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5.2 W Power Field Effect Transistors (FET) 8

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
BUK9MGP-55PTS,518 by NXP Semiconductors

BUK9MGP-55PTS,518

NXP Semiconductors

BUK9MGP-55PTS,518 from NXP Semiconductors is an N-channel power FET designed for enhancement mode operation. It supports a max drain current of 16.9 A and power dissipation of 5.2 W, making it ideal for high-efficiency applications in electronics. With a peak reflow temp of 260 °C, it's suitable for surface mount technology.

16.9 A

16.9 A

METAL-OXIDE SEMICONDUCTOR

3

ENHANCEMENT MODE

150 Cel

260

N-CHANNEL

5.2 W

FET General Purpose Power

YES

30

STK822 by STMicroelectronics

STK822

STMicroelectronics

STK822 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max pulsed drain current of 152 A, a breakdown voltage of 25 V, and operates at up to 150 °C. Ideal for compact power management in modern electronics.

ULTRA-LOW RESISTANCE

500 mJ

SOURCE

SINGLE WITH BUILT-IN DIODE

25 V

38 A

38 A

.003 ohm

METAL-OXIDE SEMICONDUCTOR

R-XDSO-N4

1

4

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

5.2 W

152 A

Not Qualified

FET General Purpose Power

YES

NO LEAD

DUAL

NOT SPECIFIED

SWITCHING

SILICON

STK38N3LLH5 by STMicroelectronics

STK38N3LLH5

STMicroelectronics

STK38N3LLH5 by STMicroelectronics is a power FET with N-channel configuration and built-in diode. It is used for switching applications, has a min DS breakdown voltage of 30V, and can handle a max drain current of 38A.

SOURCE

SINGLE WITH BUILT-IN DIODE

30 V

38 A

38 A

.0026 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-N10

e3

1

10

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

5.2 W

152 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

STK22N6F3 by STMicroelectronics

STK22N6F3

STMicroelectronics

STK22N6F3 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, 88A IDM, and 0.006 ohm RDS. It's used for SWITCHING applications in ENHANCEMENT MODE with 800mJ EAS rating.

ULTRA-LOW RESISTANCE

800 mJ

SOURCE

SINGLE WITH BUILT-IN DIODE

60 V

22 A

22 A

.006 ohm

METAL-OXIDE SEMICONDUCTOR

R-XDSO-N4

e3

1

4

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

5.2 W

88 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

STK20N75F3 by STMicroelectronics

STK20N75F3

STMicroelectronics

STK20N75F3 from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 75V breakdown voltage and 80A max pulsed drain current. Its compact no-lead design ensures efficient thermal management with a max temp of 150 °C. This MOSFET offers low on-resistance at just 0.007Ω, making it suitable for high-performance power circuits.

600 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

75 V

20 A

20 A

.007 ohm

METAL-OXIDE SEMICONDUCTOR

R-XDSO-N4

e3

1

1

4

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

5.2 W

80 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

SI7434DP-T1-E3 by Vishay Intertechnology

SI7434DP-T1-E3

Vishay Intertechnology

Vishay Intertechnology's SI7434DP-T1-E3 is an N-CHANNEL FET for SWITCHING applications. Features include 250V DS Breakdown Voltage, 40A IDM, and 0.155 ohm RDS(on). With a small outline package style and operating temperature up to 150°C, it is ideal for high-power switching circuits.

8.4 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

250 V

2.3 A

2.3 A

.155 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-C8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

5.2 W

40 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

C BEND

DUAL

30

SWITCHING

SILICON

STK850 by STMicroelectronics

STK850

STMicroelectronics

STK850 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max pulsed drain current of 120 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact power management in modern electronics.

1400 mJ

SOURCE

SINGLE WITH BUILT-IN DIODE

30 V

30 A

30 A

.0035 ohm

METAL-OXIDE SEMICONDUCTOR

R-XDSO-N4

e3

1

1

4

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

5.2 W

120 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

STK800 by STMicroelectronics

STK800

STMicroelectronics

STK800 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max pulsed drain current of 80 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact power management in electronics.

1000 mJ

SOURCE

SINGLE WITH BUILT-IN DIODE

30 V

20 A

20 A

.0098 ohm

METAL-OXIDE SEMICONDUCTOR

R-XDSO-N4

e3

1

1

4

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

5.2 W

80 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON