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SINGLE RF Small Signal Field Effect Transistors (FET) 56

RF Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material
PD57002 by STMicroelectronics

PD57002

STMicroelectronics

PD57002 by STMicroelectronics is an N-channel RF FET designed for amplifier applications. It features a min DS breakdown voltage of 65V, power gain of 15 dB, and operates in the ultra-high frequency band. This surface-mount transistor supports up to 4.75W power dissipation.

HIGH RELIABILITY

SOURCE

SINGLE

65 V

.25 A

.25 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G2

e0

1

2

ENHANCEMENT MODE

165 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

4.75 W

15 dB

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

DUAL

AMPLIFIER

SILICON

VMMK-1225-BLKG by Broadcom

VMMK-1225-BLKG

Broadcom

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation Ambient: .25 W; Terminal Position: DUAL; Qualification: Not Qualified;

SOURCE

SINGLE

5 V

.05 A

.05 A

HIGH ELECTRON MOBILITY

L BAND

R-XDCC-N8

e3

1

1

8

ENHANCEMENT MODE

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

260

N-CHANNEL

.25 W

8.7 dB

Not Qualified

FET RF Small Signal

YES

TIN

NO LEAD

DUAL

AMPLIFIER

GALLIUM ARSENIDE

VMMK-1225-TR1G by Broadcom

VMMK-1225-TR1G

Broadcom

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: NO LEAD; Transistor Application: AMPLIFIER; No. of Terminals: 8;

SOURCE

SINGLE

5 V

.05 A

.05 A

HIGH ELECTRON MOBILITY

L BAND

R-XDCC-N8

e3

1

1

8

ENHANCEMENT MODE

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

260

N-CHANNEL

.25 W

8.7 dB

Not Qualified

FET RF Small Signal

YES

TIN

NO LEAD

DUAL

AMPLIFIER

GALLIUM ARSENIDE

MPF102G by Onsemi

MPF102G

Onsemi

MPF102G by Onsemi is an N-CHANNEL RF FET with a 25V DS breakdown voltage, ideal for AMPLIFIER applications in the VERY HIGH FREQUENCY BAND. Featuring a DEPLETION MODE operation, it has a max power dissipation of 0.2W and can withstand up to 125 °C operating temperature.

SINGLE

25 V

JUNCTION

3 pF

VERY HIGH FREQUENCY BAND

TO-92

O-PBCY-T3

e1

1

3

DEPLETION MODE

125 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

N-CHANNEL

.2 W

Not Qualified

Other Transistors

NO

Tin/Silver/Copper (Sn/Ag/Cu)

THROUGH-HOLE

BOTTOM

40

AMPLIFIER

SILICON

MMBF5484LT1G by Onsemi

MMBF5484LT1G

Onsemi

MMBF5484LT1G by Onsemi is an N-CHANNEL RF FET with 16 dB Gp for AMPLIFIER applications. Operating in DEPLETION MODE, it offers a very high frequency band and 3 terminals. With a max power dissipation of 0.225 W, this JUNCTION FET has a temp range of -55 to 150 °C.

SINGLE

JUNCTION

1 pF

VERY HIGH FREQUENCY BAND

TO-236AB

R-PDSO-G3

e3

1

1

3

DEPLETION MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.225 W

.225 W

16 dB

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

MMBF4416LT1G by Onsemi

MMBF4416LT1G

Onsemi

MMBF4416LT1G by Onsemi is an N-CHANNEL RF FET with 30V DS breakdown voltage and 10dB power gain, ideal for amplifier applications. It operates in depletion mode at ultra-high frequencies, with a max power dissipation of 0.225W. The transistor features a gull wing terminal form and tin finish, suitable for surface mount configurations in small outline packages.

SINGLE

30 V

JUNCTION

.8 pF

ULTRA HIGH FREQUENCY BAND

TO-236AB

R-PDSO-G3

e3

1

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.225 W

10 dB

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

PD57002-E by STMicroelectronics

PD57002-E

STMicroelectronics

PD57002-E by STMicroelectronics is an N-channel RF FET designed for amplifier applications. It features a min DS breakdown voltage of 65V, max drain current of 0.25A, and operates in the ultra-high frequency band. Ideal for compact surface mount designs, it ensures efficient performance up to 165 °C.

HIGH RELIABILITY

SOURCE

SINGLE

65 V

.25 A

.25 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G2

e3

3

1

2

ENHANCEMENT MODE

165 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

250

N-CHANNEL

4.75 W

15 dB

Not Qualified

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

30

AMPLIFIER

SILICON

3SK292(TE85R,F) by Toshiba

3SK292(TE85R,F)

Toshiba

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 12.5 V; Transistor Element Material: SILICON; Peak Reflow Temperature (C): NOT SPECIFIED;

SINGLE

12.5 V

.03 A

METAL-OXIDE SEMICONDUCTOR

.04 pF

VERY HIGH FREQUENCY BAND

R-PDSO-G4

1

4

DUAL GATE, DEPLETION MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

23.5 dB

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON