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HMC346MS8GE

Analog Devices

HMC346MS8GE by Analog Devices

Analog Devices' HMC346MS8GE is a GAAS technology RF attenuator with 32 dB attenuation, 2.5 dB insertion loss, and 18.06 dBm CW input power handling. Ideal for variable attenuation in RF/microwave applications from 0-8000 MHz, it features a surface mount package with matte tin terminals.

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Chip Stock

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Cogito LLC

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Prism Electronics

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Parana Technologies

USA . 3,595 parts In-Stock

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IDEA Electronic Components Group

UK . 5 parts In-Stock

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DigiPath Technology Company

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Semicontronic

India . 50 parts In-Stock

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Overview

Unleash the power of Analog Devices with the HMC346MS8GE RF/Microwave Attenuator! Renowned for their superior quality and innovative technology, Analog Devices brings you a cutting-edge solution for your RF needs. This variable attenuator offers a nominal attenuation of 32 dB, ensuring optimal signal control without compromising on performance. With a maximum input power of 18.06 dBm and a wide operating frequency range from 0 MHz to 8000 MHz, this component is a versatile choice for various applications. Trust Analog Devices to deliver unmatched value and reliability, making the HMC346MS8GE a must-have for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the internal components, making the attenuator suitable for various operating conditions.

Maximum Input Power (CW): 18.06 dBm

With a high maximum input power, this attenuator can handle strong signals without distortion, ensuring reliable performance.

Nominal Attenuation: 32 dB

The 32 dB attenuation allows for precise signal control and adjustment, making it ideal for applications requiring specific signal strength.

Construction: COMPONENT

Being a component-level product, this attenuator can be easily integrated into larger systems or circuits for signal attenuation purposes.

No. of Terminals: 8

The 8 terminals offer flexibility in circuit connections and enable the attenuator to be effectively used in various configurations.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature allows the attenuator to function reliably in environments with elevated temperatures.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures the attenuator can work efficiently in cold environments without performance degradation.

Terminal Finish: Matte Tin (Sn)

The matte tin finish provides good conductivity and corrosion resistance, enhancing the overall durability and reliability of the attenuator.

Maximum Insertion Loss: 2.5 dB

The low insertion loss ensures minimal signal power loss during attenuation, maintaining signal integrity and quality.

Technology: GAAS

The Gallium Arsenide technology used in this attenuator offers excellent RF performance characteristics, ensuring high-quality signal attenuation.

RF or Microwave Device Type: VARIABLE ATTENUATOR

Being a variable attenuator, this product allows for real-time signal adjustment and control, making it versatile for various RF/Microwave applications.

Characteristic Impedance: 50 ohm

The 50 ohm impedance matches standard RF systems, ensuring optimal signal transfer and compatibility with other RF components.

Minimum Operating Frequency: 0 MHz

The ability to operate at 0 MHz makes this attenuator suitable for a wide range of frequency applications, from DC to high-frequency signals.

Mounting Feature: SURFACE MOUNT

The surface mount design allows for easy and secure installation on circuit boards, saving space and simplifying the manufacturing process.

Maximum Operating Frequency: 8000 MHz

With a high maximum operating frequency, this attenuator can handle a wide range of RF and microwave signals, making it versatile for different frequency bands.

Technical Specifications

RF/Microwave Attenuators HMC346MS8GE attributes and parameters. Explore more RF/Microwave Attenuators devices from Analog Devices

Specs

Nominal Attenuation:

32 dB

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Maximum Input Power (CW):

18.06 dBm

Maximum Insertion Loss:

2.5 dB

JESD-609 Code:

e3

Mounting Feature:

No. of Terminals:

8

Maximum Operating Frequency:

8000 MHz

Minimum Operating Frequency:

0 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

TSSOP8,.19

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Attenuators

Technology:

Terminal Finish:

Matte Tin (Sn)

Trade Compliance

HMC346MS8GE RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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