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NXP Semiconductors Small Signal Bipolar Junction Transistors (BJT) 202

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
PH2369,116 by NXP Semiconductors

PH2369,116

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): .2 A; Terminal Finish: TIN;

.2 A

4 pF

15 V

SINGLE

20

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

Not Qualified

NO

TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

500 MHz

20 ns

10 ns

.25 V

PN2907A,116 by NXP Semiconductors

PN2907A,116

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .6 A;

.6 A

8 pF

60 V

SINGLE

50

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

200 MHz

365 ns

40 ns

1.6 V

PMEM4020APD,115 by NXP Semiconductors

PMEM4020APD,115

NXP Semiconductors

PNP; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): 1.3 A;

1.3 A

40 V

SINGLE WITH BUILT-IN DIODE

50

R-PDSO-G6

e3

1

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.6 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn)

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

PDTB113EU,135 by NXP Semiconductors

PDTB113EU,135

NXP Semiconductors

NXP Semiconductors' PDTB113EU,135 is a PNP BJT with built-in resistor for switching applications. Features include hFE of 33, VCE of 50V, and fT of 140MHz. This small outline transistor has Gull Wing terminals and meets AEC-Q101 and IEC-60134 standards.

BUILT IN BIAS RESISTANCE RATIO IS 1

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

33

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

140 MHz

PDTB113ZU,135 by NXP Semiconductors

PDTB113ZU,135

NXP Semiconductors

NXP Semiconductors' PDTB113ZU,135 is a PNP BJT with built-in resistor for switching applications. Features include 50V VCE, 0.5A IC, and 140MHz fT. This small outline transistor has Gull Wing terminals and meets AEC-Q101 and IEC-60134 standards.

BUILT IN BIAS RESISTANCE RATIO IS 10

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

140 MHz

PDTB123EU,135 by NXP Semiconductors

PDTB123EU,135

NXP Semiconductors

The NXP Semiconductors PDTB123EU,135 is a PNP BJT with built-in resistor for switching applications. It has a hFE of 40, Vce of 50V, and fT of 140MHz. This small outline transistor features gull wing terminals in a rectangular package suitable for surface mount assembly.

BUILT IN BIAS RESISTANCE RATIO IS 1

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

40

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

140 MHz

PDTB123YU,135 by NXP Semiconductors

PDTB123YU,135

NXP Semiconductors

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Collector Current (IC): .5 A; No. of Elements: 1;

BUILT IN BIAS RESISTANCE RATIO IS 4.55

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

140 MHz

PDTB143ET,215 by NXP Semiconductors

PDTB143ET,215

NXP Semiconductors

NXP Semiconductors' PDTB143ET,215 is a PNP BJT with built-in resistor for switching applications. Features include hFE of 60, VCE of 50V, and fT of 140MHz. This small outline transistor has Gull Wing terminals in a rectangular package.

BUILT IN BIAS RESISTOR RATIO IS 1

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

60

TO-236AB

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

140 MHz

PDTD114EU,135 by NXP Semiconductors

PDTD114EU,135

NXP Semiconductors

NXP Semiconductors PDTD114EU,135 is a NPN BJT transistor with built-in resistor for switching applications. It features hFE of 70, VCE of 50V, and fT of 225MHz. This small outline package with gull wing terminals is ideal for surface mount designs in automotive and industrial electronics.

BUILT IN BIAS RESISTANCE RATIO IS 1

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

225 MHz

PDTD123EU,135 by NXP Semiconductors

PDTD123EU,135

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 225 MHz; Maximum Collector Current (IC): .5 A; Maximum Collector-Emitter Voltage: 50 V;

BUILT IN BIAS RESISTANCE RATIO IS 1

.5 A

50 V

SINGLE WITH BUILT-IN RESISTOR

40

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

225 MHz