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HMC307QS16GETR

Analog Devices

HMC307QS16GETR by Analog Devices

Analog Devices' HMC307QS16GETR is a RF attenuator with 31 dB attenuation, 2.7 dB insertion loss, and 4000 MHz max frequency. Ideal for RF/Microwave applications, it operates from -40 to 85 °C and has a GaAs technology construction for precise signal control.

Median Price

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Lifecycle Status

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4

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1k+

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Vyrian

USA . 7,673 parts In-Stock

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Digiode

USA . 581 parts In-Stock

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Chip Stock

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Velocity Electronics

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Parana Technologies

USA . 1,180 parts In-Stock

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$1.932

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$1.796

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IDEA Electronic Components Group

UK . 515 parts In-Stock

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$2.077

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$1.973

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DigiPath Technology Company

USA . 311 parts In-Stock

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$3.240

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$3.111

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Semicontronic

India . 1,289 parts In-Stock

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$7.000

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$6.825

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$6.790

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AZTECH Wire

Italy . 501 parts In-Stock

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$9.392

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One Stop Electronics

USA . 1,014 parts In-Stock

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$25.000

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Perfect Parts

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RC Electronics

USA . 500 parts In-Stock

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Corphita

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Overview

Enhance your RF/Microwave system with the HMC307QS16GETR from Analog Devices, a top-of-the-line variable attenuator offering 31 dB of nominal attenuation and a maximum insertion loss of 2.7 dB. Constructed with cutting-edge GaAs technology, this component delivers unparalleled performance and reliability for applications requiring precise signal control. With a wide operating temperature range and surface mount feature, this attenuator is ideal for demanding environments where quality and consistency are key. Trust Analog Devices for exceptional products that elevate your systems to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy body material provides durability and protection for the internal components, ensuring a longer lifespan for the attenuator.

Maximum Input Power (CW): 26.02 dBm

High maximum input power handling capability allows for reliable operation in high-power RF environments.

Nominal Attenuation: 31 dB

Provides significant attenuation of the signal, making it ideal for applications where signal reduction is needed.

Construction: COMPONENT

Component construction ensures high quality and reliability for consistent performance over time.

Power Supplies (V): -5

Low power supply voltage requirement of -5V allows for efficient power consumption and compatibility with various systems.

No. of Terminals: 16

Multiple terminals offer flexibility in connectivity options and signal routing for diverse applications.

Maximum Operating Temperature: 85 °C

Wide operating temperature range of -40 °C to 85°C enables reliable operation in various environmental conditions.

Terminal Finish: Matte Tin (Sn)

Matte tin terminal finish provides corrosion resistance and ensures good electrical conductivity for consistent performance.

Maximum Insertion Loss: 2.7 dB

Low insertion loss preserves signal integrity and minimizes signal degradation, maintaining overall system performance.

Technology: GAAS

GaAs technology offers high efficiency, low noise, and excellent linearity for superior RF performance.

Maximum Supply Current: 6 mA

Low supply current requirement of 6mA ensures energy efficiency and compatibility with power supply limitations.

RF or Microwave Device Type: VARIABLE ATTENUATOR

Variable attenuator type allows for adjustable signal attenuation, giving users the flexibility to control signal levels as needed.

Characteristic Impedance: 50 ohm

50 ohm characteristic impedance ensures compatibility with standard RF systems and reduces signal reflections for optimal performance.

Minimum Operating Frequency: 0 MHz

Wide frequency range starting from 0MHz allows for use in a variety of RF applications with different frequency requirements.

Mounting Feature: SURFACE MOUNT

Surface mount design facilitates easy and secure installation on PCBs, saving space and simplifying integration into systems.

Maximum Operating Frequency: 4000 MHz

High maximum operating frequency of 4000MHz ensures compatibility with a wide range of RF signals and applications.

Technical Specifications

RF/Microwave Attenuators HMC307QS16GETR attributes and parameters. Explore more RF/Microwave Attenuators devices from Analog Devices

Specs

Nominal Attenuation:

31 dB

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Maximum Input Power (CW):

26.02 dBm

Maximum Insertion Loss:

2.7 dB

JESD-609 Code:

e3

Mounting Feature:

No. of Terminals:

16

Maximum Operating Frequency:

4000 MHz

Minimum Operating Frequency:

0 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

SSOP16,.25

Power Supplies (V):

-5

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Attenuators

Maximum Supply Current:

6 mA

Technology:

Terminal Finish:

Matte Tin (Sn)

Trade Compliance

HMC307QS16GETR RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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