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COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR Small Signal Bipolar Junction Transistors (BJT) 9

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
RN2502 by Toshiba

RN2502

Toshiba

PNP; Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

BUILT-IN RESISTOR RATIO IS 1

.1 A

6 pF

50 V

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

50

R-PDSO-G5

2

5

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

.3 W

Not Qualified

BIP General Purpose Small Signal

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

200 MHz

.3 V

UMG4N-7 by Diodes Incorporated

UMG4N-7

Diodes Incorporated

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;

.1 A

50 V

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G5

e3

1

2

5

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

UMA4NT1 by Onsemi

UMA4NT1

Onsemi

UMA4NT1 by Onsemi is a PNP BJT with 2 elements, built-in resistor, and common emitter configuration. It has a max collector-emitter voltage of 50V, max current of 0.1A, and min DC current gain of 160 (hFE). Ideal for switching applications in small outline packages with gull wing terminals.

BUILT IN BIAS RESISTOR

.1 A

50 V

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

160

R-PDSO-G5

e0

1

2

5

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

PNP

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

SWITCHING

SILICON

NSB1706DMW5T1 by Onsemi

NSB1706DMW5T1

Onsemi

NSB1706DMW5T1 by Onsemi is a NPN BJT with 2 elements, built-in resistor, and hFE of 80. It's ideal for switching applications with max VCE of 50V and IC of 0.1A. The transistor comes in a small outline package with Gull Wing terminals, suitable for surface mount assembly at peak reflow temp of 235 °C.

BUILT IN BIAS RESISTOR RATIO IS 10

.1 A

50 V

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-G5

e0

1

2

5

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

.385 W

Not Qualified

BIP General Purpose Small Signal

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

SWITCHING

SILICON

EMG2DXV5T1 by Onsemi

EMG2DXV5T1

Onsemi

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .338 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 80;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-F5

e3

1

2

5

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.338 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

FLAT

DUAL

30

SWITCHING

SILICON

EMG5DXV5T1 by Onsemi

EMG5DXV5T1

Onsemi

The Onsemi EMG5DXV5T1 is a NPN BJT transistor with 2 elements and built-in resistor. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80 (hFE). Ideal for switching applications in surface mount designs due to its small outline package style.

BUILT-IN BIAS RESISTOR RATIO IS 4.7

.1 A

50 V

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-F5

e3

1

2

5

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.338 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

FLAT

DUAL

30

SWITCHING

SILICON

UMA4NT1G by Onsemi

UMA4NT1G

Onsemi

UMA4NT1G by Onsemi is a PNP BJT transistor with 2 elements and built-in resistor. It has a max collector-emitter voltage of 50V, max power dissipation of 0.15W, and min DC current gain of 160. Ideal for switching applications, it comes in a small outline package with gull wing terminals for surface mount assembly.

BUILT IN BIAS RESISTOR

.1 A

50 V

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

160

R-PDSO-G5

e3

1

2

5

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

Tin (Sn)

GULL WING

DUAL

40

SWITCHING

SILICON

EMG2DXV5T1G by Onsemi

EMG2DXV5T1G

Onsemi

The Onsemi EMG2DXV5T1G is a NPN BJT transistor with 2 elements and built-in resistor. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80 (hFE). Ideal for switching applications in small outline packages.

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-F5

e3

1

2

5

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.338 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

FLAT

DUAL

30

SWITCHING

SILICON

EMG2DXV5T5G by Onsemi

EMG2DXV5T5G

Onsemi

The Onsemi EMG2DXV5T5G is a NPN BJT transistor with 2 elements and built-in resistor. It has a max collector-emitter voltage of 50V, max operating temp of 150 °C, and min DC current gain of 80 (hFE). Ideal for switching applications in surface mount designs due to its small outline package style.

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-F5

e3

1

2

5

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.338 W

Not Qualified

BIP General Purpose Small Signal

YES

Tin (Sn)

FLAT

DUAL

30

SWITCHING

SILICON