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.25 W Small Signal Bipolar Junction Transistors (BJT) 81

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
PDTC144EK,115 by NXP Semiconductors

PDTC144EK,115

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

TO-236

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.25 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

FMMT493-TP by Micro Commercial Components

FMMT493-TP

Micro Commercial Components

FMMT493-TP by Micro Commercial Components is a NPN BJT with 100V VCEO, 1A IC, and 150MHz fT. Ideal for small signal applications in electronics due to its compact SMALL OUTLINE package and high DC current gain of min 20 hFE. Suitable for surface mount designs requiring a single configuration transistor.

1 A

100 V

SINGLE

20

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.25 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

10

SILICON

150 MHz

NSTB60BDW1T1 by Onsemi

NSTB60BDW1T1

Onsemi

NSTB60BDW1T1 by Onsemi is a Small Signal BJT with NPN and PNP polarity, 2 elements with built-in resistor. It has a max collector-emitter voltage of 50V, max collector current of 0.15A, and transition frequency of 140MHz. Ideal for applications requiring high DC current gain and low power dissipation in compact designs.

BUILT IN BIAS RESISTOR RATIO IS 2.13

.15 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-G6

e0

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN AND PNP

.25 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

30

SILICON

140 MHz

KSA733CLTA by Fairchild Semiconductor

KSA733CLTA

Fairchild Semiconductor

KSA733CLTA by Fairchild Semiconductor is a PNP small signal bipolar junction transistor (BJT) with a max power dissipation of 0.25W and a min DC current gain of 350. It is commonly used as an amplifier in various applications due to its high transition frequency of 180MHz and max collector-emitter voltage of 50V.

.15 A

50 V

SINGLE

350

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.25 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

180 MHz

BCX70J-TP by Micro Commercial Components

BCX70J-TP

Micro Commercial Components

BCX70J-TP by Micro Commercial Components is a NPN BJT transistor for switching applications. It has a max collector-emitter voltage of 45V, hFE of 250, and fT of 250MHz. With surface mount capability and GULL WING terminals, it's ideal for compact electronic designs requiring fast switching speeds.

LOW NOISE

.2 A

45 V

SINGLE

250

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.25 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

10

SWITCHING

SILICON

250 MHz

800 ns

150 ns

BCR189L3E6327 by Infineon Technologies

BCR189L3E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 120;

.1 A

120

1

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR151L3E6327 by Infineon Technologies

BCR151L3E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .05 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 70;

.05 A

70

1

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR146L3E6327 by Infineon Technologies

BCR146L3E6327

Infineon Technologies

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .07 A; Transistor Element Material: SILICON; No. of Elements: 1;

.07 A

50

1

NPN

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR192L3E6327 by Infineon Technologies

BCR192L3E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Transistor Element Material: SILICON;

.1 A

70

1

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR199L3E6327 by Infineon Technologies

BCR199L3E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .07 A; No. of Elements: 1; Transistor Element Material: SILICON;

.07 A

120

1

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR164L3E6327 by Infineon Technologies

BCR164L3E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 30;

.1 A

30

1

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR196L3E6327 by Infineon Technologies

BCR196L3E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .07 A; No. of Elements: 1; Transistor Element Material: SILICON;

.07 A

50

1

1

260

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR112L3E6327 by Infineon Technologies

BCR112L3E6327

Infineon Technologies

Infineon's BCR112L3E6327 is a NPN BJT with 0.1A IC, 0.25W power dissipation, and hFE of 20. Ideal for surface mount applications in electronics requiring small signal amplification.

