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Microchip Technology Power Field Effect Transistors (FET) 13

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
MSCSM120AM027CD3AG by Microchip Technology

MSCSM120AM027CD3AG

Microchip Technology

MSCSM120AM027CD3AG by Microchip Technology is a N-CHANNEL FET with 1200V DS breakdown voltage. It features 2 elements in series connected configuration for switching applications. With max IDM of 1400A and ID of 733A, it operates in enhancement mode with 0.0035 ohm RDS(on) and withstands up to 175°C temperature.

ISOLATED

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

1200 V

733 A

733 A

.0035 ohm

METAL-OXIDE SEMICONDUCTOR

.23 pF

R-XUFM-X7

2

7

ENHANCEMENT MODE

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

2970 W

1400 A

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON CARBIDE

APT1003RSFLLG/TR by Microchip Technology

APT1003RSFLLG/TR

Microchip Technology

Microchip Technology's APT1003RSFLLG/TR is an N-CHANNEL Power FET with 1000V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a 16A IDM and 425mJ EAS. Operating in ENHANCEMENT MODE, this FET has a max temperature of 150°C and -55°C min, making it suitable for various industrial uses.

425 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

1000 V

4 A

3 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

1

2

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

16 A

YES

GULL WING

SINGLE

SWITCHING

SILICON

TC8020K6-G-M937 by Microchip Technology

TC8020K6-G-M937

Microchip Technology

TC8020K6-G-M937 by Microchip is a complex N- and P-channel FET for switching applications. It operates in enhancement mode with 200V DS breakdown voltage, 8 ohm RDS(on), and 25ns turn-on time. Ideal for high-temperature environments, it features a max operating temperature of 150°C and -55°C min operating temperature.

COMPLEX

200 V

8 ohm

METAL-OXIDE SEMICONDUCTOR

7 pF

S-XQCC-N56

6

56

ENHANCEMENT MODE

150 Cel

-55 Cel

UNSPECIFIED

SQUARE

CHIP CARRIER

N-CHANNEL AND P-CHANNEL

YES

NO LEAD

QUAD

SWITCHING

SILICON

35 ns

25 ns

MSCSM70VM19C3AG by Microchip Technology

MSCSM70VM19C3AG

Microchip Technology

MSCSM70VM19C3AG by Microchip is an N-CHANNEL FET with 700V DS breakdown voltage, ideal for switching applications. It features 2 elements with built-in diode and SCR in a series connected configuration. With a max pulsed drain current of 250A and operating temperature up to 150°C, it offers high power dissipation capabilities.

ISOLATED

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND SCR

700 V

124 A

124 A

.019 ohm

METAL-OXIDE SEMICONDUCTOR

29 pF

R-XUFM-X25

2

25

ENHANCEMENT MODE

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

365 W

250 A

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON CARBIDE

MSC035SMA170S by Microchip Technology

MSC035SMA170S

Microchip Technology

MSC035SMA170S by Microchip Technology is a N-CHANNEL FET with 1700V DS breakdown voltage, ideal for switching applications. It features a max IDM of 200A and 0.045 ohm RDS(on), operating in enhancement mode. With a package style of small outline, it utilizes silicon carbide technology for high power dissipation up to 278W at 175°C.

DRAIN

SINGLE WITH BUILT-IN DIODE

1700 V

59 A

.045 ohm

METAL-OXIDE SEMICONDUCTOR

10 pF

TO-268AA

R-PSSO-G2

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

278 W

200 A

YES

GULL WING

SINGLE

SWITCHING

SILICON CARBIDE

MSC017SMA120J by Microchip Technology

MSC017SMA120J

Microchip Technology

MSC017SMA120J by Microchip is a N-CHANNEL FET with 1200V DS breakdown voltage, 280A IDM, and 3500mJ EAS. Ideal for switching applications due to its single configuration with built-in diode. Operating in enhancement mode, it offers 0.022 ohm RDS(on) and can handle up to 175°C operating temperature.

3500 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

1200 V

88 A

88 A

.022 ohm

METAL-OXIDE SEMICONDUCTOR

12 pF

R-PUFM-X4

1

3

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

278 W

280 A

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON CARBIDE

MSC017SMA120B4 by Microchip Technology

MSC017SMA120B4

Microchip Technology

MSC017SMA120B4 by Microchip is a N-CHANNEL FET with 1200V DS breakdown voltage. It has a max drain current of 113A and operates in enhancement mode for switching applications. The transistor features a built-in diode, can handle up to 280A pulsed drain current, and dissipates up to 455W power.

