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BLF7G22L-130

Ampleon Netherlands B V

BLF7G22L-130 by Ampleon Netherlands B V

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Maximum Drain Current (ID): 28 A; Minimum DS Breakdown Voltage: 65 V;

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Digiode

USA . 4,926 parts In-Stock

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Anansix

USA . 1,428 parts In-Stock

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Vyrian

USA . 811 parts In-Stock

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Native Components

USA . 477 parts In-Stock

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$1.567

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Northwest PG Solutions

USA . 359 parts In-Stock

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$1.724

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One Stop Electronics

USA . 384 parts In-Stock

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$51.050

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A-Z Elektronik GmbH

Germany . 5,714 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,809 parts In-Stock

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UNI Independent Distributors

Spain . 2,914 parts In-Stock

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Authorized Procurement Solutions

USA . 2,800 parts In-Stock

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Corphita

USA . 2,204 parts In-Stock

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Perfect Parts

USA . 1,902 parts In-Stock

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Technical Specifications

RF Power Field Effect Transistors (FET) BLF7G22L-130 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Ampleon Netherlands B V

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

65 V

Maximum Drain Current (ID):

28 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

S BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BLF7G22L-130 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Ampleon Netherlands B V

The Leading Global Partner in RF Power Created in 2015, Ampleon is shaped by more than 50 years of RF Power leadership. The company envisions to make the world a better place through innovation in high frequency applications based on the advanced GaN and LDMOS technologies. Ampleon has more than 1,600 employees worldwide, dedicated to enable their customers to be successful with RF Power products through close cooperation and partnership, innovation, and excellent execution. Its innovative, yet consistent portfolio offers products and solutions for 4G LTE and 5G NR infrastructure, industrial, scientific, medical, broadcast, navigation and safety radio applications.

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