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20 W RF Power Field Effect Transistors (FET) 5

RF Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material
PD57006S by STMicroelectronics

PD57006S

STMicroelectronics

PD57006S by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 1 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact device supports surface mount technology for efficient integration.

SOURCE

SINGLE

65 V

1 A

1 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-F2

e0

1

2

ENHANCEMENT MODE

165 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

20 W

Not Qualified

FET General Purpose Power

YES

TIN LEAD

FLAT

DUAL

AMPLIFIER

SILICON

PD57006-E by STMicroelectronics

PD57006-E

STMicroelectronics

PD57006-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 1 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact device supports surface mount technology with a max temp of 150 °C.

SOURCE

SINGLE

65 V

1 A

1 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G2

e3

3

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

250

N-CHANNEL

20 W

Not Qualified

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

30

AMPLIFIER

SILICON

PD57006S-E by STMicroelectronics

PD57006S-E

STMicroelectronics

PD57006S-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 1 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact surface-mount device ensures efficient performance up to 150 °C.

SOURCE

SINGLE

65 V

1 A

1 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-F2

e3

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

250

N-CHANNEL

20 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

30

AMPLIFIER

SILICON

PD57006STR-E by STMicroelectronics

PD57006STR-E

STMicroelectronics

PD57006STR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 1 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact surface-mount device ensures efficient performance up to 150 °C.

SOURCE

SINGLE

65 V

1 A

1 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-F2

e4

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

20 W

Not Qualified

FET General Purpose Power

YES

NICKEL PALLADIUM GOLD

FLAT

DUAL

AMPLIFIER

SILICON

PD57006TR-E by STMicroelectronics

PD57006TR-E

STMicroelectronics

PD57006TR-E by STMicroelectronics is an N-channel RF FET designed for amplifier applications. It features a max drain current of 1 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This surface-mount transistor excels in compact designs with high power dissipation up to 20 W.

SOURCE

SINGLE

65 V

1 A

1 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G2

e3

3

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

250

N-CHANNEL

20 W

Not Qualified

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

30

AMPLIFIER

SILICON