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.2 W RF Small Signal Field Effect Transistors (FET) 13

RF Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material
BF2030RE6814HTSA1 by Infineon Technologies

BF2030RE6814HTSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Operating Mode: DUAL GATE, DEPLETION MODE; No. of Terminals: 4;

LOW NOISE

SOURCE

SINGLE

10 V

.04 A

.04 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

1

4

DUAL GATE, DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

.2 W

20 dB

FET General Purpose Power

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

BF2030WH6814XTSA1 by Infineon Technologies

BF2030WH6814XTSA1

Infineon Technologies

BF2030WH6814XTSA1 by Infineon Technologies is a N-CHANNEL RF Small Signal FET with PLASTIC/EPOXY package. It operates in DUAL GATE, DEPLETION MODE and has ULTRA HIGH FREQUENCY BAND. This transistor is commonly used as an AMPLIFIER in various applications.

LOW NOISE

SOURCE

SINGLE

10 V

.04 A

.04 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

1

4

DUAL GATE, DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

.2 W

20 dB

FET General Purpose Power

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

BF1201WR,115 by NXP Semiconductors

BF1201WR,115

NXP Semiconductors

BF1201WR,115 by NXP Semiconductors is an N-CHANNEL RF FET with a built-in diode for AMPLIFIER applications. It operates in DUAL GATE, ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND. With a max drain current of 0.03 A and power dissipation of 0.2 W, it has a small outline package style suitable for high-frequency circuits.

LOW NOISE

SOURCE

SINGLE WITH BUILT-IN DIODE

10 V

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

.03 pF

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

4

DUAL GATE, ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.2 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

BF1202WR,115 by NXP Semiconductors

BF1202WR,115

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 1; Case Connection: SOURCE;

LOW NOISE

SOURCE

SINGLE WITH BUILT-IN DIODE

10 V

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

.03 pF

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

4

DUAL GATE, ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.2 W

Not Qualified

FET General Purpose Powers

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

BF908,215 by NXP Semiconductors

BF908,215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

LOW NOISE

SOURCE

SINGLE WITH BUILT-IN DIODE

12 V

.04 A

METAL-OXIDE SEMICONDUCTOR

45 pF

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

4

DUAL GATE, DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.2 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

BF991,215 by NXP Semiconductors

BF991,215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): 30;

SOURCE

SINGLE WITH BUILT-IN DIODE

20 V

.02 A

.02 A

METAL-OXIDE SEMICONDUCTOR

VERY HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

1

4

DUAL GATE, DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.2 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

BF992,215 by NXP Semiconductors

BF992,215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Style (Meter): SMALL OUTLINE; Qualification: Not Qualified;

SOURCE

SINGLE WITH BUILT-IN DIODE

20 V

.04 A

.04 A

METAL-OXIDE SEMICONDUCTOR

.04 pF

VERY HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

1

4

DUAL GATE, DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.2 W

Not Qualified

FET General Purpose Power

YES

Tin (Sn)

GULL WING

DUAL

30

AMPLIFIER

SILICON

BF994S,215 by NXP Semiconductors

BF994S,215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Transistor Element Material: SILICON;

SOURCE

SINGLE WITH BUILT-IN DIODE

20 V

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

VERY HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

1

4

DUAL GATE, DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.2 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

BF996S,215 by NXP Semiconductors

BF996S,215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 1;

SOURCE

SINGLE WITH BUILT-IN DIODE

20 V

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

1

4

DUAL GATE, DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.2 W

Not Qualified

FET General Purpose Powers

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

BF998,215 by NXP Semiconductors

BF998,215

NXP Semiconductors

BF998,215 by NXP Semiconductors is an N-CHANNEL RF FET with a 12V DS Breakdown Voltage. It operates in the ULTRA HIGH FREQ BAND and has a 0.03A Drain Current. Ideal for AMPLIFIER applications, this transistor features DUAL GATE DEPLETION MODE and a max power dissipation of 0.2W.

LOW NOISE

SOURCE

SINGLE WITH BUILT-IN DIODE

12 V

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

4

DUAL GATE, DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.2 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

BF998R,215 by NXP Semiconductors

BF998R,215

NXP Semiconductors

NXP Semiconductors' BF998R,215 is an N-CHANNEL RF FET with a built-in diode for AMPLIFIER applications. Operating in DEPLETION MODE, it offers a 12V DS Breakdown Voltage and 0.03A Drain Current. With GULL WING terminals and ULTRA HIGH FREQUENCY capabilities, it's ideal for small outline designs in SOURCE connections.

LOW NOISE

SOURCE

SINGLE WITH BUILT-IN DIODE

12 V

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

4

DUAL GATE, DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.2 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

MPF102G by Onsemi

MPF102G

Onsemi

MPF102G by Onsemi is an N-CHANNEL RF FET with a 25V DS breakdown voltage, ideal for AMPLIFIER applications in the VERY HIGH FREQUENCY BAND. Featuring a DEPLETION MODE operation, it has a max power dissipation of 0.2W and can withstand up to 125 °C operating temperature.

SINGLE

25 V

JUNCTION

3 pF

VERY HIGH FREQUENCY BAND

TO-92

O-PBCY-T3

e1

1

3

DEPLETION MODE

125 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

N-CHANNEL

.2 W

Not Qualified

Other Transistors

NO

Tin/Silver/Copper (Sn/Ag/Cu)

THROUGH-HOLE

BOTTOM

40

AMPLIFIER

SILICON

BF998,235 by NXP Semiconductors

BF998,235

NXP Semiconductors

BF998,235 by NXP Semiconductors is an N-CHANNEL RF FET with a 12V DS Breakdown Voltage. It operates in DEPLETION MODE and has a max ID of 0.03A. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, this transistor features a GULL WING terminal form and can handle up to 0.2W power dissipation.

LOW NOISE

SOURCE

SINGLE WITH BUILT-IN DIODE

12 V

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

4

DUAL GATE, DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.2 W

IEC-134

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON