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AO6402A

Alpha & Omega Semiconductor

AO6402A by Alpha & Omega Semiconductor

AO6402A by Alpha & Omega Semiconductor is a N-CHANNEL FET with 30V DS Breakdown Voltage and 0.027 ohm RDS(ON). It's used for SWITCHING applications in ENHANCEMENT MODE, featuring 30A IDM and built-in DIODE. Ideal for surface mount designs due to GULL WING terminals and SMALL OUTLINE package style.

Median Price

$0.375

Lifecycle Status

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10

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1k+

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Nova Conductors

Japan . 500 parts In-Stock

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$0.450

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Bristol Electronics

USA . 12,632 parts In-Stock

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$0.375

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$0.150

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$0.101

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$0.101

Dan-Mar Components

USA . 12,632 parts In-Stock

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Rebound Electronics

UK . 7,973 parts In-Stock

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NexGen Digital

USA . 6,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 6,000 parts In-Stock

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Vyrian

USA . 5,861 parts In-Stock

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VNN

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TME

Poland . 2,398 parts In-Stock

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$0.074

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$0.066

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$0.061

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ComSIT Distribution GmbH

Germany . 1,266 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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$0.441

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$0.423

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$0.441

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AZTECH Wire

Italy . 370 parts In-Stock

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$18.321

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Kepictronics

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iodParts Technologies Inc.

India . 14,655 parts In-Stock

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$0.275

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Futuretech Components

Singapore . 3,091 parts In-Stock

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Component Stockers USA

USA . 2,016 parts In-Stock

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$0.140

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$0.130

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Perfect Parts

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Assy Fe

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GreenTree Electronics

Israel . 900 parts In-Stock

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Overview

Looking for a high-quality Power FET to enhance your electronic devices? Look no further than the AO6402A by Alpha & Omega Semiconductor. With its N-CHANNEL configuration and built-in diode, this transistor is perfect for switching applications. Its small outline package and low on-resistance make it a versatile and efficient choice for your projects. Trust in Alpha & Omega Semiconductor's expertise to deliver reliable and innovative solutions for all your power management needs. Elevate your designs with the AO6402A and experience the difference in performance and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body enhances durability and reliability of the transistor.

Polarity or Channel Type: N-CHANNEL

N-channel transistors offer lower ON resistance and faster switching speeds, making them suitable for various high-power applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode provides protection against back EMF when switching off the transistor, increasing the robustness of the circuit.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor is optimized for high efficiency and fast response times.

Surface Mount: YES

Suited for modern PCB designs, the surface-mount capability of this transistor simplifies assembly and saves space.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this transistor can handle higher voltage loads effectively.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement and orientation on the PCB, facilitating efficient circuit design.

Terminal Form: GULL WING

Gull wing terminals provide strong mechanical connections, reducing the risk of solder joint failure and ensuring stable performance.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer better control over the ON state, allowing for precise switching and power management in the circuit.

Maximum Pulsed Drain Current (IDM): 30 A

With a maximum pulsed drain current of 30A, this transistor can handle high-power pulses without the risk of overheating or damage.

No. of Terminals: 6

The presence of 6 terminals allows for additional flexibility in circuit connections and applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB while providing efficient heat dissipation and thermal management.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

The metal-oxide semiconductor technology used in this FET ensures high reliability, low power consumption, and improved performance characteristics.

Transistor Element Material: SILICON

Silicon-based transistors offer excellent thermal stability, high breakdown voltage, and low leakage current, contributing to the overall reliability of the device.

Maximum Drain-Source On Resistance: 0.027 ohm

The low drain-source on resistance of 0.027 ohms minimizes power loss and heat generation during operation, leading to higher efficiency.

Terminal Position: DUAL

The dual terminal position allows for easy and secure connections, ensuring proper contact and reliable performance in the circuit.

Technical Specifications

Power Field Effect Transistors (FET) AO6402A attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Alpha & Omega Semiconductor

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain-Source On Resistance:

.027 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

30 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

AO6402A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Alpha & Omega Semiconductor

Alpha and Omega Semiconductor is committed to excellence in design, manufacturing, and responsiveness to our customers through the continued development of new technologies, products and innovative solutions. We bring to the market devices designed to benefit our customers by meeting their product specific needs. Our mission is to bring value to our customers, shareholders and employees. We pride ourself in our expertise in all areas of power semiconductor technology and business operations. Our intellectual property and technical knowledge encompasses the latest advancements in the power semiconductor industry. AOS differentiates itself by integrating its Discrete and IC semiconductor process technology, product design, and advanced packaging know-how to develop high performance power management solutions. AOS's portfolio of products targets high-volume applications, including but not limited to portable computers, flat panel TVs, LED lighting, smart phones, battery packs, consumer and industrial motor controls and power supplies for TVs, computers, servers and telecommunications equipment.

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