7 is a RF/Microwave Attenuator with 31.5 dB Nominal Attenuation, 3.8 dB Max Insertion Loss, and 25 dBm Max Input Power (CW). It operates from -55 °C to 105°C, suitable for applications requiring variable attenuation in the frequency range of 100 MHz to 6 GHz.

31.5 dB

COMPONENT

25 dBm

3.8 dB

SURFACE MOUNT

24

6000 MHz

100 MHz

105 Cel

-55 Cel

PLASTIC/EPOXY

LCC24,.16SQ,20

3/5

VARIABLE ATTENUATOR

GAAS

HMC425ALP3ETR by Analog Devices

HMC425ALP3ETR

Analog Devices

Analog Devices' HMC425ALP3ETR is a RF attenuator with 31.5 dB attenuation, 27 dBm CW input power, and 4.7 dB insertion loss. Ideal for variable attenuation in RF/microwave applications from 2200 MHz to 8000 MHz, it features GAAS technology and operates b/w -40 °C to 85°C.

31.5 dB

50 ohm

COMPONENT

27 dBm

4.7 dB

e3

SURFACE MOUNT

16

8000 MHz

2200 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

5

VARIABLE ATTENUATOR

GAAS

Matte Tin (Sn) - annealed

HMC346ALC3BTR by Analog Devices

HMC346ALC3BTR

Analog Devices

Analog Devices' HMC346ALC3BTR is a RF/Microwave Attenuator with 24 dB Nominal Attenuation, 18 dBm Max Input Power, and 4 dB Max Insertion Loss. This variable attenuator operates from -40°C to 85°C, ideal for applications requiring precise signal control in the frequency range of 0-18000 MHz.

24 dB

50 ohm

COMPONENT

18 dBm

4 dB

e4

SURFACE MOUNT

12

18000 MHz

0 MHz

85 Cel

-40 Cel

CERAMIC

LCC12,.12SQ,20

VARIABLE ATTENUATOR

GAAS

GOLD OVER NICKEL

HMC424A-SX by Analog Devices

HMC424A-SX

Analog Devices

Analog Devices' HMC424A-SX is a RF/Microwave Attenuator with 31.5 dB attenuation, 1.67 VSWR, and 25 dBm CW input power. Ideal for variable attenuation in RF/microwave circuits from 100 MHz to 13 GHz. Suitable for surface mount applications with -40 °C to 85°C operating temperature range.

31.5 dB

50 ohm

COMPONENT

25 dBm

4.6 dB

SURFACE MOUNT

9

13000 MHz

100 MHz

85 Cel

-40 Cel

DIE OR CHIP

-5

VARIABLE ATTENUATOR

5 mA

GAAS

1.67

HMC346ALP3ETR by Analog Devices

HMC346ALP3ETR

Analog Devices

Analog Devices' HMC346ALP3ETR is a RF attenuator with 30 dB attenuation, 18 dBm CW input power, and 1.92 VSWR. Ideal for variable attenuation in RF/microwave applications up to 14 GHz, it features GaAs technology, surface mounting, and operates b/w -40 °C to 85°C.

30 dB

50 ohm

COMPONENT

18 dBm

3.2 dB

e3

SURFACE MOUNT

16

14000 MHz

0 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

VARIABLE ATTENUATOR

GAAS

Matte Tin (Sn) - annealed

1.92