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74 W Power Field Effect Transistors (FET) 6

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NDD60N900U1-1G by Onsemi

NDD60N900U1-1G

Onsemi

NDD60N900U1-1G by Onsemi is a N-channel FET with 5.9A max drain current and 74W power dissipation. Ideal for power applications, it operates up to 150°C, making it suitable for high-temperature environments requiring efficient power management.

SINGLE

5.9 A

5.9 A

METAL-OXIDE SEMICONDUCTOR

e3

3

1

150 Cel

260

N-CHANNEL

74 W

FET General Purpose Power

NO

TIN

30

NDD60N900U1T4G by Onsemi

NDD60N900U1T4G

Onsemi

NDD60N900U1T4G by Onsemi is an N-CHANNEL FET with 5.9A max drain current and 74W max power dissipation. Ideal for power applications, it operates at up to 150°C and features surface mount configuration for efficient installation in various electronic devices.

SINGLE

5.9 A

5.9 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

150 Cel

260

N-CHANNEL

74 W

FET General Purpose Power

YES

TIN

30

NXH040P120MNF1PG by Onsemi

NXH040P120MNF1PG

Onsemi

NXH040P120MNF1PG by Onsemi is an N-CHANNEL FET with 1200V DS breakdown voltage and 74A IDM. Ideal for switching applications, it features a package style of FLANGE MOUNT, operating temperature range of -40 to 175 °C, and 0.056 ohm max drain-source resistance.

ISOLATED

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

1200 V

30 A

.056 ohm

METAL-OXIDE SEMICONDUCTOR

12 pF

R-XUFM-X18

2

18

ENHANCEMENT MODE

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

74 W

74 A

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON CARBIDE

FDMS1D4N03S by Onsemi

FDMS1D4N03S

Onsemi

FDMS1D4N03S by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 211A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 1140A Pulsed Drain Current, and operates in ENHANCEMENT MODE. Suitable for surface mount with a max power dissipation of 74W.

384 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

211 A

211 A

.00109 ohm

METAL-OXIDE SEMICONDUCTOR

180 pF

MO-240AA

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

74 W

1140 A

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

92 ns

45 ns

NXH040F120MNF1PTG by Onsemi

NXH040F120MNF1PTG

Onsemi

NXH040F120MNF1PTG by Onsemi is a N-CHANNEL Power FET with 1200V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring a BRIDGE configuration with 4 elements, it has a max IDM of 90A and 0.056 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, this FET utilizes SILICON CARBIDE technology and can handle temperatures from -40 to 175 °C.

ISOLATED

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

1200 V

30 A

.056 ohm

METAL-OXIDE SEMICONDUCTOR

12 pF

R-XUFM-X22

4

22

ENHANCEMENT MODE

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

74 W

90 A

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SWITCHING

SILICON CARBIDE

NXH040F120MNF1PG by Onsemi

NXH040F120MNF1PG

Onsemi

NXH040F120MNF1PG by Onsemi is a N-CHANNEL Power FET with 1200V DS Breakdown Voltage, 90A IDM, and 0.056 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE. This RECTANGULAR package has 4 elements with built-in diode and thermistor, ideal for high-power operations up to 175°C.

ISOLATED

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

1200 V

30 A

.056 ohm

METAL-OXIDE SEMICONDUCTOR

12 pF

R-XUFM-X22

4

22

ENHANCEMENT MODE

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

74 W

90 A

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SWITCHING

SILICON CARBIDE