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HMC307QS16G

Analog Devices

HMC307QS16G by Analog Devices

Analog Devices' HMC307QS16G is a RF/Microwave Attenuator with 31 dB Nominal Attenuation, 2.7 dB Max Insertion Loss, and -40 to 85°C Operating Temp Range. It's a Variable Attenuator for applications requiring precise signal control in the frequency range of 0-4000 MHz.

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Lifecycle Status

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9

In-Stock Inventory

1k+

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Vyrian

USA . 8,078 parts In-Stock

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Digiode

USA . 973 parts In-Stock

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North Shore Components

USA . 38 parts In-Stock

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Odintec Ltd.

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Speed Components Ltd

Israel . 15 parts In-Stock

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Prism Electronics

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NAC Semi

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Cogito LLC

Ukraine . 5 parts In-Stock

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QIE Inc.

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Parana Technologies

USA . 4,162 parts In-Stock

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$1.738

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$1.616

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IDEA Electronic Components Group

UK . 1,616 parts In-Stock

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$1.869

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$1.776

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DigiPath Technology Company

USA . 2,085 parts In-Stock

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$2.916

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$2.799

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Semicontronic

India . 1,243 parts In-Stock

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$5.850

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AZTECH Wire

Italy . 703 parts In-Stock

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One Stop Electronics

USA . 808 parts In-Stock

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Metaverse IC Inc.

Canada . 5,880 parts In-Stock

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Kepictronics

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Corphita

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Overview

Enhance your RF and microwave applications with the HMC307QS16G by Analog Devices. As a leading manufacturer in the industry, Analog Devices ensures top-notch quality and reliability in their products. The HMC307QS16G is a versatile variable attenuator that offers precise control over signal levels, allowing for optimal performance in a variety of settings. With a wide operating frequency range and low insertion loss, this component provides exceptional value and flexibility for your projects. Upgrade your systems today with the HMC307QS16G and experience enhanced performance like never before.

Feature Benefit Bullets

Package Body Material - PLASTIC/EPOXY

Plastic/epoxy material provides durability and reliability for long-term use.

Maximum Input Power (CW) - 26.02 dBm

High maximum input power handling capability ensures the attenuator can handle strong signals without distortion.

Nominal Attenuation - 31 dB

Provides a significant level of signal attenuation, making it suitable for various applications that require signal reduction.

Construction - COMPONENT

Component construction offers precision and reliability in signal attenuation.

Power Supplies (V) - -5

Low power supply voltage requirement makes it energy-efficient and suitable for various power sources.

No. of Terminals - 16

Multiple terminals allow for versatile connectivity options and flexibility in application.

Maximum Operating Temperature - 85 °C

Wide operating temperature range ensures performance in various environments.

Minimum Operating Temperature - -40 °C

Can operate in extreme cold conditions without performance degradation.

Terminal Finish - Tin/Lead (Sn/Pb)

Tin/lead terminal finish provides good electrical conductivity and solderability for easy installation.

Maximum Insertion Loss - 2.7 dB

Low insertion loss ensures minimal signal degradation during attenuation.

Technology - GAAS

Gallium arsenide technology offers high-performance characteristics in RF/microwave applications.

Maximum Supply Current - 6 mA

Low supply current requirement for efficient power consumption.

RF or Microwave Device Type - VARIABLE ATTENUATOR

Variable attenuator allows for dynamic adjustment of signal levels for precise control.

Characteristic Impedance - 50 ohm

Matches standard impedance levels for seamless integration with other RF components.

Minimum Operating Frequency - 0 MHz

Can attenuate signals at the lowest frequencies for a wide range of applications.

Mounting Feature - SURFACE MOUNT

Surface mount design for easy installation on PCBs or mounting surfaces.

Maximum Operating Frequency - 4000 MHz

Supports high-frequency applications up to 4 GHz for versatile use cases.

Technical Specifications

RF/Microwave Attenuators HMC307QS16G attributes and parameters. Explore more RF/Microwave Attenuators devices from Analog Devices

Specs

Nominal Attenuation:

31 dB

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Maximum Input Power (CW):

26.02 dBm

Maximum Insertion Loss:

2.7 dB

JESD-609 Code:

e0

Mounting Feature:

No. of Terminals:

16

Maximum Operating Frequency:

4000 MHz

Minimum Operating Frequency:

0 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

SSOP16,.25

Power Supplies (V):

-5

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Attenuators

Maximum Supply Current:

6 mA

Technology:

Terminal Finish:

Tin/Lead (Sn/Pb)

Trade Compliance

HMC307QS16G RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5985-01-562-7624, 5985015627624

NIIN

015627624

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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