DRAIN

SINGLE WITH BUILT-IN DIODE

1200 V

113 A

113 A

.022 ohm

METAL-OXIDE SEMICONDUCTOR

12 pF

TO-247

R-PSFM-T4

1

4

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

455 W

280 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON CARBIDE

MSCSM170HM12CAG by Microchip Technology

MSCSM170HM12CAG

Microchip Technology

MSCSM170HM12CAG by Microchip is an N-CHANNEL FET with 1700V DS breakdown voltage, ideal for switching applications. It features 4 elements, 360A IDM, and 0.015 ohm max drain-source resistance. With a max power dissipation of 843W and operating temperature range from -40 to 175 °C, it offers high performance in complex configurations.

ISOLATED

COMPLEX

1700 V

179 A

.015 ohm

METAL-OXIDE SEMICONDUCTOR

30 pF

R-XUFM-X12

4

12

ENHANCEMENT MODE

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

843 W

360 A

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON CARBIDE

MSCSM170HM23CT3AG by Microchip Technology

MSCSM170HM23CT3AG

Microchip Technology

MSCSM170HM23CT3AG by Microchip Technology is a N-CHANNEL Power FET with 4 elements in a bridge configuration. It operates in enhancement mode for switching applications, offering a min DS breakdown voltage of 1700V and max pulsed drain current of 240A. Ideal for high-power systems requiring efficient and reliable performance at temperatures ranging from -40 to 175°C.

ISOLATED

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

1700 V

124 A

.0225 ohm

METAL-OXIDE SEMICONDUCTOR

20 pF

R-XUFM-X25

4

25

ENHANCEMENT MODE

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

240 A

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON CARBIDE

MSCSM170HM45CT3AG by Microchip Technology

MSCSM170HM45CT3AG

Microchip Technology

MSCSM170HM45CT3AG by Microchip is a N-CHANNEL FET with 4 elements in bridge configuration. It operates in enhancement mode for switching applications, with a min DS breakdown voltage of 1700V and max pulsed drain current of 130A. This power FET features silicon carbide material, 0.045 ohm max drain-source resistance, and can operate b/w -40 to 175 °C.

ISOLATED

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE

1700 V

64 A

.045 ohm

METAL-OXIDE SEMICONDUCTOR

10 pF

R-XUFM-X25

4

25

ENHANCEMENT MODE

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

130 A

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON CARBIDE

MSCSM170AM11CT3AG by Microchip Technology

MSCSM170AM11CT3AG

Microchip Technology

MSCSM170AM11CT3AG by Microchip Technology is a N-CHANNEL FET with 1700V DS Breakdown Voltage, 480A IDM, and 0.0113 ohm RDS(on). It is used for SWITCHING applications in SERIES CONNECTED configuration. Operating from -40 to 175 °C, it features METAL-OXIDE SEMICONDUCTOR technology and SILICON CARBIDE material.

ISOLATED

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

1700 V

240 A

.0113 ohm

METAL-OXIDE SEMICONDUCTOR

40 pF

R-XUFM-X25

2

25

ENHANCEMENT MODE

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

480 A

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON CARBIDE

MSC080SMA330B4 by Microchip Technology

MSC080SMA330B4

Microchip Technology

MSC080SMA330B4 by Microchip is a N-CHANNEL FET with 3300V DS breakdown voltage, ideal for switching applications. It features a max IDM of 100A and 0.105 ohm RDS(on), operating in enhancement mode. With a package style of FLANGE MOUNT, it can handle up to 381W power dissipation at temperatures ranging from -55 to 150 °C.

DRAIN

SINGLE WITH BUILT-IN DIODE

3300 V

41 A

.105 ohm

METAL-OXIDE SEMICONDUCTOR

4 pF

TO-247

R-PSFM-T4

1

4

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

381 W

100 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

MSC400SMA330B4 by Microchip Technology

MSC400SMA330B4

Microchip Technology

MSC400SMA330B4 by Microchip Technology is a N-CHANNEL FET with 3300V DS breakdown voltage and 27A IDM. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 131W. The transistor features a drain-source on resistance of 0.52 ohm and can withstand temperatures from -55 to 150 °C.

DRAIN

SINGLE WITH BUILT-IN DIODE

3300 V

11 A

.52 ohm

METAL-OXIDE SEMICONDUCTOR

2 pF

TO-247

R-PSFM-T4

1

4

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

131 W

27 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON CARBIDE