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52.8 W RF Power Field Effect Transistors (FET) 7

RF Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material
PD55008 by STMicroelectronics

PD55008

STMicroelectronics

STMicroelectronics PD55008 is an N-CHANNEL RF Power FET with 40V DS breakdown voltage, ideal for amplifier applications in the UHF band. It features a single configuration, GULL WING terminals, and operates in enhancement mode. With 4A max drain current and 52.8W power dissipation, it offers high performance in a small outline package.

HIGH RELIABILITY

SOURCE

SINGLE

40 V

4 A

4 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G2

e0

1

2

ENHANCEMENT MODE

165 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

52.8 W

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

DUAL

AMPLIFIER

SILICON

PD57030-E by STMicroelectronics

PD57030-E

STMicroelectronics

STMicroelectronics PD57030-E is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage and 4A Drain Current. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features ENHANCEMENT MODE operation, GULL WING terminals, and a max power dissipation of 52.8W.

HIGH RELIABILITY

SOURCE

SINGLE

65 V

4 A

4 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G2

e3

1

2

ENHANCEMENT MODE

165 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

250

N-CHANNEL

52.8 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

PD57030S-E by STMicroelectronics

PD57030S-E

STMicroelectronics

PD57030S-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact device ensures efficient performance in demanding environments.

HIGH RELIABILITY

SOURCE

SINGLE

65 V

4 A

4 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-F2

e3

1

2

ENHANCEMENT MODE

165 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

250

N-CHANNEL

52.8 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

30

AMPLIFIER

SILICON

PD54003-E by STMicroelectronics

PD54003-E

STMicroelectronics

STMicroelectronics' PD54003-E is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage. It operates in Enhancement Mode for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. With a max ID of 4A and 52.8W power dissipation, it's ideal for high-power RF amplification needs.

HIGH RELIABILITY

SOURCE

SINGLE

25 V

4 A

4 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G2

1

2

ENHANCEMENT MODE

165 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

52.8 W

Not Qualified

FET General Purpose Power

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

PD54003S-E by STMicroelectronics

PD54003S-E

STMicroelectronics

PD54003S-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This compact surface-mount device ensures efficient performance up to 165 °C.

HIGH RELIABILITY

SOURCE

SINGLE

25 V

4 A

4 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-F2

1

2

ENHANCEMENT MODE

165 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

52.8 W

Not Qualified

FET General Purpose Power

YES

FLAT

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

PD55008S-E by STMicroelectronics

PD55008S-E

STMicroelectronics

STMicroelectronics PD55008S-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage and 4A Drain Current. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features a 52.8W Power Dissipation, SMALL OUTLINE package style, and operates at up to 165°C temperature.

HIGH RELIABILITY

SOURCE

SINGLE

40 V

4 A

4 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-F2

e3

3

1

2

ENHANCEMENT MODE

165 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

250

N-CHANNEL

52.8 W

Not Qualified

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

AMPLIFIER

SILICON

PD55008STR-E by STMicroelectronics

PD55008STR-E

STMicroelectronics

PD55008STR-E by STMicroelectronics is an N-CHANNEL RF Power Field Effect Transistor (FET) with a min DS breakdown voltage of 40V. It is used as an amplifier in the ultra high frequency band, with a max drain current of 4A and a max power dissipation of 52.8W.

HIGH RELIABILITY

SOURCE

SINGLE

40 V

4 A

4 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-F2

e3

1

1

2

ENHANCEMENT MODE

165 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

52.8 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

AMPLIFIER

SILICON