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HMC424LP3E

Analog Devices

HMC424LP3E by Analog Devices

Analog Devices' HMC424LP3E is a GAAS technology RF attenuator with 31.5 dB attenuation and 4.6 dB insertion loss, suitable for applications requiring variable attenuation in the frequency range of 0-13000 MHz. This component operates at temperatures from -55 to 85°C, with a max input power of 25.05 dBm and a supply current of up to 5 mA.

Median Price

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Lifecycle Status

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7

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1k+

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Vyrian

USA . 6,676 parts In-Stock

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Chip Stock

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925

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Digiode

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641

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LIBRA Elektronik GmbH

Germany . 3 parts In-Stock

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Speed Components Ltd

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PC Components Company LLC

USA . 1 parts In-Stock

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Bristol Electronics

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Parana Technologies

USA . 4,103 parts In-Stock

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$1.123

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$1.045

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$1.123

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IDEA Electronic Components Group

UK . 896 parts In-Stock

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$1.208

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$1.148

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Advanced Electronics

New Zealand . 200 parts In-Stock

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$1.702

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$1.685

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$1.617

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DigiPath Technology Company

USA . 947 parts In-Stock

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$1.884

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$1.809

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AZTECH Wire

Italy . 700 parts In-Stock

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$10.695

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Semicontronic

India . 1,307 parts In-Stock

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$20.475

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One Stop Electronics

USA . 592 parts In-Stock

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Authorized Procurement Solutions

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Perfect Parts

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Glotronic Ltd.

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Metaverse IC Inc.

Canada . 598 parts In-Stock

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Corphita

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Speed Components Ltd (Excess)

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Overview

Elevate your RF/Microwave systems with the HMC424LP3E by Analog Devices, a cutting-edge variable attenuator designed for optimal performance. With a nominal attenuation of 31.5 dB and a maximum input power of 25.05 dBm, this component offers unparalleled quality and reliability. Ideal for a wide range of applications, this plastic/epoxy-packaged attenuator delivers exceptional value and benefits to customers seeking precision and efficiency in their designs. Trust Analog Devices, a leading manufacturer in the industry, to provide you with top-notch solutions for your RF/Microwave needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the attenuator.

Maximum Input Power (CW): 25.05 dBm

Can handle high input power levels without distortion, making it suitable for a wide range of applications.

Nominal Attenuation: 31.5 dB

Offers significant reduction in signal strength, allowing for precise control over output power levels.

Construction: COMPONENT

Designed with individual components for easy maintenance and repair if necessary.

Power Supplies (V): -5

Operates on low voltage, making it energy-efficient and cost-effective.

No. of Terminals: 16

Provides multiple connection points for diverse system integration options.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures without compromising performance, ensuring reliability in various operating environments.

Minimum Operating Temperature: -55 °C

Capable of functioning in extremely cold conditions, expanding the range of applications where the attenuator can be used.

Terminal Finish: Matte Tin (Sn)

Ensures good connectivity and resistance to corrosion, maintaining signal integrity over time.

Maximum Insertion Loss: 4.6 dB

Minimizes signal loss during attenuation, preserving the quality of the output signal.

Technology: GAAS

Utilizes Gallium Arsenide technology for high-performance and reliability in RF/microwave applications.

Maximum Supply Current: 5 mA

Requires low supply current, contributing to overall efficiency and reducing power consumption.

RF or Microwave Device Type: VARIABLE ATTENUATOR

Allows for adjustable signal attenuation levels, offering flexibility in signal control and system customization.

Characteristic Impedance: 50 ohm

Matches the impedance of common RF systems, ensuring optimal signal transfer and minimal reflections.

Minimum Operating Frequency: 0 MHz

Supports a wide range of operating frequencies, making it versatile for various RF/microwave applications.

Mounting Feature: SURFACE MOUNT

Easily mounted on PCBs or other surfaces for convenient integration into electronic systems.

Maximum Operating Frequency: 13000 MHz

Covers a broad frequency range, suitable for high-frequency RF/microwave applications.

Technical Specifications

RF/Microwave Attenuators HMC424LP3E attributes and parameters. Explore more RF/Microwave Attenuators devices from Analog Devices

Specs

Nominal Attenuation:

31.5 dB

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Maximum Input Power (CW):

25.05 dBm

Maximum Insertion Loss:

4.6 dB

JESD-609 Code:

e3

Mounting Feature:

No. of Terminals:

16

Maximum Operating Frequency:

13000 MHz

Minimum Operating Frequency:

0 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

Package Equivalence Code:

LCC16,.12SQ,20

Power Supplies (V):

-5

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Attenuators

Maximum Supply Current:

5 mA

Technology:

Terminal Finish:

Matte Tin (Sn)

Trade Compliance

HMC424LP3E RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5985-01-641-5404, 5985016415404

NIIN

016415404

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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