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95 W Power Field Effect Transistors (FET) 13

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
BUZ31H3046XKSA1 by Infineon Technologies

BUZ31H3046XKSA1

Infineon Technologies

Infineon BUZ31H3046XKSA1 is a N-CHANNEL FET with 200V DS Breakdown Voltage, 58A IDM, and 0.2 ohm RDS. Ideal for power applications requiring high current handling and low on-resistance in a TO-220 package.

AVALANCHE RATED

200 mJ

SINGLE WITH BUILT-IN DIODE

200 V

14.5 A

.2 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

95 W

58 A

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SILICON

2SK3353(0)-Z-E1-AZ by Renesas Electronics

2SK3353(0)-Z-E1-AZ

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 95 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

SINGLE

82 A

82 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

N-CHANNEL

95 W

FET General Purpose Power

YES

NOT SPECIFIED

2SK3353-Z-E1-AZ by Renesas Electronics

2SK3353-Z-E1-AZ

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 95 W; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Operating Temperature: 150 Cel;

SINGLE

82 A

82 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

N-CHANNEL

95 W

FET General Purpose Power

YES

NOT SPECIFIED

STD90N03L-1 by STMicroelectronics

STD90N03L-1

STMicroelectronics

STD90N03L-1 by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a max drain current of 80 A and a breakdown voltage of 30 V. It offers low on-resistance at 0.0057 Ω and operates up to 175 °C. This versatile FET is packaged in a through-hole design for easy integration.

LOW THRESHOLD

350 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

80 A

80 A

.0057 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251

R-PSIP-T3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

N-CHANNEL

95 W

320 A

Not Qualified

FET General Purpose Power

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STD90N03L by STMicroelectronics

STD90N03L

STMicroelectronics

STD90N03L by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for power management in compact electronic devices.

LOW THRESHOLD

350 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

80 A

80 A

.0057 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

95 W

320 A

Not Qualified

FET General Purpose Power

YES

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

PD85035-E by STMicroelectronics

PD85035-E

STMicroelectronics

PD85035-E by STMicroelectronics is an N-channel FET designed for amplification applications. It features a max drain current of 8 A, a breakdown voltage of 40 V, and operates at up to 165 °C. Ideal for compact power management in surface mount designs.

HIGH RELIABILITY

SOURCE

SINGLE

40 V

8 A

8 A

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G2

e3

3

1

2

ENHANCEMENT MODE

165 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

95 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

AMPLIFIER

SILICON

PD85035S-E by STMicroelectronics

PD85035S-E

STMicroelectronics

PD85035S-E by STMicroelectronics is an N-channel FET designed for amplification applications. It features a max drain current of 8 A, a breakdown voltage of 40 V, and operates at up to 165 °C. Ideal for compact power management in surface mount designs.

SOURCE

SINGLE

40 V

8 A

8 A

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F2

e3

3

1

2

ENHANCEMENT MODE

165 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

95 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

AMPLIFIER

SILICON

PD85035STR-E by STMicroelectronics

PD85035STR-E

STMicroelectronics

PD85035STR-E by STMicroelectronics is an N-channel FET designed for amplification applications. It features a max drain current of 8 A, a breakdown voltage of 40 V, and operates at up to 165 °C. This compact surface mount transistor ensures efficient power management in electronic circuits.

SOURCE

SINGLE

40 V

8 A

8 A

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F2

1

2

ENHANCEMENT MODE

165 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

95 W

Not Qualified

FET General Purpose Power

YES

FLAT

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

PD85035TR-E by STMicroelectronics

PD85035TR-E

STMicroelectronics

PD85035TR-E by STMicroelectronics is an N-channel FET designed for amplifier applications. It features a max drain current of 8 A, a breakdown voltage of 40 V, and operates at up to 165 °C. This surface-mount transistor ensures efficient power management in compact designs.

SOURCE

SINGLE

40 V

8 A

8 A

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G2

1

2

ENHANCEMENT MODE

165 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

95 W

Not Qualified

FET General Purpose Power

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

BUZ31LH by Infineon Technologies

BUZ31LH

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 95 W; JEDEC-95 Code: TO-220AB; Operating Mode: ENHANCEMENT MODE;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

200 mJ

SINGLE WITH BUILT-IN DIODE

200 V

13.5 A

.2 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

95 W

54 A

Not Qualified

FET General Purpose Power

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SILICON

STD90NH02LT4 by STMicroelectronics

STD90NH02LT4

STMicroelectronics

STD90NH02LT4 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 60 A, a breakdown voltage of 24 V, and operates at up to 175 °C. Ideal for power management in compact electronic devices.

LOW THRESHOLD

600 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

24 V

60 A

60 A

.006 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

95 W

240 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

BUZ31H3045A by Infineon Technologies

BUZ31H3045A

Infineon Technologies

Infineon's BUZ31H3045A is a N-CHANNEL FET with 200V DS Breakdown Voltage, 58A IDM, and 0.2 ohm RDS. Ideal for power applications requiring up to 95W dissipation in enhancement mode operation. Package style is small outline with gull wing terminals for surface mount assembly at max temp of 150°C.

AVALANCHE RATED

200 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

200 V

14.5 A

14.5 A

.2 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

95 W

58 A

Not Qualified

FET General Purpose Power

YES

GULL WING

SINGLE

SILICON

FDD3682-F085 by Onsemi

FDD3682-F085

Onsemi

FDD3682-F085 by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 32A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a max power dissipation of 95W.

55 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

32 A

5.5 A

.036 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

95 W

Not Qualified

AEC-Q101

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON