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SINGLE WITH BUILT-IN DIODE RF Small Signal Field Effect Transistors (FET) 21

RF Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material
BB502CBS-TL-H by Renesas Electronics

BB502CBS-TL-H

Renesas Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Additional Features: LOW NOISE;

LOW NOISE

SINGLE WITH BUILT-IN DIODE

6 V

.02 A

.02 A

METAL-OXIDE SEMICONDUCTOR

.05 pF

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

1

4

DUAL GATE, DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

.1 W

17 dB

FET General Purpose Power

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

BB504CDS-TL-H by Renesas Electronics

BB504CDS-TL-H

Renesas Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; No. of Terminals: 4; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

LOW NOISE

SINGLE WITH BUILT-IN DIODE

6 V

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

.05 pF

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

1

4

DUAL GATE, DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

.1 W

17 dB

FET General Purpose Power

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

BF1118WR by NXP Semiconductors

BF1118WR

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .01 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR;

SINGLE WITH BUILT-IN DIODE

3 V

.01 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

1

4

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

IEC-60134

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

BF1108R,215 by NXP Semiconductors

BF1108R,215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Application: SWITCHING; Qualification: Not Qualified;

GATE

SINGLE WITH BUILT-IN DIODE

3 V

.01 A

.01 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

1

4

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

BF1201WR,115 by NXP Semiconductors

BF1201WR,115

NXP Semiconductors

BF1201WR,115 by NXP Semiconductors is an N-CHANNEL RF FET with a built-in diode for AMPLIFIER applications. It operates in DUAL GATE, ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND. With a max drain current of 0.03 A and power dissipation of 0.2 W, it has a small outline package style suitable for high-frequency circuits.

LOW NOISE

SOURCE

SINGLE WITH BUILT-IN DIODE

10 V

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

.03 pF

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

4

DUAL GATE, ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.2 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

BF1202WR,115 by NXP Semiconductors

BF1202WR,115

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 1; Case Connection: SOURCE;

LOW NOISE

SOURCE

SINGLE WITH BUILT-IN DIODE

10 V

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

.03 pF

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

4

DUAL GATE, ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.2 W

Not Qualified

FET General Purpose Powers

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

BF1212,215 by NXP Semiconductors

BF1212,215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; No. of Elements: 1; Terminal Position: DUAL;

LOW NOISE

SOURCE

SINGLE WITH BUILT-IN DIODE

6 V

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

.03 pF

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

4

DUAL GATE, ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.18 W

Not Qualified

FET General Purpose Powers

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

BF1212R,215 by NXP Semiconductors

BF1212R,215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Minimum DS Breakdown Voltage: 6 V;

LOW NOISE

SOURCE

SINGLE WITH BUILT-IN DIODE

6 V

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

.03 pF

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

4

DUAL GATE, ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.18 W

Not Qualified

FET General Purpose Powers

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

BF1212WR,115 by NXP Semiconductors

BF1212WR,115

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; No. of Terminals: 4; Operating Mode: DUAL GATE, ENHANCEMENT MODE;

LOW NOISE

SOURCE

SINGLE WITH BUILT-IN DIODE

6 V

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

.03 pF

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

1

4

DUAL GATE, ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.18 W

Not Qualified

FET General Purpose Powers

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

BF904,215 by NXP Semiconductors

BF904,215

NXP Semiconductors

NXP Semiconductors' BF904,215 is an N-CHANNEL RF FET with a 7V DS breakdown voltage. It operates in the UHF band, has a max drain current of 0.03A, and features a built-in diode for amplifier applications. The transistor is surface mountable, with GULL WING terminals and a max operating temperature of 150°C.

LOW NOISE

SOURCE

SINGLE WITH BUILT-IN DIODE

7 V

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

.035 pF

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

1

4

DUAL GATE, ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

BF904R,215 by NXP Semiconductors

BF904R,215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Terminal Form: GULL WING; Maximum Operating Temperature: 150 Cel;

LOW NOISE

SOURCE

SINGLE WITH BUILT-IN DIODE

7 V

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

.035 pF

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

4

DUAL GATE, ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

BF908,215 by NXP Semiconductors

BF908,215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

LOW NOISE

SOURCE

SINGLE WITH BUILT-IN DIODE

12 V

.04 A

METAL-OXIDE SEMICONDUCTOR

45 pF

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

4

DUAL GATE, DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.2 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

BF908WR,115 by NXP Semiconductors

BF908WR,115

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Operating Mode: DUAL GATE, DEPLETION MODE; Maximum Feedback Capacitance (Crss): .045 pF;

LOW NOISE

SOURCE

SINGLE WITH BUILT-IN DIODE

12 V

.04 A

.04 A

METAL-OXIDE SEMICONDUCTOR

.045 pF

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

4

DUAL GATE, DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.3 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

BF991,215 by NXP Semiconductors

BF991,215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): 30;

SOURCE

SINGLE WITH BUILT-IN DIODE

20 V

.02 A

.02 A

METAL-OXIDE SEMICONDUCTOR

VERY HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

1

4

DUAL GATE, DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.2 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

BF992,215 by NXP Semiconductors

BF992,215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Style (Meter): SMALL OUTLINE; Qualification: Not Qualified;

SOURCE

SINGLE WITH BUILT-IN DIODE

20 V

.04 A

.04 A

METAL-OXIDE SEMICONDUCTOR

.04 pF

VERY HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

1

4

DUAL GATE, DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.2 W

Not Qualified

FET General Purpose Power

YES

Tin (Sn)

GULL WING

DUAL

30

AMPLIFIER

SILICON

BF994S,215 by NXP Semiconductors

BF994S,215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Transistor Element Material: SILICON;

SOURCE

SINGLE WITH BUILT-IN DIODE

20 V

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

VERY HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

1

4

DUAL GATE, DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.2 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

BF996S,215 by NXP Semiconductors

BF996S,215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 1;

SOURCE

SINGLE WITH BUILT-IN DIODE

20 V

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

1

4

DUAL GATE, DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.2 W

Not Qualified

FET General Purpose Powers

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

BF998,215 by NXP Semiconductors

BF998,215

NXP Semiconductors

BF998,215 by NXP Semiconductors is an N-CHANNEL RF FET with a 12V DS Breakdown Voltage. It operates in the ULTRA HIGH FREQ BAND and has a 0.03A Drain Current. Ideal for AMPLIFIER applications, this transistor features DUAL GATE DEPLETION MODE and a max power dissipation of 0.2W.

LOW NOISE

SOURCE

SINGLE WITH BUILT-IN DIODE

12 V

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

4

DUAL GATE, DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.2 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

BF998R,215 by NXP Semiconductors

BF998R,215

NXP Semiconductors

NXP Semiconductors' BF998R,215 is an N-CHANNEL RF FET with a built-in diode for AMPLIFIER applications. Operating in DEPLETION MODE, it offers a 12V DS Breakdown Voltage and 0.03A Drain Current. With GULL WING terminals and ULTRA HIGH FREQUENCY capabilities, it's ideal for small outline designs in SOURCE connections.

LOW NOISE

SOURCE

SINGLE WITH BUILT-IN DIODE

12 V

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

4

DUAL GATE, DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.2 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

BF998WR,115 by NXP Semiconductors

BF998WR,115

NXP Semiconductors

NXP Semiconductors' BF998WR,115 is an N-CHANNEL RF FET with a built-in diode for AMPLIFIER applications. Operating in DEPLETION MODE, it offers a max drain current of 0.03A and operates in the ULTRA HIGH FREQUENCY BAND. With a package style of SMALL OUTLINE, it can handle up to 150°C operating temperature.

LOW NOISE

SOURCE

SINGLE WITH BUILT-IN DIODE

12 V

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

4

DUAL GATE, DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.3 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

BF998,235 by NXP Semiconductors

BF998,235

NXP Semiconductors

BF998,235 by NXP Semiconductors is an N-CHANNEL RF FET with a 12V DS Breakdown Voltage. It operates in DEPLETION MODE and has a max ID of 0.03A. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, this transistor features a GULL WING terminal form and can handle up to 0.2W power dissipation.

LOW NOISE

SOURCE

SINGLE WITH BUILT-IN DIODE

12 V

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

4

DUAL GATE, DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.2 W

IEC-134

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON