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Alpha & Omega Semiconductor Power Field Effect Transistors (FET) 47

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
AO4413L by Alpha & Omega Semiconductor

AO4413L

Alpha & Omega Semiconductor

AO4413L by Alpha & Omega Semiconductor is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM, 15A ID, 0.0085 ohm RDS(on), and operates in ENHANCEMENT MODE. With GULL WING terminals and RECTANGULAR package shape, it's designed for high-power efficiency in various electronic systems.

SINGLE WITH BUILT-IN DIODE

30 V

15 A

15 A

.0085 ohm

METAL-OXIDE SEMICONDUCTOR

1067 pF

R-PDSO-G8

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

3 W

3 W

80 A

YES

GULL WING

DUAL

SWITCHING

SILICON

AO3422L by Alpha & Omega Semiconductor

AO3422L

Alpha & Omega Semiconductor

AO3422L by Alpha & Omega Semiconductor is a N-CHANNEL FET with 55V DS Breakdown Voltage and 10A IDM. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating from -55 to 150 °C, it has 0.16 ohm Drain-Source On Resistance.

SINGLE WITH BUILT-IN DIODE

55 V

2.1 A

2.1 A

.16 ohm

METAL-OXIDE SEMICONDUCTOR

12.6 pF

TO-236

R-PDSO-G3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

1.25 W

1.25 W

10 A

YES

GULL WING

DUAL

SWITCHING

SILICON

AO4822A by Alpha & Omega Semiconductor

AO4822A

Alpha & Omega Semiconductor

AO4822A by Alpha & Omega Semiconductor is an N-CHANNEL FET with 8A ID and 2W power dissipation. Ideal for applications requiring high drain current and operating at up to 150°C, such as power management systems in various electronic devices.

8 A

8 A

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

150 Cel

N-CHANNEL

2 W

FET General Purpose Power

YES

AO4822AL by Alpha & Omega Semiconductor

AO4822AL

Alpha & Omega Semiconductor

AO4822AL by Alpha & Omega Semiconductor is an N-CHANNEL FET with 8.5A max drain current and 2W power dissipation. Ideal for applications requiring high power efficiency, it operates in enhancement mode at up to 150°C, making it suitable for various power management systems.

8.5 A

8.5 A

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

150 Cel

N-CHANNEL

2 W

FET General Purpose Power

YES

AON7408 by Alpha & Omega Semiconductor

AON7408

Alpha & Omega Semiconductor

AON7408 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 18A ID and 11W power dissipation. Ideal for applications requiring high drain current and low power consumption in surface mount configurations, such as power supplies and motor control systems operating at up to 150°C.

SINGLE

18 A

18 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

11 W

FET General Purpose Power

YES

AO4490L by Alpha & Omega Semiconductor

AO4490L

Alpha & Omega Semiconductor

AO4490L by Alpha & Omega Semiconductor is a N-CHANNEL FET with 30V DS Breakdown Voltage and 120A IDM. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it has a max power dissipation of 2.8W and can handle up to 16A drain current.

SINGLE WITH BUILT-IN DIODE

30 V

16 A

.0072 ohm

METAL-OXIDE SEMICONDUCTOR

238 pF

R-PDSO-G8

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

2.8 W

2.8 W

120 A

YES

GULL WING

DUAL

SWITCHING

SILICON

AO4614BL by Alpha & Omega Semiconductor

AO4614BL

Alpha & Omega Semiconductor

AO4614BL by Alpha & Omega Semiconductor is a Power FET with N/P-Channel, 2 elements w/ diode. It has 40V DS breakdown voltage, 40A IDM, and 0.03 ohm RDS(on). Ideal for switching applications in small outline packages with Gull Wing terminals.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

40 V

6 A

.03 ohm

METAL-OXIDE SEMICONDUCTOR

43 pF

R-PDSO-G8

2

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL AND P-CHANNEL

2 W

2 W

40 A

YES

GULL WING

DUAL

SWITCHING

SILICON

AOTF4N60 by Alpha & Omega Semiconductor

AOTF4N60

Alpha & Omega Semiconductor

AOTF4N60 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 4A max drain current and 35W power dissipation. It operates in enhancement mode with a max temperature of 150°C. Ideal for power applications requiring high efficiency and performance.

SINGLE

4 A

4 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

35 W

FET General Purpose Power

NO

AOTF5N50 by Alpha & Omega Semiconductor

AOTF5N50

Alpha & Omega Semiconductor

AOTF5N50 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 500V DS Breakdown Voltage. It has 18A IDM and 203mJ EAS, suitable for power applications requiring high drain current and energy ratings. Ideal for use in circuits where low on-resistance and fast switching times are critical.

203 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

500 V

5 A

5 A

1.5 ohm

METAL-OXIDE SEMICONDUCTOR

5.9 pF

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

35 W

18 A

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SILICON

70.4 ns

52.4 ns

AOTF7N65 by Alpha & Omega Semiconductor

AOTF7N65

Alpha & Omega Semiconductor

AOTF7N65 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 24A IDM, 347mJ EAS, and 1.56ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max temp of 150°C and fast switching times (ton:97ns, toff:128ns).

347 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

650 V

7 A

7 A

1.56 ohm

METAL-OXIDE SEMICONDUCTOR

9 pF

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

38.5 W

24 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

128 ns

97 ns

AOT480L by Alpha & Omega Semiconductor

AOT480L

Alpha & Omega Semiconductor

AOT480L by Alpha & Omega Semiconductor is a N-CHANNEL FET with 180A ID and 333W power dissipation. Ideal for high-power applications, it operates in enhancement mode at up to 175°C, making it suitable for demanding industrial and automotive systems.

SINGLE

180 A

180 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

175 Cel

N-CHANNEL

333 W

FET General Purpose Power

NO

AOTF9N70 by Alpha & Omega Semiconductor

AOTF9N70

Alpha & Omega Semiconductor

AOTF9N70 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 700V DS Breakdown Voltage, ideal for SWITCHING applications. It features 33A IDM, 154mJ EAS, and 1.2ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max power dissipation of 50W and can withstand temperatures from -55 to 150°C.

154 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

700 V

9 A

1.2 ohm

METAL-OXIDE SEMICONDUCTOR

11 pF

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

50 W

33 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

AOD5N50 by Alpha & Omega Semiconductor

AOD5N50

Alpha & Omega Semiconductor

AOD5N50 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 17A Pulsed Drain Current, 235mJ Avalanche Energy Rating, and 1.6ohm Drain-Source On Resistance. Suitable for high-power operations in various electronic devices.

235 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

500 V

5 A

5 A

1.6 ohm

METAL-OXIDE SEMICONDUCTOR

7 pF

TO-252

R-PSSO-G2

1

2

ENHANCEMENT MODE

150 Cel

-50 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

104 W

17 A

YES

GULL WING

SINGLE

SWITCHING

SILICON

AOI4126 by Alpha & Omega Semiconductor

AOI4126

Alpha & Omega Semiconductor

AOI4126 by Alpha & Omega Semiconductor is a N-CHANNEL Power FET with 43A ID and 100W power dissipation. It operates in enhancement mode with a max temp of 175°C. Ideal for high-power applications requiring efficient switching capabilities.

SINGLE

43 A

43 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

175 Cel

N-CHANNEL

100 W

FET General Purpose Powers

NO

AOB10N60L by Alpha & Omega Semiconductor

AOB10N60L

Alpha & Omega Semiconductor

AOB10N60L by Alpha & Omega Semiconductor is a N-CHANNEL FET with 10A max drain current and 250W power dissipation. It operates in enhancement mode, suitable for high-power applications like motor control and power supplies due to its single configuration and surface mount capability.

SINGLE

10 A

10 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

250 W

FET General Purpose Power

YES

AOW4S60 by Alpha & Omega Semiconductor

AOW4S60

Alpha & Omega Semiconductor

AOW4S60 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 4A max drain current and 83W power dissipation. Ideal for applications requiring high power efficiency in enhancement mode operation, such as power supplies and motor control systems.

SINGLE

4 A

4 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

83 W

FET General Purpose Power

NO

AOWF4S60 by Alpha & Omega Semiconductor

AOWF4S60

Alpha & Omega Semiconductor

AOWF4S60 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 4A max drain current and 25W power dissipation. Ideal for applications requiring high power efficiency in enhancement mode operation, such as power supplies and motor control systems.

SINGLE

4 A

4 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

25 W

FET General Purpose Power

NO

AOB1608L by Alpha & Omega Semiconductor

AOB1608L

Alpha & Omega Semiconductor

AOB1608L by Alpha & Omega Semiconductor is an N-CHANNEL Power FET with a 60V DS Breakdown Voltage. It features a built-in diode, 256A IDM, and 0.0073 ohm RDS(on), making it ideal for SWITCHING applications. With a max power dissipation of 333W and operating temperature range from -55 to 175 °C, this MOSFET is suitable for high-power electronic systems.

638 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

140 A

11 A

.0073 ohm

METAL-OXIDE SEMICONDUCTOR

80 pF

TO-263AB

R-PSSO-G2

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

333 W

256 A

YES

GULL WING

SINGLE

SWITCHING

SILICON

AOD4454 by Alpha & Omega Semiconductor

AOD4454

Alpha & Omega Semiconductor

AOD4454 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. It features 40A Max Pulsed Drain Current and 0.11 ohm Max Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it has a max power dissipation of 100W and can withstand temperatures from -55 to 175 °C.

1.3 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

150 V

20 A

20 A

.11 ohm

METAL-OXIDE SEMICONDUCTOR

31 pF

TO-252

R-PSSO-G2

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

100 W

40 A

YES

GULL WING

SINGLE

SWITCHING

SILICON

AOTF240L by Alpha & Omega Semiconductor

AOTF240L

Alpha & Omega Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 41 W; Maximum Drain Current (ID): 85 A; No. of Elements: 1;

SINGLE

85 A

85 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

175 Cel

N-CHANNEL

41 W

FET General Purpose Power

NO

AOB290L by Alpha & Omega Semiconductor

AOB290L

Alpha & Omega Semiconductor

AOB290L by Alpha & Omega Semiconductor is a N-CHANNEL FET with 140A ID and 500W power dissipation. Ideal for applications requiring high drain current and power, such as power supplies or motor control systems. Operating in enhancement mode, it can handle up to 175°C temperature.

SINGLE

140 A

140 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

175 Cel

N-CHANNEL

500 W

FET General Purpose Power

YES

AON6234 by Alpha & Omega Semiconductor

AON6234

Alpha & Omega Semiconductor

AON6234 by Alpha & Omega Semiconductor is a N-CHANNEL power FET with a min DS breakdown voltage of 40V. It has a max pulsed drain current of 220A and an avalanche energy rating of 125mJ. This transistor is commonly used for switching applications.

125 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

85 A

85 A

.005 ohm

METAL-OXIDE SEMICONDUCTOR

77 pF

R-PDSO-F8

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

83 W

220 A

YES

FLAT

DUAL

SWITCHING

SILICON

AON6411 by Alpha & Omega Semiconductor

AON6411

Alpha & Omega Semiconductor

AON6411 by Alpha & Omega Semiconductor is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 340A IDM and 245mJ EAS, operating in ENHANCEMENT MODE at -55 to 150 °C. The METAL-OXIDE SEMICONDUCTOR technology ensures 0.0036 ohm RDS(ON) and 1395pF Crss for efficient performance.

245 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

20 V

85 A

.0036 ohm

METAL-OXIDE SEMICONDUCTOR

1395 pF

R-PDSO-F8

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

156 W

340 A

YES

FLAT

DUAL

SWITCHING

SILICON

AON7242 by Alpha & Omega Semiconductor

AON7242

Alpha & Omega Semiconductor

AON7242 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 255A and EAS of 115mJ, suitable for high-power operations. With an operating temperature range from -55 to 150 °C, it offers reliable performance in various environments.

115 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

50 A

50 A

.0058 ohm

METAL-OXIDE SEMICONDUCTOR

70 pF

S-PDSO-N8

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

N-CHANNEL

83 W

255 A

YES

NO LEAD

DUAL

SWITCHING

SILICON

AOTF12N30 by Alpha & Omega Semiconductor

AOTF12N30

Alpha & Omega Semiconductor

AOTF12N30 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 300V DS Breakdown Voltage, ideal for SWITCHING applications. It features 29A IDM and 430mJ EAS, operating in ENHANCEMENT MODE. With a max power dissipation of 36W and -55 to 150 °C temperature range, it offers reliable performance in various electronic systems.

430 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

300 V

11.5 A

.42 ohm

METAL-OXIDE SEMICONDUCTOR

11 pF

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

36 W

29 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

AOT284L by Alpha & Omega Semiconductor

AOT284L

Alpha & Omega Semiconductor

AOT284L by Alpha & Omega Semiconductor is a N-CHANNEL Power FET with 80V DS Breakdown Voltage, ideal for SWITCHING applications. It features 400A IDM, 211mJ EAS, and 0.0057 ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max power dissipation of 150W and can withstand temperatures from -55 to 175 °C.

211 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

80 V

105 A

.0057 ohm

METAL-OXIDE SEMICONDUCTOR

48 pF

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

150 W

400 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

AOTF5N50FD by Alpha & Omega Semiconductor

AOTF5N50FD

Alpha & Omega Semiconductor

AOTF5N50FD by Alpha & Omega Semiconductor is a N-CHANNEL FET with 5A ID and 35W power dissipation. Ideal for applications requiring high drain current and low power consumption, such as power supplies and motor control systems operating at temperatures up to 150°C.

SINGLE

5 A

5 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

35 W

FET General Purpose Power

NO

AOD2N100 by Alpha & Omega Semiconductor

AOD2N100

Alpha & Omega Semiconductor

AOD2N100 by Alpha & Omega Semiconductor is a single N-channel power FET with 2A max drain current and 83W max power dissipation. Ideal for applications requiring high efficiency in enhancement mode operation, such as power supplies and motor control systems.

SINGLE

2 A

2 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

83 W

FET General Purpose Power

YES

AO3414L by Alpha & Omega Semiconductor

AO3414L

Alpha & Omega Semiconductor

AO3414L by Alpha & Omega Semiconductor is an N-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 30A IDM, 0.05 ohm RDS(on), and ENHANCEMENT MODE operation. Its PLASTIC/EPOXY package with GULL WING terminals makes it suitable for surface mount designs.

SINGLE WITH BUILT-IN DIODE

20 V

4.2 A

.05 ohm

METAL-OXIDE SEMICONDUCTOR

TO-236

R-PDSO-G3

1

3

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

30 A

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

AOTF4S60 by Alpha & Omega Semiconductor

AOTF4S60

Alpha & Omega Semiconductor

AOTF4S60 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 600V DS Breakdown Voltage. It has a max IDM of 16A and 0.9 ohm RDS(ON). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation, it comes in a RECTANGULAR package style suitable for FLANGE MOUNTing.

77 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

600 V

4 A

.9 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

16 A

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

AOD409 by Alpha & Omega Semiconductor

AOD409

Alpha & Omega Semiconductor

AOD409 by Alpha & Omega Semiconductor is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 26A Max Drain Current, 0.055 ohm Max RDS(ON), and 60A IDM. The PLASTIC/EPOXY package with GULL WING terminals makes it suitable for ENHANCEMENT MODE operation in surface mount designs.

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

26 A

.055 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

1

2

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

P-CHANNEL

60 A

YES

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

AOD4N60 by Alpha & Omega Semiconductor

AOD4N60

Alpha & Omega Semiconductor

AOD4N60 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Features include 14A max pulsed drain current, 235mJ avalanche energy rating, and 2.3ohm max drain-source resistance. Suitable for enhancement mode operation in high-power circuits.

235 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

4 A

4 A

2.3 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

104 W

14 A

FET General Purpose Power

YES

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

AO6402AL by Alpha & Omega Semiconductor

AO6402AL

Alpha & Omega Semiconductor

AO6402AL by Alpha & Omega Semiconductor is a N-CHANNEL FET with 30V DS Breakdown Voltage and 0.027 ohm RDS(ON). Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, this MOSFET has 30A IDM and GULL WING terminals.

SINGLE WITH BUILT-IN DIODE

30 V

.027 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

1

6

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

30 A

Not Qualified

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

AO6402A by Alpha & Omega Semiconductor

AO6402A

Alpha & Omega Semiconductor

AO6402A by Alpha & Omega Semiconductor is a N-CHANNEL FET with 30V DS Breakdown Voltage and 0.027 ohm RDS(ON). It's used for SWITCHING applications in ENHANCEMENT MODE, featuring 30A IDM and built-in DIODE. Ideal for surface mount designs due to GULL WING terminals and SMALL OUTLINE package style.

SINGLE WITH BUILT-IN DIODE

30 V

.027 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

1

6

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

30 A

Not Qualified

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

AOTF7S65 by Alpha & Omega Semiconductor

AOTF7S65

Alpha & Omega Semiconductor

AOTF7S65 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 7A max drain current and 35W power dissipation. Ideal for high-power applications, it operates at up to 150°C. Its single configuration makes it suitable for various power management systems.

SINGLE

7 A

7 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

N-CHANNEL

35 W

FET General Purpose Power

NO

NOT SPECIFIED

AOD32326 by Alpha & Omega Semiconductor

AOD32326

Alpha & Omega Semiconductor

Power Field-Effect Transistors;

AOK42S60L by Alpha & Omega Semiconductor

AOK42S60L

Alpha & Omega Semiconductor

AOK42S60L by Alpha & Omega Semiconductor is a N-CHANNEL FET with 39A ID and 417W power dissipation. Ideal for high-power applications, it operates at up to 150°C, making it suitable for demanding environments requiring efficient power management.

SINGLE

39 A

39 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

N-CHANNEL

417 W

FET General Purpose Power

NO

NOT SPECIFIED

AOD4185L by Alpha & Omega Semiconductor

AOD4185L

Alpha & Omega Semiconductor

AOD4185L by Alpha & Omega Semiconductor is a P-CHANNEL FET with 40V DS Breakdown Voltage, 115A IDM, and 0.015 ohm RDS(on). Ideal for power management applications in small outline packages. Operating in enhancement mode, it features a built-in diode and GULL WING terminals.

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

40 A

.015 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

e3

1

2

ENHANCEMENT MODE

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

115 A

YES

TIN

GULL WING

SINGLE

SILICON

AOT14N50FD by Alpha & Omega Semiconductor

AOT14N50FD

Alpha & Omega Semiconductor

AOT14N50FD by Alpha & Omega Semiconductor is a N-CHANNEL FET with 14 A max drain current and 278 W power dissipation. Ideal for high-power applications, it operates at up to 150°C.

SINGLE

14 A

14 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

N-CHANNEL

278 W

FET General Purpose Power

NO

NOT SPECIFIED

AO3400 by Alpha & Omega Semiconductor

AO3400

Alpha & Omega Semiconductor

AO3400 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 30V DS Breakdown Voltage and 5.8A ID. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE, GULL WING terminals, and operates in ENHANCEMENT MODE.

SINGLE WITH BUILT-IN DIODE

30 V

5.8 A

.028 ohm

METAL-OXIDE SEMICONDUCTOR

50 pF

R-PDSO-G3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

1.4 W

30 A

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

AOD609G by Alpha & Omega Semiconductor

AOD609G

Alpha & Omega Semiconductor

AOD609G by Alpha & Omega Semiconductor is a Power FET with N/P-Channel, 2 elements, built-in diode. It has 40V DS Breakdown Voltage, 30A IDM, and 0.03 ohm RDS(on). Ideal for switching applications in small outline packages with Gull Wing terminals.

DRAIN

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

40 V

12 A

12 A

.03 ohm

METAL-OXIDE SEMICONDUCTOR

40 pF

TO-252

R-PSSO-G4

2

4

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL AND P-CHANNEL

2 W

27 W

30 A

YES

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

AONS62614 by Alpha & Omega Semiconductor

AONS62614

Alpha & Omega Semiconductor

AONS62614 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 320A IDM, 265mJ EAS, and 0.0034 ohm RDS(ON). Operating from -55 to 150 °C, it has a max power dissipation of 119W in a SMALL OUTLINE package.

265 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

100 A

100 A

.0034 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

1

5

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

119 W

320 A

YES

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

AONS66402 by Alpha & Omega Semiconductor

AONS66402

Alpha & Omega Semiconductor

AONS66402 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 40V DS Breakdown Voltage, 340A IDM, and 0.0023 ohm RDS. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating range from -55 to 150 °C makes it suitable for various power management needs.

406 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

85 A

85 A

.0023 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

1

1

5

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

119 W

340 A

YES

FLAT

DUAL

SWITCHING

SILICON

AOCR32326 by Alpha & Omega Semiconductor

AOCR32326

Alpha & Omega Semiconductor

AOCR32326 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 30V DS Breakdown Voltage, 130A IDM, and 0.0042 ohm RDS. It is used for SWITCHING applications in COMMON DRAIN configuration. Operating temp range: -55 to 150 °C.

SOURCE

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

28 A

.0042 ohm

METAL-OXIDE SEMICONDUCTOR

R-XBCC-N8

2

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

N-CHANNEL

2.75 W

130 A

YES

NO LEAD

BOTTOM

SWITCHING

SILICON

AON7140 by Alpha & Omega Semiconductor

AON7140

Alpha & Omega Semiconductor

AON7140 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features 550A IDM, 135mJ EAS, and 0.0035 ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max temp of 150°C and -55°C min temp.

135 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

148 A

148 A

.0035 ohm

METAL-OXIDE SEMICONDUCTOR

65 pF

S-PDSO-N8

1

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

N-CHANNEL

89 W

550 A

YES

NO LEAD

DUAL

SWITCHING

SILICON

AOB66518L by Alpha & Omega Semiconductor

AOB66518L

Alpha & Omega Semiconductor

Power Field-Effect Transistors;

AOY423 by Alpha & Omega Semiconductor

AOY423

Alpha & Omega Semiconductor

Power Field-Effect Transistors;