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BLF8G10LS-160,112

Ampleon Netherlands B V

BLF8G10LS-160,112 by Ampleon Netherlands B V

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): FLATPACK; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: FLAT;

Median Price

$57.460

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 4 parts In-Stock

1+ parts

-

100+ parts

$57.460

1k+ parts

$51.410

10k+ parts

$48.380

4

-

$57.460

$51.410

$48.380

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 511 parts In-Stock

1+ parts

$60.648

100+ parts

-

1k+ parts

-

10k+ parts

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511

$60.648

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-

-

Chip Stock

USA . 50,000 parts In-Stock

1+ parts

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100+ parts

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50,000

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Vyrian

USA . 2,350 parts In-Stock

1+ parts

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2,350

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Anansix

USA . 2,220 parts In-Stock

1+ parts

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2,220

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Distributors (Availability)

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Native Components

USA . 379 parts In-Stock

1+ parts

$0.738

100+ parts

-

1k+ parts

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379

$0.738

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Northwest PG Solutions

USA . 1,621 parts In-Stock

1+ parts

$0.812

100+ parts

-

1k+ parts

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10k+ parts

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1,621

$0.812

-

-

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Andel Nordic

Denmark . 1,882 parts In-Stock

1+ parts

$1.660

100+ parts

-

1k+ parts

$1.164

10k+ parts

$1.164

1,882

$1.660

-

$1.164

$1.164

Corphita

USA . 1,415 parts In-Stock

1+ parts

$57.456

100+ parts

-

1k+ parts

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10k+ parts

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1,415

$57.456

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Component Stockers USA

USA . 2 parts In-Stock

1+ parts

$65.640

100+ parts

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2

$65.640

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Microchip USA

USA . 3,116 parts In-Stock

1+ parts

$140.944

100+ parts

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3,116

$140.944

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QUARKTWIN TECHNOLOGY LTD

USA . 20,548 parts In-Stock

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20,548

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UNI Independent Distributors

Spain . 4,450 parts In-Stock

1+ parts

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4,450

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Technical Specifications

RF Power Field Effect Transistors (FET) BLF8G10LS-160,112 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Ampleon Netherlands B V

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

65 V

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-CDFP-F2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Reference Standard:

IEC-60134

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BLF8G10LS-160,112 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Ampleon Netherlands B V

The Leading Global Partner in RF Power Created in 2015, Ampleon is shaped by more than 50 years of RF Power leadership. The company envisions to make the world a better place through innovation in high frequency applications based on the advanced GaN and LDMOS technologies. Ampleon has more than 1,600 employees worldwide, dedicated to enable their customers to be successful with RF Power products through close cooperation and partnership, innovation, and excellent execution. Its innovative, yet consistent portfolio offers products and solutions for 4G LTE and 5G NR infrastructure, industrial, scientific, medical, broadcast, navigation and safety radio applications.

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