.1 A

20

1

NPN

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR149L3E6327 by Infineon Technologies

BCR149L3E6327

Infineon Technologies

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .07 A; Transistor Element Material: SILICON; No. of Elements: 1;

.07 A

120

1

NPN

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR114L3E6327 by Infineon Technologies

BCR114L3E6327

Infineon Technologies

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 30; Peak Reflow Temperature (C): 260;

.1 A

30

1

1

260

NPN

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR153L3E6327 by Infineon Technologies

BCR153L3E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 20; No. of Elements: 1;

.1 A

20

1

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR139L3E6327 by Infineon Technologies

BCR139L3E6327

Infineon Technologies

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 120; Transistor Element Material: SILICON;

.1 A

120

1

NPN

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR162L3E6327 by Infineon Technologies

BCR162L3E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Moisture Sensitivity Level (MSL): 1;

.1 A

20

1

1

260

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR183L3E6327 by Infineon Technologies

BCR183L3E6327

Infineon Technologies

Infineon's BCR183L3E6327 is a PNP BJT with max. power dissipation of 0.25W, min. DC current gain of 30, and max. collector current of 0.1A. Ideal for surface mount applications in electronics due to its silicon element material and peak reflow temp of 260°C.

.1 A

30

1

1

260

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR101L3E6327 by Infineon Technologies

BCR101L3E6327

Infineon Technologies

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .05 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 70;

.05 A

70

1

NPN

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR08PNE6327BTSA1 by Infineon Technologies

BCR08PNE6327BTSA1

Infineon Technologies

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 21.36

.1 A

2 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

70

R-PDSO-G6

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.25 W

AEC-Q101

YES

GULL WING

DUAL

SWITCHING

SILICON

170 MHz

.3 V

BCR08PNE6433HTMA1 by Infineon Technologies

BCR08PNE6433HTMA1

Infineon Technologies

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 21.36

.1 A

2 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

70

R-PDSO-G6

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.25 W

AEC-Q101

YES

GULL WING

DUAL

SWITCHING

SILICON

170 MHz

.3 V

BCR22PNE6433HTMA1 by Infineon Technologies

BCR22PNE6433HTMA1

Infineon Technologies

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

3 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

50

R-PDSO-G6

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.25 W

AEC-Q101

YES

GULL WING

DUAL

SWITCHING

SILICON

130 MHz

.3 V

BC847A-QVL by Nexperia

BC847A-QVL

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

.1 A

1.5 pF

45 V

SINGLE

110

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.25 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.4 V

BC847B-QVL by Nexperia

BC847B-QVL

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

.1 A

1.5 pF

45 V

SINGLE

200

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.25 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.4 V

BC847A-QR by Nexperia

BC847A-QR

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

.1 A

1.5 pF

45 V

SINGLE

110

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.25 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.4 V

BC857-QVL by Nexperia

BC857-QVL

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

.1 A

4.5 pF

45 V

SINGLE

125

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.25 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.65 V

BC857B-QVL by Nexperia

BC857B-QVL

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

.1 A

4.5 pF

45 V

SINGLE

220

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.25 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.65 V

BC857C-QVL by Nexperia

BC857C-QVL

Nexperia

BC857C-QVL by Nexperia is a PNP BJT transistor for switching applications. With a VCEsat of 0.65V, hFE of 420, and IC of 0.1A, it operates in temperatures from -65 to 150°C. This small outline package with Gull Wing terminals has a max VCE of 45V and fT of 100MHz.

.1 A

4.5 pF

45 V

SINGLE

420

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.25 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.65 V

BC857A-QR by Nexperia

BC857A-QR

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

.1 A

4.5 pF

45 V

SINGLE

125

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.25 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.65 V

BC846A-QVL by Nexperia

BC846A-QVL

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

.1 A

3 pF

65 V

SINGLE

110

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.25 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.4 V

PMBTA06-QVL by Nexperia

PMBTA06-QVL

Nexperia

Nexperia's PMBTA06-QVL is a NPN BJT transistor for switching applications. Features include VCEsat of 0.25V, hFE of 100, and IC of 0.5A. With a max operating temp of 150°C, it's ideal for automotive electronics meeting AEC-Q101 standards.

.5 A

80 V

SINGLE

100

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.25 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.25 V

PDTC124ET-QVL by Nexperia

PDTC124ET-QVL

Nexperia

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 230 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

2.5 pF

50 V

SINGLE WITH BUILT-IN RESISTOR

60

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.25 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

230 MHz

.1 V