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.7 W Small Signal Field Effect Transistors (FET) 7

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
RW1E025RPT2CR by ROHM

RW1E025RPT2CR

ROHM

ROHM's RW1E025RPT2CR is a P-CHANNEL FET with 30V DS breakdown voltage, ideal for SWITCHING applications. It features a max ID of 2.5A, 0.075 ohm RDS(on), and operates in ENHANCEMENT MODE. With a small outline package style and peak reflow temp of 260°C, it offers efficient performance in various electronic devices.

SINGLE WITH BUILT-IN DIODE

30 V

2.5 A

2.5 A

.075 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F6

e2

1

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

.7 W

Not Qualified

Other Transistors

YES

TIN COPPER

FLAT

DUAL

10

SWITCHING

SILICON

MTM78E2B0LBF by Panasonic

MTM78E2B0LBF

Panasonic

Panasonic MTM78E2B0LBF is a N-CHANNEL FET with 2 elements, diode, and resistor. It operates in enhancement mode for switching applications. Features include 20V breakdown voltage, 4A drain current, 0.025 ohm on resistance, and 150°C max temp.

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

20 V

4 A

4 A

.025 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

.7 W

FET General Purpose Power

YES

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

NTHS5402T1 by Onsemi

NTHS5402T1

Onsemi

NTHS5402T1 by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, 4.9A ID, and 0.035 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temp of 150 °C. This RECTANGULAR package has 8 terminals and built-in diode, suitable for surface mount technology.

SINGLE WITH BUILT-IN DIODE

30 V

4.9 A

4.9 A

.035 ohm

METAL-OXIDE SEMICONDUCTOR

R-XDSO-C8

e0

1

1

8

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

.7 W

Not Qualified

FET General Purpose Power

YES

TIN LEAD

C BEND

DUAL

SWITCHING

SILICON

NTHS5443T1 by Onsemi

NTHS5443T1

Onsemi

NTHS5443T1 by Onsemi is a P-CHANNEL FET for SWITCHING applications. Features include 20V DS Breakdown Voltage, 3.6A Drain Current, and 0.065 ohm On Resistance. Ideal for small outline packages with operating temperature up to 150 °C.

LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE

20 V

3.6 A

3.6 A

.065 ohm

METAL-OXIDE SEMICONDUCTOR

R-XDSO-C8

e0

1

1

8

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

235

P-CHANNEL

.7 W

Not Qualified

Other Transistors

YES

TIN LEAD

C BEND

DUAL

SWITCHING

SILICON

NTHS5445T1 by Onsemi

NTHS5445T1

Onsemi

NTHS5445T1 by Onsemi is a P-CHANNEL FET with 8V DS Breakdown Voltage, 5.2A Drain Current, and 0.035 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150 °C. This RECTANGULAR package with DUAL terminals is designed for high-power efficiency in various electronic devices.

LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE

8 V

5.2 A

5.2 A

.035 ohm

METAL-OXIDE SEMICONDUCTOR

R-XDSO-C8

e0

1

1

8

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

235

P-CHANNEL

.7 W

Not Qualified

Other Transistors

YES

TIN LEAD

C BEND

DUAL

SWITCHING

SILICON

NTHS5404T1G by Onsemi

NTHS5404T1G

Onsemi

NTHS5404T1G by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 5.2A ID, and 0.03 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150°C. This RECTANGULAR package has 8 terminals and built-in DIODE, making it suitable for high-power circuits.

LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE

20 V

5.2 A

5.2 A

.03 ohm

METAL-OXIDE SEMICONDUCTOR

R-XDSO-C8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.7 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

C BEND

DUAL

30

SWITCHING

SILICON

DMN65D7LFR4-7 by Diodes Incorporated

DMN65D7LFR4-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .7 W; Package Shape: SQUARE; No. of Elements: 1;

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

.26 A

5 ohm

METAL-OXIDE SEMICONDUCTOR

2.7 pF

S-PDSO-N4

e4

1

4

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

.7 W

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

SWITCHING

SILICON