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170 MHz Small Signal Bipolar Junction Transistors (BJT) 25

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BCV27E6327HTSA1 by Infineon Technologies

BCV27E6327HTSA1

Infineon Technologies

BCV27E6327HTSA1 by Infineon Technologies is a NPN Darlington transistor with 4000 min hFE, 30V VCEO, and 170MHz fT. Ideal for small signal applications in electronics due to its high DC current gain and low power dissipation of 0.36W. Suitable for surface mount designs with a compact rectangular package style.

.5 A

30 V

DARLINGTON

4000

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.36 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

SILICON

170 MHz

BCV47E6433HTMA1 by Infineon Technologies

BCV47E6433HTMA1

Infineon Technologies

BCV47E6433HTMA1 by Infineon is a NPN Darlington BJT with 2000 hFE, 60V VCE, and 170MHz fT. Ideal for applications requiring high current gain and voltage amplification in compact electronic devices due to its small outline package and surface mount capability.

.5 A

60 V

DARLINGTON

2000

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

Not Qualified

YES

GULL WING

DUAL

NOT SPECIFIED

SILICON

170 MHz

BC817K25E6327HTSA1 by Infineon Technologies

BC817K25E6327HTSA1

Infineon Technologies

BC817K25E6327HTSA1 by Infineon is a NPN BJT transistor with hFE of 160, VCE of 45V, and IC of 0.5A. Ideal for amplifier applications due to its high transition frequency of 170MHz. It comes in a small outline package with gull wing terminals for surface mount assembly.

.5 A

45 V

SINGLE

160

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

170 MHz

BC818K16WH6327XTSA1 by Infineon Technologies

BC818K16WH6327XTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): .5 A; Terminal Form: GULL WING;

.5 A

25 V

SINGLE

100

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

170 MHz

BC818K40E6327HTSA1 by Infineon Technologies

BC818K40E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): .5 A; No. of Elements: 1;

.5 A

25 V

SINGLE

250

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

170 MHz

BCW66KGE6327HTSA1 by Infineon Technologies

BCW66KGE6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): .8 A; Package Shape: RECTANGULAR;

.8 A

45 V

SINGLE

40

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

170 MHz

BC368,112 by NXP Semiconductors

BC368,112

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 170 MHz; Maximum Power Dissipation (Abs): .83 W; Maximum Collector Current (IC): 1 A;

1 A

40 pF

20 V

SINGLE

85

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.83 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

170 MHz

.5 V

2DD2661-13 by Diodes Incorporated

2DD2661-13

Diodes Incorporated

2DD2661-13 by Diodes Inc. is a NPN BJT transistor with max power dissipation of 2W, hFE of 270, and fT of 170MHz. Ideal for switching applications, it has a max collector-emitter voltage of 12V and max collector current of 2A. Suitable for surface mount with matte tin finish in a small outline package style.

COLLECTOR

2 A

12 V

SINGLE

270

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

170 MHz

2DD2678-13 by Diodes Incorporated

2DD2678-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

12 V

SINGLE

270

R-PDSO-F4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

170 MHz

MPS4124G by Onsemi

MPS4124G

Onsemi

MPS4124G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.625W, hFE of 60, and operates at up to 150 °C. With a max collector-emitter voltage of 25V and max collector current of 0.2A, it offers reliable performance in various electronic circuits.

.2 A

25 V

SINGLE

60

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

170 MHz

BCP68-25/ZLF by Nexperia

BCP68-25/ZLF

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): 2 A; Maximum Time At Peak Reflow Temperature (s): 30;

COLLECTOR

2 A

20 V

SINGLE

160

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

170 MHz

BCP68-25/ZLX by Nexperia

BCP68-25/ZLX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): 2 A; Moisture Sensitivity Level (MSL): 1;

COLLECTOR

2 A

20 V

SINGLE

160

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

170 MHz

BCP68/ZLF by Nexperia

BCP68/ZLF

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): 2 A; Case Connection: COLLECTOR;

COLLECTOR

2 A

20 V

SINGLE

50

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

170 MHz

BCP68/ZLX by Nexperia

BCP68/ZLX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): 2 A; No. of Terminals: 4;

COLLECTOR

2 A

20 V

SINGLE

50

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

170 MHz

BCP68F by Nexperia

BCP68F

Nexperia

Nexperia's BCP68F is a NPN BJT transistor with hFE of 50, VCE of 20V, and IC of 2A. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and fT of 170MHz. Features GULL WING terminals in a SMALL OUTLINE package style.

COLLECTOR

2 A

20 V

SINGLE

50

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

170 MHz

BC817K25WE6327HTSA1 by Infineon Technologies

BC817K25WE6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): .5 A; Reference Standard: AEC-Q101;

.5 A

45 V

SINGLE

160

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

GULL WING

DUAL

AMPLIFIER

SILICON

170 MHz

BC817K40WE6327HTSA1 by Infineon Technologies

BC817K40WE6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): .5 A; Terminal Form: GULL WING;

.5 A

45 V

SINGLE

250

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

GULL WING

DUAL

AMPLIFIER

SILICON

170 MHz

BCR108SH6433XTMA1 by Infineon Technologies

BCR108SH6433XTMA1

Infineon Technologies

Infineon's BCR108SH6433XTMA1 is a NPN BJT with 2 elements, built-in resistor, and hFE of 70. Ideal for switching applications with max VCE of 50V and IC of 0.1A. AEC-Q101 compliant, it operates at fT of 170MHz in a small outline package suitable for surface mount designs.

BUILT-IN BIAS RESISTOR RATIO IS 21.36

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

70

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

170 MHz

BC817K16E6433HTMA1 by Infineon Technologies

BC817K16E6433HTMA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY;

.5 A

45 V

SINGLE

100

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

GULL WING

DUAL

AMPLIFIER

SILICON

170 MHz

BCR108WH6433 by Infineon Technologies

BCR108WH6433

Infineon Technologies

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): .1 A; Transistor Application: SWITCHING;

BUILT-IN BIAS RESISTOR RATIO IS 21.36

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

GULL WING

DUAL

SWITCHING

SILICON

170 MHz

BC817K-25WH6433 by Infineon Technologies

BC817K-25WH6433

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 160;

.5 A

45 V

SINGLE

160

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

170 MHz

BCW66KG-E6433 by Infineon Technologies

BCW66KG-E6433

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

.8 A

45 V

SINGLE

40

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

.5 W

AEC-Q101

Other Transistors

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

170 MHz

BCW66KHB6327HTLA1 by Infineon Technologies

BCW66KHB6327HTLA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): .8 A; Peak Reflow Temperature (C): NOT SPECIFIED;

.8 A

45 V

SINGLE

40

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

170 MHz

BCR08PNE6327BTSA1 by Infineon Technologies

BCR08PNE6327BTSA1

Infineon Technologies

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 21.36

.1 A

2 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

70

R-PDSO-G6

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.25 W

AEC-Q101

YES

GULL WING

DUAL

SWITCHING

SILICON

170 MHz

.3 V

BCR08PNE6433HTMA1 by Infineon Technologies

BCR08PNE6433HTMA1

Infineon Technologies

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 21.36

.1 A

2 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

70

R-PDSO-G6

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.25 W

AEC-Q101

YES

GULL WING

DUAL

SWITCHING

SILICON

170 MHz

.3 V