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.035 A RF Small Signal Bipolar Junction Transistors (BJT) 15

RF Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
2SC5508-A by Renesas Electronics

2SC5508-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 20000 MHz; Maximum Power Dissipation (Abs): .115 W; Maximum Collector Current (IC): .035 A;

.035 A

SINGLE

50

1

150 Cel

NPN

.115 W

Other Transistors

YES

20000 MHz

2SC5508-T2-A by Renesas Electronics

2SC5508-T2-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 20000 MHz; Maximum Power Dissipation (Abs): .115 W; Maximum Collector Current (IC): .035 A;

.035 A

SINGLE

50

1

150 Cel

NPN

.115 W

Other Transistors

YES

20000 MHz

BF799E6327HTSA1 by Infineon Technologies

BF799E6327HTSA1

Infineon Technologies

BF799E6327HTSA1 by Infineon Technologies is a NPN RF BJT transistor with 3 terminals. It operates in the ultra high frequency band at 1100 MHz, suitable for switching applications. With a max power dissipation of 0.28 W and a collector-emitter voltage of 20 V, it is designed for small outline surface mount packages.

.035 A

20 V

SINGLE

40

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.28 W

Not Qualified

Other Transistors

YES

GULL WING

DUAL

SWITCHING

SILICON

1100 MHz

BF799WH6327XTSA1 by Infineon Technologies

BF799WH6327XTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1100 MHz; Maximum Collector Current (IC): .035 A; Moisture Sensitivity Level (MSL): 1;

.035 A

20 V

SINGLE

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

AMPLIFIER

SILICON

1100 MHz

BFR93A,235 by NXP Semiconductors

BFR93A,235

NXP Semiconductors

NXP Semiconductors' BFR93A,235 is a NPN RF BJT transistor with 3 terminals. It operates in L Band with fT of 6000 MHz and hFE of 40. Ideal for amplifier applications, it has a max power dissipation of 0.35W and can handle up to 12V collector-emitter voltage.

LOW NOISE

.035 A

12 V

SINGLE

40

L BAND

TO-236AB

R-PDSO-G3

e3

1

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.35 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

6000 MHz

BFG93A,215 by NXP Semiconductors

BFG93A,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .035 A;

LOW NOISE, HIGH RELIABILITY

COLLECTOR

.035 A

12 V

SINGLE

40

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

6000 MHz

BFR93A,215 by NXP Semiconductors

BFR93A,215

NXP Semiconductors

NXP Semiconductors' BFR93A,215 is a NPN RF BJT transistor with max. freq. of 6000 MHz and hFE of 40, ideal for L Band applications like amplifiers. It has a max. power dissipation of 0.35 W, operates up to 175°C, and features a small outline package with gull wing terminals for surface mount assembly.

LOW NOISE

.035 A

12 V

SINGLE

40

L BAND

TO-236AB

R-PDSO-G3

e3

1

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.35 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

6000 MHz

BFR93AW,115 by NXP Semiconductors

BFR93AW,115

NXP Semiconductors

NXP Semiconductors' BFR93AW,115 is a NPN RF BJT transistor with 3 terminals. It operates in the ultra-high frequency band up to 5000 MHz and has a max power dissipation of 0.3 W. Ideal for amplifier applications, it features a max collector-emitter voltage of 12V and a min DC current gain of 40 hFE.

HIGH RELIABILITY

.035 A

12 V

SINGLE

40

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

.3 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

5000 MHz

BFT93,215 by NXP Semiconductors

BFT93,215

NXP Semiconductors

NXP Semiconductors' BFT93,215 is a PNP RF BJT transistor with 3 terminals. It operates in the ultra-high frequency band up to 5000 MHz and has a max power dissipation of 0.3W. Ideal for amplifier applications, it features a small outline package with gull wing terminals for surface mounting.

LOW NOISE

.035 A

12 V

SINGLE

20

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.3 W

.3 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

5000 MHz

BFR93AR,215 by NXP Semiconductors

BFR93AR,215

NXP Semiconductors

NXP Semiconductors' BFR93AR,215 is a NPN RF BJT transistor with 3 terminals. It operates in C band with fT of 6000 MHz and hFE of 40. Ideal for amplifier applications, it has a max power dissipation of 0.3W and can handle up to 12V collector-emitter voltage.

.035 A

.6 pF

12 V

SINGLE

40

C BAND

R-PDSO-G3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

AMPLIFIER

SILICON

6000 MHz

BFG325W/XR,115 by NXP Semiconductors

BFG325W/XR,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 14000 MHz; Maximum Power Dissipation (Abs): .21 W; Maximum Collector Current (IC): .035 A;

LOW NOISE

COLLECTOR

.035 A

.4 pF

6 V

SINGLE

60

L BAND

R-PDSO-G4

e3

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.21 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

14000 MHz

BFG325/XR,215 by NXP Semiconductors

BFG325/XR,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 14000 MHz; Maximum Power Dissipation (Abs): .21 W; Maximum Collector Current (IC): .035 A;

LOW NOISE

COLLECTOR

.035 A

.4 pF

6 V

SINGLE

60

L BAND

R-PDSO-G4

e3

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.21 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

14000 MHz

BFP420H6801 by Infineon Technologies

BFP420H6801

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .035 A; Maximum Collector-Base Capacitance: .3 pF;

HIGH RELIABILITY, LOW NOISE

.035 A

.3 pF

4.5 V

SINGLE

X BAND

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

25000 MHz

BFP420E6327BTSA1 by Infineon Technologies

BFP420E6327BTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Power Dissipation (Abs): .16 W; Maximum Collector Current (IC): .035 A;

HIGH RELIABILITY, LOW NOISE, TR, 7 INCH : 3000

EMITTER

.035 A

.3 pF

4.5 V

SINGLE

60

X BAND

R-PDSO-G4

1

4

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

.16 W

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

25000 MHz

BFP420E6433HTMA1 by Infineon Technologies

BFP420E6433HTMA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Power Dissipation (Abs): .16 W; Maximum Collector Current (IC): .035 A;

HIGH RELIABILITY, LOW NOISE, TR, 7 INCH : 3000

EMITTER

.035 A

.3 pF

4.5 V

SINGLE

60

X BAND

R-PDSO-G4

1

4

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

.16 W

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

25000 MHz