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500 W Power Field Effect Transistors (FET) 12

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
BLF888,112 by NXP Semiconductors

BLF888,112

NXP Semiconductors

BLF888,112 by NXP Semiconductors is a Power FET with N-CHANNEL polarity. It operates in ENHANCEMENT MODE with 500W power dissipation. Ideal for applications requiring high power handling and efficient performance at up to 200°C operating temperature.

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

200 Cel

260

N-CHANNEL

500 W

FET General Purpose Power

30

AOB290L by Alpha & Omega Semiconductor

AOB290L

Alpha & Omega Semiconductor

AOB290L by Alpha & Omega Semiconductor is a N-CHANNEL FET with 140A ID and 500W power dissipation. Ideal for applications requiring high drain current and power, such as power supplies or motor control systems. Operating in enhancement mode, it can handle up to 175°C temperature.

SINGLE

140 A

140 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

175 Cel

N-CHANNEL

500 W

FET General Purpose Power

YES

IPW65R041CFDFKSA1 by Infineon Technologies

IPW65R041CFDFKSA1

Infineon Technologies

IPW65R041CFDFKSA1 by Infineon is a N-CHANNEL FET with 650V DS Breakdown Voltage and 255A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and 0.041 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it has a max power dissipation of 500W at temperatures ranging from -55 to 150 °C.

2185 mJ

SINGLE WITH BUILT-IN DIODE

650 V

68.5 A

68.5 A

.041 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

500 W

255 A

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STE110NS20FD by STMicroelectronics

STE110NS20FD

STMicroelectronics

STE110NS20FD by STMicroelectronics is a N-CHANNEL FET for SWITCHING applications. It features 200V DS Breakdown Voltage, 440A IDM, and 0.024 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 500W and can handle up to 150 °C temperature.

AVALANCHE RATED

750 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

200 V

110 A

110 A

.024 ohm

METAL-OXIDE SEMICONDUCTOR

R-XUFM-X4

1

4

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

500 W

440 A

Not Qualified

FET General Purpose Power

NO

NICKEL

UNSPECIFIED

UPPER

SWITCHING

SILICON

STE250NS10 by STMicroelectronics

STE250NS10

STMicroelectronics

STE250NS10 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 220 A, a breakdown voltage of 100 V, and operates at up to 150 °C. Ideal for high-power circuits with low on-resistance (0.0055 Ω).

800 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

100 V

220 A

220 A

.0055 ohm

METAL-OXIDE SEMICONDUCTOR

R-XUFM-X4

NOT APPLICABLE

1

4

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

500 W

880 A

Not Qualified

FET General Purpose Power

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SWITCHING

SILICON

STW220NF75 by STMicroelectronics

STW220NF75

STMicroelectronics

STW220NF75 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 120 A, breakdown voltage of 75 V, and can handle up to 500 W power dissipation. Ideal for high-efficiency power management in various electronic devices.

2500 mJ

SINGLE WITH BUILT-IN DIODE

75 V

120 A

120 A

.0044 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

500 W

480 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STE140NF20D by STMicroelectronics

STE140NF20D

STMicroelectronics

STE140NF20D by STMicroelectronics is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 140A ID. Ideal for SWITCHING applications, it features a single configuration with built-in diode, 0.012 ohm Drain-Source On Resistance, and 560A Max Pulsed Drain Current.

AVALANCHE ENERGY RATED

800 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

200 V

140 A

140 A

.012 ohm

METAL-OXIDE SEMICONDUCTOR

R-PUFM-X4

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

500 W

560 A

Not Qualified

FET General Purpose Power

NO

NICKEL

UNSPECIFIED

UPPER

SWITCHING

SILICON

NVH4L018N075SC1 by Onsemi

NVH4L018N075SC1

Onsemi

NVH4L018N075SC1 by Onsemi is a N-CHANNEL FET with 750V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 483A and EAS of 162mJ, suitable for high-power operations. With an RDS(on) of 0.018 ohm and operating temperature range from -55 to 175 °C, it offers reliable performance in various environments.

162 mJ

SINGLE WITH BUILT-IN DIODE

750 V

140 A

.018 ohm

METAL-OXIDE SEMICONDUCTOR

31 pF

TO-247

R-PSFM-T4

e3

1

1

4

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

500 W

483 A

AEC-Q101

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON CARBIDE

PCFA86210F by Onsemi

PCFA86210F

Onsemi

PCFA86210F by Onsemi is an N-CHANNEL FET with a 150V DS Breakdown Voltage and 0.0063 ohm Drain-Source On Resistance. Ideal for high-power applications, it operates in Enhancement Mode with a max power dissipation of 500W. AEC-Q101 certified, suitable for automotive and industrial sectors.

502 mJ

SINGLE WITH BUILT-IN DIODE

150 V

169 A

.0063 ohm

METAL-OXIDE SEMICONDUCTOR

16 pF

R-XUUC-N2

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

500 W

AEC-Q101

YES

NO LEAD

UPPER

NOT SPECIFIED

SILICON

NTHL033N65S3HF by Onsemi

NTHL033N65S3HF

Onsemi

NTHL033N65S3HF by Onsemi is a Power FET with 650V DS Breakdown Voltage, 175A IDM, and 0.033 ohm RDS(on). Ideal for switching applications, it operates in Enhancement Mode with a max power dissipation of 500W. The N-CHANNEL transistor has a rectangular package shape and can handle up to 70A drain current.

1250 mJ

SINGLE WITH BUILT-IN DIODE

650 V

70 A

70 A

.033 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

500 W

175 A

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

IRL40T209ATMA1 by Infineon Technologies

IRL40T209ATMA1

Infineon Technologies

Infineon's IRL40T209ATMA1 is a N-CHANNEL FET with 40V DS breakdown voltage and 1200A pulsed drain current, ideal for switching applications. Featuring a built-in diode, it has a low on-resistance of 0.00072 ohm and can handle up to 500W power dissipation. Operating from -55°C to 175°C, this MOSFET is designed for high-power tasks in compact layouts.

875 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

300 A

300 A

.00072 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-F8

e3

1

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

500 W

1200 A

YES

TIN

FLAT

SINGLE

SWITCHING

SILICON

LSIC1MO120G0025 by Littelfuse

LSIC1MO120G0025

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 500 W; Minimum DS Breakdown Voltage: 1200 V; No. of Terminals: 4;

ULTRA LOW RESISTANCE

DRAIN

SINGLE WITH BUILT-IN DIODE

1200 V

100 A

.032 ohm

METAL-OXIDE SEMICONDUCTOR

14 pF

TO-247AD

R-PSFM-T4

1

4

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

500 W

200 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON CARBIDE